FR2402304A1 - Procede de connexion electrique d'une pastille de circuit integre - Google Patents

Procede de connexion electrique d'une pastille de circuit integre

Info

Publication number
FR2402304A1
FR2402304A1 FR7825219A FR7825219A FR2402304A1 FR 2402304 A1 FR2402304 A1 FR 2402304A1 FR 7825219 A FR7825219 A FR 7825219A FR 7825219 A FR7825219 A FR 7825219A FR 2402304 A1 FR2402304 A1 FR 2402304A1
Authority
FR
France
Prior art keywords
integrated circuit
electrical connection
connection process
circuit pad
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7825219A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Services Ltd
Original Assignee
Fujitsu Services Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Services Ltd filed Critical Fujitsu Services Ltd
Publication of FR2402304A1 publication Critical patent/FR2402304A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822—Beam leads
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0495—5th Group
    • H01L2924/04953—TaN
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Abstract

L'invention concerne un procédé de connexion d'une pastille de circuit intégré, et une pastille connectée selon ce procédé. Une couche d'un métal, d'un composé métallique ou d'un mélange d'un métal et de l'un de ses composés métalliques est formée entre un contact de connexion et un conducteur extérieur. Cette couche peut consister par exemple en une couche. de nitrure de tantale. La connexion est effectuée par application de chaleur et de pression. Application à la fabrication des circuits intégrés.
FR7825219A 1977-08-31 1978-08-31 Procede de connexion electrique d'une pastille de circuit integre Withdrawn FR2402304A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3630977 1977-08-31

Publications (1)

Publication Number Publication Date
FR2402304A1 true FR2402304A1 (fr) 1979-03-30

Family

ID=10386959

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7825219A Withdrawn FR2402304A1 (fr) 1977-08-31 1978-08-31 Procede de connexion electrique d'une pastille de circuit integre

Country Status (2)

Country Link
FR (1) FR2402304A1 (fr)
GB (1) GB2011171A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574298A (en) * 1982-12-27 1986-03-04 Tokyo Shibaura Denki Kabushiki Kaisha III-V Compound semiconductor device
US4816424A (en) * 1983-03-25 1989-03-28 Fujitsu Limited Method of producing semiconductor device having multilayer conductive lines
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
FR2235491A1 (fr) * 1973-06-27 1975-01-24 Hewlett Packard Co
US3906540A (en) * 1973-04-02 1975-09-16 Nat Semiconductor Corp Metal-silicide Schottky diode employing an aluminum connector
FR2313771A1 (fr) * 1975-06-02 1976-12-31 Nat Semiconductor Corp Liaison d'ensemble par thermocompression cuivre-sur-or de conducteurs d'interconnexion avec des dispositifs semi-conducteurs

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
US3906540A (en) * 1973-04-02 1975-09-16 Nat Semiconductor Corp Metal-silicide Schottky diode employing an aluminum connector
FR2235491A1 (fr) * 1973-06-27 1975-01-24 Hewlett Packard Co
FR2313771A1 (fr) * 1975-06-02 1976-12-31 Nat Semiconductor Corp Liaison d'ensemble par thermocompression cuivre-sur-or de conducteurs d'interconnexion avec des dispositifs semi-conducteurs

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574298A (en) * 1982-12-27 1986-03-04 Tokyo Shibaura Denki Kabushiki Kaisha III-V Compound semiconductor device
US4816424A (en) * 1983-03-25 1989-03-28 Fujitsu Limited Method of producing semiconductor device having multilayer conductive lines
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
US5414301A (en) * 1985-03-15 1995-05-09 National Semiconductor Corporation High temperature interconnect system for an integrated circuit

Also Published As

Publication number Publication date
GB2011171A (en) 1979-07-04

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Legal Events

Date Code Title Description
RE Withdrawal of published application