GB2011171A - Improvements in or relating to the making of electrical connections to integrated circuit chips - Google Patents
Improvements in or relating to the making of electrical connections to integrated circuit chipsInfo
- Publication number
- GB2011171A GB2011171A GB7846364A GB7846364A GB2011171A GB 2011171 A GB2011171 A GB 2011171A GB 7846364 A GB7846364 A GB 7846364A GB 7846364 A GB7846364 A GB 7846364A GB 2011171 A GB2011171 A GB 2011171A
- Authority
- GB
- United Kingdom
- Prior art keywords
- integrated circuit
- electrical connections
- relating
- making
- circuit chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4822—Beam leads
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2924/01073—Tantalum [Ta]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Abstract
Electrical connections are made to a semiconductor integrated circuit chip by means of gold beam leads (8) bonded to aluminium pads (5) on the chips (1). In order to improve the reliability of the bond between the beam leads and the pads a layer (7) of tantalum nitride is interposed between the pads (5) and the chips (1). Nitrides of molybdenum, titanium or tungsten may be used instead of tantalum nitride. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3630977 | 1977-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB2011171A true GB2011171A (en) | 1979-07-04 |
Family
ID=10386959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7846364A Withdrawn GB2011171A (en) | 1977-08-31 | 1978-11-28 | Improvements in or relating to the making of electrical connections to integrated circuit chips |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2402304A1 (en) |
GB (1) | GB2011171A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59119867A (en) * | 1982-12-27 | 1984-07-11 | Toshiba Corp | Semiconductor device |
JPS59175763A (en) * | 1983-03-25 | 1984-10-04 | Fujitsu Ltd | Semiconductor device |
US4920071A (en) * | 1985-03-15 | 1990-04-24 | Fairchild Camera And Instrument Corporation | High temperature interconnect system for an integrated circuit |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3701931A (en) * | 1971-05-06 | 1972-10-31 | Ibm | Gold tantalum-nitrogen high conductivity metallurgy |
US3906540A (en) * | 1973-04-02 | 1975-09-16 | Nat Semiconductor Corp | Metal-silicide Schottky diode employing an aluminum connector |
US3877063A (en) * | 1973-06-27 | 1975-04-08 | Hewlett Packard Co | Metallization structure and process for semiconductor devices |
US4000842A (en) * | 1975-06-02 | 1977-01-04 | National Semiconductor Corporation | Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices |
-
1978
- 1978-08-31 FR FR7825219A patent/FR2402304A1/en not_active Withdrawn
- 1978-11-28 GB GB7846364A patent/GB2011171A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2402304A1 (en) | 1979-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |