DE2624313A1 - Verfahren zur ausfuehrung von warmpressverbindungen von leiterstrukturen auf einem halbleiter- schaltungsbaustein - Google Patents

Verfahren zur ausfuehrung von warmpressverbindungen von leiterstrukturen auf einem halbleiter- schaltungsbaustein

Info

Publication number
DE2624313A1
DE2624313A1 DE19762624313 DE2624313A DE2624313A1 DE 2624313 A1 DE2624313 A1 DE 2624313A1 DE 19762624313 DE19762624313 DE 19762624313 DE 2624313 A DE2624313 A DE 2624313A DE 2624313 A1 DE2624313 A1 DE 2624313A1
Authority
DE
Germany
Prior art keywords
gold
copper
layer
semiconductor circuit
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19762624313
Other languages
German (de)
English (en)
Inventor
Carmen D Burns
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of DE2624313A1 publication Critical patent/DE2624313A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/79—Apparatus for Tape Automated Bonding [TAB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
DE19762624313 1975-06-02 1976-05-31 Verfahren zur ausfuehrung von warmpressverbindungen von leiterstrukturen auf einem halbleiter- schaltungsbaustein Withdrawn DE2624313A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/582,620 US4000842A (en) 1975-06-02 1975-06-02 Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices

Publications (1)

Publication Number Publication Date
DE2624313A1 true DE2624313A1 (de) 1976-12-23

Family

ID=24329846

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762624313 Withdrawn DE2624313A1 (de) 1975-06-02 1976-05-31 Verfahren zur ausfuehrung von warmpressverbindungen von leiterstrukturen auf einem halbleiter- schaltungsbaustein

Country Status (7)

Country Link
US (1) US4000842A (enExample)
JP (1) JPS5936823B2 (enExample)
BR (1) BR7603301A (enExample)
CA (1) CA1050668A (enExample)
DE (1) DE2624313A1 (enExample)
FR (1) FR2313771A1 (enExample)
GB (1) GB1530216A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0152189A3 (en) * 1984-01-25 1987-12-09 Luc Technologies Limited Bonding electrical conductors and bonded products

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US4188438A (en) * 1975-06-02 1980-02-12 National Semiconductor Corporation Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices
US4115799A (en) * 1977-01-26 1978-09-19 Westinghouse Electric Corp. Thin film copper transition between aluminum and indium copper films
JPS53123074A (en) * 1977-04-01 1978-10-27 Nec Corp Semiconductor device
FR2402304A1 (fr) * 1977-08-31 1979-03-30 Int Computers Ltd Procede de connexion electrique d'une pastille de circuit integre
US4609936A (en) * 1979-09-19 1986-09-02 Motorola, Inc. Semiconductor chip with direct-bonded external leadframe
US4330790A (en) * 1980-03-24 1982-05-18 National Semiconductor Corporation Tape operated semiconductor device packaging
US4413404A (en) * 1980-04-14 1983-11-08 National Semiconductor Corporation Process for manufacturing a tear strip planarization ring for gang bonded semiconductor device interconnect tape
US4331740A (en) * 1980-04-14 1982-05-25 National Semiconductor Corporation Gang bonding interconnect tape process and structure for semiconductor device automatic assembly
JPS57152147A (en) * 1981-03-16 1982-09-20 Matsushita Electric Ind Co Ltd Formation of metal projection on metal lead
US4607779A (en) * 1983-08-11 1986-08-26 National Semiconductor Corporation Non-impact thermocompression gang bonding method
DE3343251A1 (de) * 1983-11-30 1985-06-05 W.C. Heraeus Gmbh, 6450 Hanau Systemtraeger fuer elektrische bauelemente
US4560826A (en) * 1983-12-29 1985-12-24 Amp Incorporated Hermetically sealed chip carrier
IT1213261B (it) * 1984-12-20 1989-12-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.
WO1986006878A1 (fr) * 1985-05-10 1986-11-20 Asahi Kasei Kogyo Kabushiki Kaisha Element convetisseur magneto-electrique
US4707418A (en) * 1985-06-26 1987-11-17 National Semiconductor Corporation Nickel plated copper tape
US5134460A (en) * 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
US4739917A (en) * 1987-01-12 1988-04-26 Ford Motor Company Dual solder process for connecting electrically conducting terminals of electrical components to printed circuit conductors
EP0854506A3 (en) * 1987-03-04 1999-03-31 Canon Kabushiki Kaisha Electrically connecting member and electric circuit member
US5046657A (en) * 1988-02-09 1991-09-10 National Semiconductor Corporation Tape automated bonding of bumped tape on bumped die
US5197892A (en) * 1988-05-31 1993-03-30 Canon Kabushiki Kaisha Electric circuit device having an electric connecting member and electric circuit components
US5130275A (en) * 1990-07-02 1992-07-14 Digital Equipment Corp. Post fabrication processing of semiconductor chips
JPH0484449A (ja) * 1990-07-27 1992-03-17 Shinko Electric Ind Co Ltd Ｔａｂテープ
US5508561A (en) * 1993-11-15 1996-04-16 Nec Corporation Apparatus for forming a double-bump structure used for flip-chip mounting
US5591649A (en) * 1995-01-19 1997-01-07 Texas Instruments Incorporated Process of removing a tape automated bonded semiconductor from bonded leads
US5619068A (en) * 1995-04-28 1997-04-08 Lucent Technologies Inc. Externally bondable overmolded package arrangements
US5597470A (en) * 1995-06-18 1997-01-28 Tessera, Inc. Method for making a flexible lead for a microelectronic device
US6020640A (en) * 1996-12-19 2000-02-01 Texas Instruments Incorporated Thick plated interconnect and associated auxillary interconnect
US6060341A (en) * 1998-01-12 2000-05-09 International Business Machines Corporation Method of making an electronic package
DE19916177B4 (de) * 1999-04-10 2006-01-26 Sokymat Gmbh Verfahren zum Kontaktieren des Halbleiterchips und Halbleiterchip mit drahtförmigen Anschlußstücken
US6940178B2 (en) * 2001-02-27 2005-09-06 Chippac, Inc. Self-coplanarity bumping shape for flip chip
US6768210B2 (en) * 2001-11-01 2004-07-27 Texas Instruments Incorporated Bumpless wafer scale device and board assembly
EP1389802A1 (de) * 2002-08-16 2004-02-18 ABB Schweiz AG Schutzschicht für Leistungshalbleitermodul-Kontaktplättchen
US7176580B1 (en) * 2003-10-24 2007-02-13 Joseph Fjelstad Structures and methods for wire bonding over active, brittle and low K dielectric areas of an IC chip
US7910471B2 (en) * 2004-02-02 2011-03-22 Texas Instruments Incorporated Bumpless wafer scale device and board assembly
US20050230262A1 (en) * 2004-04-20 2005-10-20 Semitool, Inc. Electrochemical methods for the formation of protective features on metallized features
DE102005028951B4 (de) * 2005-06-22 2018-05-30 Infineon Technologies Ag Anordnung zur elektrischen Verbindung einer Halbleiter-Schaltungsanordnung mit einer äusseren Kontakteinrichtung
US7439100B2 (en) * 2005-08-18 2008-10-21 Semiconductor Components Industries, L.L.C. Encapsulated chip scale package having flip-chip on lead frame structure and method
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
US20100133671A1 (en) * 2008-12-02 2010-06-03 Chung Hsing Tzu Flip-chip package structure and the die attach method thereof
TW201114114A (en) * 2009-10-14 2011-04-16 Hon Hai Prec Ind Co Ltd Electrical connector contact and electroplating method thereof
JP6001956B2 (ja) * 2012-08-10 2016-10-05 株式会社東芝 半導体装置
US20200176174A1 (en) 2018-11-29 2020-06-04 Prippell Technologies, Llc Fluid cooled magnetic element
US11538778B2 (en) * 2020-12-18 2022-12-27 Advanced Semiconductor Engineering, Inc. Semiconductor package including alignment material and method for manufacturing semiconductor package

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US3396454A (en) * 1964-01-23 1968-08-13 Allis Chalmers Mfg Co Method of forming ohmic contacts in semiconductor devices
US3787958A (en) * 1965-08-18 1974-01-29 Atomic Energy Commission Thermo-electric modular structure and method of making same
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US3713575A (en) * 1971-06-29 1973-01-30 Western Electric Co Bonding apparatus having means for continuous monitoring of the bond
US3760238A (en) * 1972-02-28 1973-09-18 Microsystems Int Ltd Fabrication of beam leads
US3777365A (en) * 1972-03-06 1973-12-11 Honeywell Inf Systems Circuit chips having beam leads attached by film strip process
US3778685A (en) * 1972-03-27 1973-12-11 Nasa Integrated circuit package with lead structure and method of preparing the same
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0152189A3 (en) * 1984-01-25 1987-12-09 Luc Technologies Limited Bonding electrical conductors and bonded products

Also Published As

Publication number Publication date
JPS5936823B2 (ja) 1984-09-06
FR2313771B1 (enExample) 1982-07-02
US4000842A (en) 1977-01-04
FR2313771A1 (fr) 1976-12-31
GB1530216A (en) 1978-10-25
CA1050668A (en) 1979-03-13
JPS527678A (en) 1977-01-20
BR7603301A (pt) 1977-02-15

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