IT1060656B - Metodo di funzionamento di un dispositivo per la formazione di immagini - Google Patents

Metodo di funzionamento di un dispositivo per la formazione di immagini

Info

Publication number
IT1060656B
IT1060656B IT23461/76A IT2346176A IT1060656B IT 1060656 B IT1060656 B IT 1060656B IT 23461/76 A IT23461/76 A IT 23461/76A IT 2346176 A IT2346176 A IT 2346176A IT 1060656 B IT1060656 B IT 1060656B
Authority
IT
Italy
Prior art keywords
images
formation
Prior art date
Application number
IT23461/76A
Other languages
English (en)
Italian (it)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1060656B publication Critical patent/IT1060656B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/476—Three-phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IT23461/76A 1975-05-21 1976-05-20 Metodo di funzionamento di un dispositivo per la formazione di immagini IT1060656B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/579,690 US3953733A (en) 1975-05-21 1975-05-21 Method of operating imagers

Publications (1)

Publication Number Publication Date
IT1060656B true IT1060656B (it) 1982-08-20

Family

ID=24317943

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23461/76A IT1060656B (it) 1975-05-21 1976-05-20 Metodo di funzionamento di un dispositivo per la formazione di immagini

Country Status (8)

Country Link
US (1) US3953733A (OSRAM)
JP (1) JPS51142908A (OSRAM)
CA (1) CA1103346A (OSRAM)
DE (1) DE2622828C3 (OSRAM)
FR (1) FR2312147A1 (OSRAM)
GB (1) GB1531920A (OSRAM)
IT (1) IT1060656B (OSRAM)
NL (1) NL188261C (OSRAM)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538015A (en) * 1976-07-12 1978-01-25 Toshiba Corp Pick up system with charge coupled element
JPS5451318A (en) * 1977-09-29 1979-04-23 Sony Corp Solid pickup unit
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
EP0033129B1 (en) * 1980-01-25 1984-06-13 Kabushiki Kaisha Toshiba Charge transfer apparatus
US4314275A (en) * 1980-03-24 1982-02-02 Texas Instruments Incorporated Infrared time delay with integration CTD imager
US4377755A (en) * 1980-07-15 1983-03-22 The United States Of America As Represented By The Secretary Of The Air Force Signal compressor apparatus
JPS586682A (ja) * 1981-07-06 1983-01-14 Sony Corp 固体撮像装置
US4598414A (en) * 1981-12-18 1986-07-01 Honeywell Inc. Input compression apparatus for charge coupled devices
FR2537813B1 (fr) * 1982-12-10 1986-10-10 Thomson Csf Procede de reglage des conditions de fonctionnement d'un dispositif photosensible a transfert de charge et dispositif pour sa mise en oeuvre
JPH0815322B2 (ja) * 1986-05-21 1996-02-14 キヤノン株式会社 固体撮像装置
US4926247A (en) * 1986-10-15 1990-05-15 Olympus Optical Co., Ltd. Color imaging apparatus including a means for electronically non-linearly expanding and compressing dynamic range of an image signal
US5008758A (en) * 1989-05-24 1991-04-16 Massachusetts Institute Of Technology Suppressing dark current in charge-coupled devices
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
US5295001A (en) * 1990-11-01 1994-03-15 Canon Kabushiki Kaisha Image sensing apparatus having tone control function
US5276520A (en) * 1991-06-07 1994-01-04 Eastman Kodak Company Enhancing exposure latitude of image sensors
US5426515A (en) * 1992-06-01 1995-06-20 Eastman Kodak Company Lateral overflow gate driver circuit for linear CCD sensor
DE19519743A1 (de) * 1994-05-31 1995-12-07 Dalsa Inc Photodetektor mit schaltungsgesteuerten CCD-Elektroden
DE69517375T2 (de) * 1994-08-31 2001-03-01 Matsushita Electric Industrial Co., Ltd. Bildaufnahmevorrichtung mit weitem Dynamikbereich
US5742297A (en) * 1994-11-04 1998-04-21 Lockheed Martin Corporation Apparatus and method for constructing a mosaic of data
US6101294A (en) * 1997-06-02 2000-08-08 Sarnoff Corporation Extended dynamic imaging system and method
KR100639155B1 (ko) * 1997-06-02 2006-10-27 사르노프 코포레이션 영상 시스템의 동적 범위를 확장하기 위한 시스템 및 방법
EP0991128B1 (en) * 1998-09-25 2009-11-25 BAE SYSTEMS Information and Electronic Systems Integration Inc. Dynamic range extension of CCD imagers
US6188433B1 (en) * 1999-02-02 2001-02-13 Ball Aerospace & Technologies Corp. Method and apparatus for enhancing the dynamic range of a CCD sensor
US6472653B1 (en) * 1999-03-22 2002-10-29 Sarnoff Corporation Method and apparatus to extend dynamic range of time delay and integrate charge coupled devices
JP2001218113A (ja) * 2000-02-02 2001-08-10 Minolta Co Ltd 固体撮像装置
US7265397B1 (en) 2000-08-30 2007-09-04 Sarnoff Corporation CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture
US20050083421A1 (en) * 2003-10-16 2005-04-21 Vladimir Berezin Dynamic range enlargement in CMOS image sensors
CN1670962A (zh) * 2004-03-17 2005-09-21 三洋电机株式会社 电荷耦合元件的电压控制装置及控制方法
US20050212936A1 (en) 2004-03-25 2005-09-29 Eastman Kodak Company Extended dynamic range image sensor with fixed pattern noise reduction
US7378634B2 (en) * 2004-07-27 2008-05-27 Sarnoff Corporation Imaging methods and apparatus having extended dynamic range
JP2006108379A (ja) * 2004-10-05 2006-04-20 Sony Corp 固体撮像素子及びその駆動方法
US20060082670A1 (en) * 2004-10-14 2006-04-20 Eastman Kodak Company Interline CCD for still and video photography with extended dynamic range
US7796171B2 (en) * 2007-02-16 2010-09-14 Flir Advanced Imaging Systems, Inc. Sensor-based gamma correction of a digital camera
US20110073982A1 (en) * 2007-05-25 2011-03-31 Armstrong J Joseph Inspection system using back side illuminated linear sensor
GB2468668B (en) * 2009-03-17 2014-07-16 E2V Tech Uk Ltd CCD imaging array with extended dynamic range
US10257448B1 (en) 2015-08-18 2019-04-09 Sri International Extended dynamic range imaging sensor and operating mode of the same
US10827139B2 (en) 2015-08-18 2020-11-03 Sri International Multiple window, multiple mode image sensor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845295A (en) * 1973-05-02 1974-10-29 Rca Corp Charge-coupled radiation sensing circuit with charge skim-off and reset
JPS5721904B2 (OSRAM) * 1973-10-03 1982-05-10
JPS5339211B2 (OSRAM) * 1973-10-26 1978-10-20
US3883437A (en) * 1974-01-25 1975-05-13 Hughes Aircraft Co Monolithic IR detector arrays with direct injection charge coupled device readout

Also Published As

Publication number Publication date
FR2312147A1 (fr) 1976-12-17
DE2622828C3 (de) 1978-07-13
CA1103346A (en) 1981-06-16
FR2312147B1 (OSRAM) 1982-05-28
JPS51142908A (en) 1976-12-08
NL188261B (nl) 1991-12-02
NL7605367A (nl) 1976-11-23
DE2622828A1 (de) 1976-12-02
NL188261C (nl) 1992-05-06
US3953733A (en) 1976-04-27
DE2622828B2 (de) 1977-12-01
GB1531920A (en) 1978-11-15

Similar Documents

Publication Publication Date Title
IT1060656B (it) Metodo di funzionamento di un dispositivo per la formazione di immagini
IT1058674B (it) Metodo di fabbricazione di un dispositivo semiconduttore
BG27743A3 (bg) Метод за получаване на аминоалкил-хетероцикли
RO63065A (fr) Procede d'obtention d'un inhibiteur de glycosidehydrolase
BG27362A3 (bg) Метод за получаване на n-фенил-n-бензоил-карбамиди
IT1044147B (it) Dispositivo per la realizzazione di un gioco
BG25224A3 (bg) Метод за получаване на заместени пиримидони
IT1068578B (it) Procedimento e dispositivo per la formazione di un filone per sigarette
BG24809A3 (bg) Метод за получаване на бензизотиазолони
BG24799A3 (bg) Метод за получаване на бензоилуреидо-дифенилетери
SE7604362L (sv) Metanordning for en massas viskositet
IT1059016B (it) Metodo di fabbricazione di un dispositivo semiconduttore
BG27230A3 (bg) Метод за получаване на субституирани индоленини
BG24801A3 (bg) Метод за получаване наl-пироглутамилl-пролинамид
BG26535A3 (bg) Метод за получаване на индолхинолизини
BG27732A3 (bg) Метод за получаване на дизаместени фенолстерини-3-амино-2- хидроксипропан
IT1067265B (it) Metodo di formazione di un dispositivo semiconduttore
IT1055901B (it) Dispositivo per l applicazione di un coperchio
BG26534A4 (bg) Метод за получаване на 2-метил-2-цианометил-5- изопропилтетрахидрофуран
SU426992A1 (OSRAM)
JPS5251943A (en) Image forming method
IT1058642B (it) Procedimento per fabbricare un transistor
BG26381A3 (bg) Метод за получаване на заместени фенилпиперазини
IT1082080B (it) Metodo di fabbricazione di un dispositivo semiconduttore
SU457695A1 (ru) Способ получени -аминопропионитрила