NL179645C - Werkwijze voor het hechten van een orgaan van koper op een substraat van een keramisch materiaal en halfgeleiderelementen hiermee vervaardigd. - Google Patents
Werkwijze voor het hechten van een orgaan van koper op een substraat van een keramisch materiaal en halfgeleiderelementen hiermee vervaardigd.Info
- Publication number
- NL179645C NL179645C NLAANVRAGE7608549,A NL7608549A NL179645C NL 179645 C NL179645 C NL 179645C NL 7608549 A NL7608549 A NL 7608549A NL 179645 C NL179645 C NL 179645C
- Authority
- NL
- Netherlands
- Prior art keywords
- organ
- attaching
- copper
- substrate
- ceramic material
- Prior art date
Links
- 229910010293 ceramic material Inorganic materials 0.000 title 1
- 210000000056 organ Anatomy 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/14—Soldering, e.g. brazing, or unsoldering specially adapted for soldering seams
- B23K1/18—Soldering, e.g. brazing, or unsoldering specially adapted for soldering seams circumferential seams, e.g. of shells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/06—Oxidic interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/54—Oxidising the surface before joining
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/56—Using constraining layers before or during sintering
- C04B2237/567—Using constraining layers before or during sintering made of metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/76—Forming laminates or joined articles comprising at least one member in the form other than a sheet or disc, e.g. two tubes or a tube and a sheet or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01016—Sulfur [S]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01018—Argon [Ar]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01043—Technetium [Tc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/202—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using self-supporting metal foil pattern
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/600,300 US3994430A (en) | 1975-07-30 | 1975-07-30 | Direct bonding of metals to ceramics and metals |
US05/696,899 US4129243A (en) | 1975-07-30 | 1976-06-17 | Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7608549A NL7608549A (nl) | 1977-02-01 |
NL179645B NL179645B (nl) | 1986-05-16 |
NL179645C true NL179645C (nl) | 1986-10-16 |
Family
ID=27083564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7608549,A NL179645C (nl) | 1975-07-30 | 1976-07-30 | Werkwijze voor het hechten van een orgaan van koper op een substraat van een keramisch materiaal en halfgeleiderelementen hiermee vervaardigd. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4129243A (xx) |
JP (2) | JPS604154B2 (xx) |
DE (1) | DE2633869C2 (xx) |
FR (1) | FR2319600A1 (xx) |
GB (1) | GB1559590A (xx) |
MX (1) | MX3498E (xx) |
NL (1) | NL179645C (xx) |
SE (1) | SE426580B (xx) |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3036128C2 (de) * | 1980-09-25 | 1983-08-18 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum direkten Verbinden von Kupferfolien mit Oxidkeramiksubstraten |
FR2493043B1 (fr) * | 1980-10-23 | 1987-01-16 | Silicium Semiconducteur Ssc | Montage sans alliage d'un composant semi-conducteur de puissance en boitier presse |
JPS5792585A (en) * | 1980-11-27 | 1982-06-09 | Ngk Spark Plug Co | Method of bonding ceramics and metal plate |
JPS57100737A (en) * | 1980-12-16 | 1982-06-23 | Toshiba Corp | Semiconductor device |
US4408218A (en) * | 1981-03-27 | 1983-10-04 | Amp Incorporated | Ceramic chip carrier with lead frame having removable rim |
US4362902A (en) * | 1981-03-27 | 1982-12-07 | Amp Incorporated | Ceramic chip carrier |
DE3127458A1 (de) * | 1981-07-11 | 1983-02-03 | Brown, Boveri & Cie Ag, 6800 Mannheim | Elektrische verbindungslasche fuer halbleiterbauelemente |
EP0072644B1 (en) * | 1981-08-14 | 1986-03-26 | AMP INCORPORATED (a New Jersey corporation) | Semiconductor chip carrier |
DE3147789A1 (de) * | 1981-12-03 | 1983-06-09 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungsmodul und verfahren zu seiner herstellung |
DE3147790A1 (de) * | 1981-12-03 | 1983-06-09 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungsmodul und verfahren zu seiner herstellung |
DE3204167A1 (de) * | 1982-02-06 | 1983-08-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten |
JPS58137285A (ja) * | 1982-02-10 | 1983-08-15 | 株式会社日立製作所 | 金属板付セラミック基板の製造法 |
US4500029A (en) * | 1982-06-11 | 1985-02-19 | General Electric Company | Electrical assembly including a conductor pattern bonded to a non-metallic substrate and method of fabricating such assembly |
EP0097944B1 (en) * | 1982-06-29 | 1988-06-01 | Kabushiki Kaisha Toshiba | Method for directly bonding ceramic and metal members and laminated body of the same |
JPS593077A (ja) * | 1982-06-29 | 1984-01-09 | 株式会社東芝 | セラミツク部材と金属との接合方法 |
JPS59190279A (ja) * | 1983-04-13 | 1984-10-29 | 株式会社東芝 | セラミツクス構造体及びその製造方法 |
DE3324661A1 (de) * | 1983-07-08 | 1985-01-17 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum direkten verbinden von metall mit keramik |
US4769744A (en) * | 1983-08-04 | 1988-09-06 | General Electric Company | Semiconductor chip packages having solder layers of enhanced durability |
FR2556132B1 (fr) * | 1983-12-01 | 1987-05-07 | Ceraver | Procede d'assemblage d'un boitier d'un composant semi-conducteur |
JPS60131873A (ja) * | 1983-12-15 | 1985-07-13 | 株式会社東芝 | セラミツクス−金属直接接合体およびその製造方法 |
JPH0785495B2 (ja) * | 1985-03-18 | 1995-09-13 | ティーディーケイ株式会社 | 酸化物セラミツク上の銅電極形成法 |
JPS61220836A (ja) * | 1985-03-28 | 1986-10-01 | 株式会社東芝 | セラミツクス回路基板 |
JPH062386B2 (ja) * | 1985-03-29 | 1994-01-12 | 株式会社東芝 | セラミックス回路基板の製造方法 |
JPS61227035A (ja) * | 1985-03-30 | 1986-10-09 | 株式会社東芝 | セラミツクス回路基板 |
US4905075A (en) * | 1986-05-05 | 1990-02-27 | General Electric Company | Hermetic semiconductor enclosure |
DE3633907A1 (de) * | 1986-08-02 | 1988-02-04 | Altan Akyuerek | Verfahren zum haftfesten verbinden eines kupferkoerpers mit einem substrat |
DE3626232A1 (de) * | 1986-08-02 | 1988-03-10 | Akyuerek Susanne | Verfahren zur herstellung einer leiterplatte |
JPS63166774A (ja) * | 1986-12-27 | 1988-07-09 | 同和鉱業株式会社 | 銅板とアルミナ基板との接合体の製造方法 |
DE3701108A1 (de) * | 1987-01-16 | 1988-07-28 | Akyuerek Altan | Verfahren zum verbinden zweier metallteile |
DE3724995A1 (de) * | 1987-02-26 | 1988-09-08 | Radex Heraklith | Verfahren zur herstellung eines verbundkoerpers und verbundkoerper selbst |
JP2566142B2 (ja) * | 1987-04-14 | 1996-12-25 | 昭和電工株式会社 | 回路形成方法 |
US4788765A (en) * | 1987-11-13 | 1988-12-06 | Gentron Corporation | Method of making circuit assembly with hardened direct bond lead frame |
JPH01241193A (ja) * | 1988-03-23 | 1989-09-26 | Toshiba Corp | セラミックス基板 |
US5070602A (en) * | 1988-04-12 | 1991-12-10 | Lance R. Kaufman | Method of making a circuit assembly |
US4902854A (en) * | 1988-04-12 | 1990-02-20 | Kaufman Lance R | Hermetic direct bond circuit assembly |
US4924292A (en) * | 1988-04-12 | 1990-05-08 | Kaufman Lance R | Direct bond circuit assembly with crimped lead frame |
US4879633A (en) * | 1988-04-12 | 1989-11-07 | Kaufman Lance R | Direct bond circuit assembly with ground plane |
US4831723A (en) * | 1988-04-12 | 1989-05-23 | Kaufman Lance R | Direct bond circuit assembly with crimped lead frame |
US5032691A (en) * | 1988-04-12 | 1991-07-16 | Kaufman Lance R | Electric circuit assembly with voltage isolation |
US4990720A (en) * | 1988-04-12 | 1991-02-05 | Kaufman Lance R | Circuit assembly and method with direct bonded terminal pin |
US4860164A (en) * | 1988-09-01 | 1989-08-22 | Kaufman Lance R | Heat sink apparatus with electrically insulative intermediate conduit portion for coolant flow |
JPH0272695A (ja) * | 1988-09-07 | 1990-03-12 | Toshiba Lighting & Technol Corp | 混成集積回路 |
GB2225484A (en) * | 1988-11-25 | 1990-05-30 | Westinghouse Brake & Signal | Semiconductor device assembly |
DE3844264A1 (de) * | 1988-12-30 | 1990-07-05 | Akyuerek Altan | Traegerkoerper fuer elektronische schaltungsstrukturen und verfahren zur herstellung eines solchen traegerkoerpers |
US5100740A (en) * | 1989-09-25 | 1992-03-31 | General Electric Company | Direct bonded symmetric-metallic-laminate/substrate structures |
US5653379A (en) * | 1989-12-18 | 1997-08-05 | Texas Instruments Incorporated | Clad metal substrate |
US5241216A (en) * | 1989-12-21 | 1993-08-31 | General Electric Company | Ceramic-to-conducting-lead hermetic seal |
US4996116A (en) * | 1989-12-21 | 1991-02-26 | General Electric Company | Enhanced direct bond structure |
US5273203A (en) * | 1989-12-21 | 1993-12-28 | General Electric Company | Ceramic-to-conducting-lead hermetic seal |
US5164359A (en) * | 1990-04-20 | 1992-11-17 | Eaton Corporation | Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate |
JP3011433B2 (ja) * | 1990-05-25 | 2000-02-21 | 株式会社東芝 | セラミックス回路基板の製造方法 |
US5139972A (en) * | 1991-02-28 | 1992-08-18 | General Electric Company | Batch assembly of high density hermetic packages for power semiconductor chips |
US5573692A (en) * | 1991-03-11 | 1996-11-12 | Philip Morris Incorporated | Platinum heater for electrical smoking article having ohmic contact |
US5562716A (en) * | 1992-10-20 | 1996-10-08 | Cochlear Limited | Package and method of construction |
US5402006A (en) * | 1992-11-10 | 1995-03-28 | Texas Instruments Incorporated | Semiconductor device with enhanced adhesion between heat spreader and leads and plastic mold compound |
DE4319848C2 (de) * | 1993-06-03 | 1995-12-21 | Schulz Harder Juergen | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
EP0650193A3 (en) * | 1993-10-25 | 1996-07-31 | Toshiba Kk | Semiconductor device and method for its production. |
US5777259A (en) * | 1994-01-14 | 1998-07-07 | Brush Wellman Inc. | Heat exchanger assembly and method for making the same |
EP0667640A3 (en) * | 1994-01-14 | 1997-05-14 | Brush Wellman | Multi-layer laminate product and its manufacture. |
JP2918191B2 (ja) * | 1994-04-11 | 1999-07-12 | 同和鉱業株式会社 | 金属−セラミックス複合部材の製造方法 |
US5965193A (en) * | 1994-04-11 | 1999-10-12 | Dowa Mining Co., Ltd. | Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material |
US6022426A (en) * | 1995-05-31 | 2000-02-08 | Brush Wellman Inc. | Multilayer laminate process |
JP3849381B2 (ja) * | 1999-12-20 | 2006-11-22 | 株式会社日立製作所 | 絶縁回路基板の製造方法 |
DE10148550B4 (de) * | 2001-10-01 | 2007-03-29 | Electrovac Ag | Verfahren zum Herstellen von Metall-Keramik-Verbundmaterialien, insbesondere Metall-Keramik-Substraten |
US7159757B2 (en) * | 2002-09-26 | 2007-01-09 | Dowa Mining Co., Ltd. | Metal/ceramic bonding article and method for producing same |
JP3935037B2 (ja) | 2002-09-30 | 2007-06-20 | Dowaホールディングス株式会社 | アルミニウム−セラミックス接合基板の製造方法 |
JP4500065B2 (ja) * | 2004-02-19 | 2010-07-14 | Dowaホールディングス株式会社 | アルミナ部材と銅電極との接合方法およびアルミナ部材と銅電極との接合体 |
US20070231590A1 (en) * | 2006-03-31 | 2007-10-04 | Stellar Industries Corp. | Method of Bonding Metals to Ceramics |
EP2142490A1 (de) * | 2007-04-24 | 2010-01-13 | CeramTec AG | Verfahren zur herstellung eines metallisierten bauteils, bauteil sowie einen träger zur auflage des bauteils bei der metallisierung |
DE102010007919B4 (de) | 2010-02-12 | 2022-03-03 | Rogers Germany Gmbh | Verfahren zum Herstellen von Metall-Keramik-Substraten sowie nach diesem Verfahren hergestelltes Metall-Keramik-Substrat |
DE102014104510B4 (de) * | 2014-03-31 | 2019-02-07 | Gottfried Wilhelm Leibniz Universität Hannover | Verfahren zum Fügen und Einrichtung zum Fügen einer Anordnung unter Verwendung des Verfahrens |
JP2015224151A (ja) * | 2014-05-27 | 2015-12-14 | Ngkエレクトロデバイス株式会社 | Cu/セラミック基板 |
JP6645281B2 (ja) * | 2016-03-14 | 2020-02-14 | 三菱マテリアル株式会社 | セラミックス/アルミニウム接合体の製造方法、及び、パワーモジュール用基板の製造方法 |
CN107819066B (zh) * | 2017-10-26 | 2018-10-16 | 成都万士达瓷业有限公司 | 一种低氧铜烧结dbc半导体热电基片的生产方法 |
DE102018101198A1 (de) | 2018-01-19 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines gehäusedeckels für ein laserbauelement und gehäusedeckel für ein laserbauelement sowie laserbauelement |
TWI654914B (zh) * | 2018-07-31 | 2019-03-21 | 國家中山科學研究院 | Method for improving adhesion of ceramic carrier board and thick film circuit |
JP6602450B2 (ja) * | 2018-12-11 | 2019-11-06 | Ngkエレクトロデバイス株式会社 | Cu/セラミック基板 |
CN117457504B (zh) * | 2023-12-22 | 2024-03-08 | 成都万士达瓷业有限公司 | 一种陶瓷封装表面覆铜的生产方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA545179A (en) * | 1957-08-20 | N. Sayers Frank | Bonding of metals to ceramics | |
GB697070A (en) * | 1951-01-11 | 1953-09-16 | Erie Resistor Corp | Improvements in electric components comprising resistances and capacitances |
GB761045A (en) * | 1952-08-29 | 1956-11-07 | Lodge Plugs Ltd | Improvements in or relating to the bonding of ceramics with copper |
FR1100497A (fr) * | 1953-05-12 | 1955-09-20 | Philips Nv | Procédé d'assemblage d'objets céramiques entre eux ou à des objets métalliques |
US2857663A (en) * | 1954-02-09 | 1958-10-28 | Gen Electric | Metallic bond |
US3224088A (en) * | 1961-11-15 | 1965-12-21 | Inland Steel Co | Process for producing multi-layer metallic material |
US3550254A (en) * | 1968-04-05 | 1970-12-29 | North American Rockwell | Method and means for solid state joinder |
DE2014289A1 (de) * | 1970-03-25 | 1971-10-14 | Semikron Gleichrichterbau | Scheibenförmiges Halbleiterbauele ment und Verfahren zu seiner Herstellung |
US3751800A (en) * | 1970-08-04 | 1973-08-14 | Gen Motors Corp | Method of fabricating a semiconductor enclosure |
US3981429A (en) * | 1970-10-16 | 1976-09-21 | Rohr Industries, Inc. | Method for plated foil liquid interface diffusion bonding of titanium |
US3736650A (en) * | 1971-06-01 | 1973-06-05 | Varian Associates | Method for making metal-to-ceramic seals |
US3744120A (en) * | 1972-04-20 | 1973-07-10 | Gen Electric | Direct bonding of metals with a metal-gas eutectic |
US3766634A (en) * | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
US3994430A (en) * | 1975-07-30 | 1976-11-30 | General Electric Company | Direct bonding of metals to ceramics and metals |
-
1976
- 1976-06-17 US US05/696,899 patent/US4129243A/en not_active Expired - Lifetime
- 1976-07-28 DE DE2633869A patent/DE2633869C2/de not_active Expired
- 1976-07-28 SE SE7608523A patent/SE426580B/xx not_active IP Right Cessation
- 1976-07-29 JP JP51090757A patent/JPS604154B2/ja not_active Expired
- 1976-07-30 GB GB31858/76A patent/GB1559590A/en not_active Expired
- 1976-07-30 NL NLAANVRAGE7608549,A patent/NL179645C/xx not_active IP Right Cessation
- 1976-07-30 MX MX762113U patent/MX3498E/es unknown
- 1976-07-30 FR FR7623315A patent/FR2319600A1/fr active Granted
-
1989
- 1989-04-18 JP JP1096541A patent/JPH01308885A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
SE426580B (sv) | 1983-01-31 |
NL179645B (nl) | 1986-05-16 |
NL7608549A (nl) | 1977-02-01 |
FR2319600A1 (fr) | 1977-02-25 |
JPH01308885A (ja) | 1989-12-13 |
JPH0427195B2 (xx) | 1992-05-11 |
JPS604154B2 (ja) | 1985-02-01 |
DE2633869A1 (de) | 1977-02-17 |
GB1559590A (en) | 1980-01-23 |
DE2633869C2 (de) | 1985-09-05 |
FR2319600B1 (xx) | 1982-08-20 |
MX3498E (es) | 1981-01-05 |
JPS5237914A (en) | 1977-03-24 |
SE7608523L (sv) | 1977-01-31 |
US4129243A (en) | 1978-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL179645C (nl) | Werkwijze voor het hechten van een orgaan van koper op een substraat van een keramisch materiaal en halfgeleiderelementen hiermee vervaardigd. | |
NL7608448A (nl) | Hechtend materiaal en werkwijze voor het vervaardigen daarvan. | |
BE849592A (nl) | Werkwijze voor het inkapselen van materialen alsmede de volgens deze werkwijze verkregen preparaten | |
NL7613818A (nl) | Werkwijze voor het vervaardigen van poreuze tabletten. | |
NL7612129A (nl) | Elektroluminescerende beeldplaat en werkwijze voor het vervaardigen hiervan. | |
NL7612128A (nl) | Elektroluminescerende beeldplaat en werkwijze voor het vervaardigen hiervan. | |
NL7704937A (nl) | Werkwijze voor het inkapselen van micro-elektro- nische elementen. | |
NL7601384A (nl) | Inrichting en werkwijze voor het opvangen van materiaal. | |
NL7613440A (nl) | Werkwijze en inrichting voor het vervaardigen van een halfgeleiderinrichting. | |
NL7608923A (nl) | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. | |
NL7609034A (nl) | Halfgeleider en werkwijze voor de vervaardiging daarvan. | |
NL7609186A (nl) | Werkwijze voor het vervaardigen van uit meer- dere lagen bestaande microbedradingen. | |
NL7606639A (nl) | Geintegreerde logische schakeling en werkwijze voor het vervaardigen van een dergelijke schake- ling. | |
NL7613673A (nl) | Werkwijze voor het bereiden van een farmaceu- tische samenstelling en zo gevormde farmaceutische samenstelling. | |
NL7604542A (nl) | Elektrisch geleidend substraat voor elektrisch gevoelig registratiemateriaal. | |
NL7609132A (nl) | Werkwijze voor het vervaardigen van uit een aantal lagen bestaande magnetogram-dragers. | |
NL7612195A (nl) | Werkwijze voor het oligomeriseren van (alpha)-alkenen. | |
NL7604665A (nl) | Werkwijze voor het vervaardigen van zeefmate- riaal. | |
BE844889A (nl) | Ritssluitingelement en inrichting en werkwijze voor het vervaardigen daarvan | |
NL185044C (nl) | Halfgeleider-component en werkwijze voor het vervaardigen daarvan. | |
NL7514232A (nl) | Inrichting voor het mechanisch ontwateren van baanvormig materiaal. | |
NL7611287A (nl) | Booreiland en werkwijze voor het monteren daarvan. | |
BE844056A (nl) | Werkwijze voor het oxychloreren van etheen | |
NL7607126A (nl) | Werkwijze voor het vervaardigen van meervoudig getinte tabletten. | |
NL7611523A (nl) | Vervaardigen van halfgeleiderinrichting. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |
Free format text: 960730 |