DE2622828C3 - Verfahren zum Betreiben von BiIdfühlern - Google Patents
Verfahren zum Betreiben von BiIdfühlernInfo
- Publication number
- DE2622828C3 DE2622828C3 DE2622828A DE2622828A DE2622828C3 DE 2622828 C3 DE2622828 C3 DE 2622828C3 DE 2622828 A DE2622828 A DE 2622828A DE 2622828 A DE2622828 A DE 2622828A DE 2622828 C3 DE2622828 C3 DE 2622828C3
- Authority
- DE
- Germany
- Prior art keywords
- charge carriers
- voltage
- electrodes
- storage device
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 13
- 230000010354 integration Effects 0.000 claims description 38
- 239000002800 charge carrier Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 18
- 238000009825 accumulation Methods 0.000 claims description 13
- 239000000969 carrier Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims 2
- 238000012937 correction Methods 0.000 description 11
- 230000007547 defect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004313 glare Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001055 chewing effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/476—Three-phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/579,690 US3953733A (en) | 1975-05-21 | 1975-05-21 | Method of operating imagers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2622828A1 DE2622828A1 (de) | 1976-12-02 |
| DE2622828B2 DE2622828B2 (de) | 1977-12-01 |
| DE2622828C3 true DE2622828C3 (de) | 1978-07-13 |
Family
ID=24317943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2622828A Expired DE2622828C3 (de) | 1975-05-21 | 1976-05-21 | Verfahren zum Betreiben von BiIdfühlern |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3953733A (OSRAM) |
| JP (1) | JPS51142908A (OSRAM) |
| CA (1) | CA1103346A (OSRAM) |
| DE (1) | DE2622828C3 (OSRAM) |
| FR (1) | FR2312147A1 (OSRAM) |
| GB (1) | GB1531920A (OSRAM) |
| IT (1) | IT1060656B (OSRAM) |
| NL (1) | NL188261C (OSRAM) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS538015A (en) * | 1976-07-12 | 1978-01-25 | Toshiba Corp | Pick up system with charge coupled element |
| JPS5451318A (en) * | 1977-09-29 | 1979-04-23 | Sony Corp | Solid pickup unit |
| JPS55163882A (en) * | 1979-06-06 | 1980-12-20 | Nec Corp | System for driving charge transfer element |
| EP0033129B1 (en) * | 1980-01-25 | 1984-06-13 | Kabushiki Kaisha Toshiba | Charge transfer apparatus |
| US4314275A (en) * | 1980-03-24 | 1982-02-02 | Texas Instruments Incorporated | Infrared time delay with integration CTD imager |
| US4377755A (en) * | 1980-07-15 | 1983-03-22 | The United States Of America As Represented By The Secretary Of The Air Force | Signal compressor apparatus |
| JPS586682A (ja) * | 1981-07-06 | 1983-01-14 | Sony Corp | 固体撮像装置 |
| US4598414A (en) * | 1981-12-18 | 1986-07-01 | Honeywell Inc. | Input compression apparatus for charge coupled devices |
| FR2537813B1 (fr) * | 1982-12-10 | 1986-10-10 | Thomson Csf | Procede de reglage des conditions de fonctionnement d'un dispositif photosensible a transfert de charge et dispositif pour sa mise en oeuvre |
| JPH0815322B2 (ja) * | 1986-05-21 | 1996-02-14 | キヤノン株式会社 | 固体撮像装置 |
| US4926247A (en) * | 1986-10-15 | 1990-05-15 | Olympus Optical Co., Ltd. | Color imaging apparatus including a means for electronically non-linearly expanding and compressing dynamic range of an image signal |
| US5008758A (en) * | 1989-05-24 | 1991-04-16 | Massachusetts Institute Of Technology | Suppressing dark current in charge-coupled devices |
| US5055667A (en) * | 1990-06-21 | 1991-10-08 | Loral Fairchild Corporation | Non-linear photosite response in CCD imagers |
| US5295001A (en) * | 1990-11-01 | 1994-03-15 | Canon Kabushiki Kaisha | Image sensing apparatus having tone control function |
| US5276520A (en) * | 1991-06-07 | 1994-01-04 | Eastman Kodak Company | Enhancing exposure latitude of image sensors |
| US5426515A (en) * | 1992-06-01 | 1995-06-20 | Eastman Kodak Company | Lateral overflow gate driver circuit for linear CCD sensor |
| DE19519743A1 (de) * | 1994-05-31 | 1995-12-07 | Dalsa Inc | Photodetektor mit schaltungsgesteuerten CCD-Elektroden |
| DE69517375T2 (de) * | 1994-08-31 | 2001-03-01 | Matsushita Electric Industrial Co., Ltd. | Bildaufnahmevorrichtung mit weitem Dynamikbereich |
| US5742297A (en) * | 1994-11-04 | 1998-04-21 | Lockheed Martin Corporation | Apparatus and method for constructing a mosaic of data |
| US6101294A (en) * | 1997-06-02 | 2000-08-08 | Sarnoff Corporation | Extended dynamic imaging system and method |
| KR100639155B1 (ko) * | 1997-06-02 | 2006-10-27 | 사르노프 코포레이션 | 영상 시스템의 동적 범위를 확장하기 위한 시스템 및 방법 |
| EP0991128B1 (en) * | 1998-09-25 | 2009-11-25 | BAE SYSTEMS Information and Electronic Systems Integration Inc. | Dynamic range extension of CCD imagers |
| US6188433B1 (en) * | 1999-02-02 | 2001-02-13 | Ball Aerospace & Technologies Corp. | Method and apparatus for enhancing the dynamic range of a CCD sensor |
| US6472653B1 (en) * | 1999-03-22 | 2002-10-29 | Sarnoff Corporation | Method and apparatus to extend dynamic range of time delay and integrate charge coupled devices |
| JP2001218113A (ja) * | 2000-02-02 | 2001-08-10 | Minolta Co Ltd | 固体撮像装置 |
| US7265397B1 (en) | 2000-08-30 | 2007-09-04 | Sarnoff Corporation | CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture |
| US20050083421A1 (en) * | 2003-10-16 | 2005-04-21 | Vladimir Berezin | Dynamic range enlargement in CMOS image sensors |
| CN1670962A (zh) * | 2004-03-17 | 2005-09-21 | 三洋电机株式会社 | 电荷耦合元件的电压控制装置及控制方法 |
| US20050212936A1 (en) | 2004-03-25 | 2005-09-29 | Eastman Kodak Company | Extended dynamic range image sensor with fixed pattern noise reduction |
| US7378634B2 (en) * | 2004-07-27 | 2008-05-27 | Sarnoff Corporation | Imaging methods and apparatus having extended dynamic range |
| JP2006108379A (ja) * | 2004-10-05 | 2006-04-20 | Sony Corp | 固体撮像素子及びその駆動方法 |
| US20060082670A1 (en) * | 2004-10-14 | 2006-04-20 | Eastman Kodak Company | Interline CCD for still and video photography with extended dynamic range |
| US7796171B2 (en) * | 2007-02-16 | 2010-09-14 | Flir Advanced Imaging Systems, Inc. | Sensor-based gamma correction of a digital camera |
| US20110073982A1 (en) * | 2007-05-25 | 2011-03-31 | Armstrong J Joseph | Inspection system using back side illuminated linear sensor |
| GB2468668B (en) * | 2009-03-17 | 2014-07-16 | E2V Tech Uk Ltd | CCD imaging array with extended dynamic range |
| US10257448B1 (en) | 2015-08-18 | 2019-04-09 | Sri International | Extended dynamic range imaging sensor and operating mode of the same |
| US10827139B2 (en) | 2015-08-18 | 2020-11-03 | Sri International | Multiple window, multiple mode image sensor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3845295A (en) * | 1973-05-02 | 1974-10-29 | Rca Corp | Charge-coupled radiation sensing circuit with charge skim-off and reset |
| JPS5721904B2 (OSRAM) * | 1973-10-03 | 1982-05-10 | ||
| JPS5339211B2 (OSRAM) * | 1973-10-26 | 1978-10-20 | ||
| US3883437A (en) * | 1974-01-25 | 1975-05-13 | Hughes Aircraft Co | Monolithic IR detector arrays with direct injection charge coupled device readout |
-
1975
- 1975-05-21 US US05/579,690 patent/US3953733A/en not_active Expired - Lifetime
-
1976
- 1976-05-19 GB GB20713/76A patent/GB1531920A/en not_active Expired
- 1976-05-20 CA CA252,988A patent/CA1103346A/en not_active Expired
- 1976-05-20 NL NLAANVRAGE7605367,A patent/NL188261C/xx not_active IP Right Cessation
- 1976-05-20 IT IT23461/76A patent/IT1060656B/it active
- 1976-05-20 JP JP51058987A patent/JPS51142908A/ja active Pending
- 1976-05-20 FR FR7615278A patent/FR2312147A1/fr active Granted
- 1976-05-21 DE DE2622828A patent/DE2622828C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2312147A1 (fr) | 1976-12-17 |
| CA1103346A (en) | 1981-06-16 |
| FR2312147B1 (OSRAM) | 1982-05-28 |
| IT1060656B (it) | 1982-08-20 |
| JPS51142908A (en) | 1976-12-08 |
| NL188261B (nl) | 1991-12-02 |
| NL7605367A (nl) | 1976-11-23 |
| DE2622828A1 (de) | 1976-12-02 |
| NL188261C (nl) | 1992-05-06 |
| US3953733A (en) | 1976-04-27 |
| DE2622828B2 (de) | 1977-12-01 |
| GB1531920A (en) | 1978-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |