DE2626851C3 - Verfahren zur Herstellung von Masken für die Röntgenlithographie - Google Patents
Verfahren zur Herstellung von Masken für die RöntgenlithographieInfo
- Publication number
- DE2626851C3 DE2626851C3 DE19762626851 DE2626851A DE2626851C3 DE 2626851 C3 DE2626851 C3 DE 2626851C3 DE 19762626851 DE19762626851 DE 19762626851 DE 2626851 A DE2626851 A DE 2626851A DE 2626851 C3 DE2626851 C3 DE 2626851C3
- Authority
- DE
- Germany
- Prior art keywords
- mask
- mask structure
- layer
- base
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000001015 X-ray lithography Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims description 51
- 238000005530 etching Methods 0.000 claims description 26
- 238000007740 vapor deposition Methods 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 21
- 239000012790 adhesive layer Substances 0.000 claims description 17
- 239000004033 plastic Substances 0.000 claims description 16
- 229920003023 plastic Polymers 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 7
- 238000006116 polymerization reaction Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 4
- 229920006255 plastic film Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004922 lacquer Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 2
- 229960002218 sodium chlorite Drugs 0.000 description 2
- 239000006188 syrup Substances 0.000 description 2
- 235000020357 syrup Nutrition 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- ZOPQVUGKTLTCMT-UHFFFAOYSA-N nickel;sulfane Chemical compound S.[Ni] ZOPQVUGKTLTCMT-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762626851 DE2626851C3 (de) | 1976-06-15 | 1976-06-15 | Verfahren zur Herstellung von Masken für die Röntgenlithographie |
| GB1836377A GB1544787A (en) | 1976-06-15 | 1977-05-02 | Masks for x-ray lithography |
| FR7717507A FR2355314A1 (fr) | 1976-06-15 | 1977-06-08 | Procede pour realiser des masques pour la lithographie aux rayons x |
| NL7706552A NL186201C (nl) | 1976-06-15 | 1977-06-14 | Werkwijze voor het vervaardigen van maskers voor roentgenlithografie. |
| IT2465877A IT1083777B (it) | 1976-06-15 | 1977-06-14 | Procedimento per fabbricare maschere per la litorgrafia a raggi rontgen |
| BE178453A BE855701A (fr) | 1976-06-15 | 1977-06-15 | Procede pour realiser des masques pour la lithographie aux rayons x |
| JP7095277A JPS52153673A (en) | 1976-06-15 | 1977-06-15 | Method of manufacturing mask for xxray lithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762626851 DE2626851C3 (de) | 1976-06-15 | 1976-06-15 | Verfahren zur Herstellung von Masken für die Röntgenlithographie |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2626851A1 DE2626851A1 (de) | 1977-12-22 |
| DE2626851B2 DE2626851B2 (de) | 1981-07-02 |
| DE2626851C3 true DE2626851C3 (de) | 1982-03-18 |
Family
ID=5980611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762626851 Expired DE2626851C3 (de) | 1976-06-15 | 1976-06-15 | Verfahren zur Herstellung von Masken für die Röntgenlithographie |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS52153673A (enExample) |
| BE (1) | BE855701A (enExample) |
| DE (1) | DE2626851C3 (enExample) |
| FR (1) | FR2355314A1 (enExample) |
| GB (1) | GB1544787A (enExample) |
| IT (1) | IT1083777B (enExample) |
| NL (1) | NL186201C (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4171489A (en) * | 1978-09-13 | 1979-10-16 | Bell Telephone Laboratories, Incorporated | Radiation mask structure |
| GB2089524B (en) * | 1980-12-17 | 1984-12-05 | Westinghouse Electric Corp | High resolution lithographic process |
| GB2121980B (en) * | 1982-06-10 | 1986-02-05 | Standard Telephones Cables Ltd | X ray masks |
| DE3435178A1 (de) * | 1983-09-26 | 1985-04-04 | Canon K.K., Tokio/Tokyo | Gegenstand mit maskenstruktur fuer die lithografie |
| DE3338717A1 (de) * | 1983-10-25 | 1985-05-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie |
| JPS6169133A (ja) * | 1985-05-07 | 1986-04-09 | Chiyou Lsi Gijutsu Kenkyu Kumiai | 軟ｘ線露光方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1948141A1 (de) * | 1968-09-23 | 1970-04-23 | Polaroid Corp | Optisches Element mit Antireflexueberzug |
-
1976
- 1976-06-15 DE DE19762626851 patent/DE2626851C3/de not_active Expired
-
1977
- 1977-05-02 GB GB1836377A patent/GB1544787A/en not_active Expired
- 1977-06-08 FR FR7717507A patent/FR2355314A1/fr active Granted
- 1977-06-14 IT IT2465877A patent/IT1083777B/it active
- 1977-06-14 NL NL7706552A patent/NL186201C/xx not_active IP Right Cessation
- 1977-06-15 BE BE178453A patent/BE855701A/xx not_active IP Right Cessation
- 1977-06-15 JP JP7095277A patent/JPS52153673A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2626851A1 (de) | 1977-12-22 |
| FR2355314A1 (fr) | 1978-01-13 |
| NL7706552A (nl) | 1977-12-19 |
| BE855701A (fr) | 1977-10-03 |
| JPS52153673A (en) | 1977-12-20 |
| NL186201C (nl) | 1990-10-01 |
| GB1544787A (en) | 1979-04-25 |
| DE2626851B2 (de) | 1981-07-02 |
| IT1083777B (it) | 1985-05-25 |
| FR2355314B1 (enExample) | 1981-08-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |