DE3874775T2 - Halbleiterbildsensor. - Google Patents

Halbleiterbildsensor.

Info

Publication number
DE3874775T2
DE3874775T2 DE8888103390T DE3874775T DE3874775T2 DE 3874775 T2 DE3874775 T2 DE 3874775T2 DE 8888103390 T DE8888103390 T DE 8888103390T DE 3874775 T DE3874775 T DE 3874775T DE 3874775 T2 DE3874775 T2 DE 3874775T2
Authority
DE
Germany
Prior art keywords
image sensor
semiconductor image
semiconductor
sensor
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888103390T
Other languages
English (en)
Other versions
DE3874775D1 (de
Inventor
Isao Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62051337A external-priority patent/JP2526886B2/ja
Priority claimed from JP62091418A external-priority patent/JP2526895B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3874775D1 publication Critical patent/DE3874775D1/de
Application granted granted Critical
Publication of DE3874775T2 publication Critical patent/DE3874775T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
    • H04N3/1556—Control of the image-sensor operation, e.g. image processing within the image-sensor for variable integration time
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE8888103390T 1987-03-06 1988-03-04 Halbleiterbildsensor. Expired - Fee Related DE3874775T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62051337A JP2526886B2 (ja) 1987-03-06 1987-03-06 固体撮像装置
JP62091418A JP2526895B2 (ja) 1987-04-14 1987-04-14 固体撮像装置

Publications (2)

Publication Number Publication Date
DE3874775D1 DE3874775D1 (de) 1992-10-29
DE3874775T2 true DE3874775T2 (de) 1993-01-28

Family

ID=26391869

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888103390T Expired - Fee Related DE3874775T2 (de) 1987-03-06 1988-03-04 Halbleiterbildsensor.

Country Status (4)

Country Link
US (1) US4856033A (de)
EP (1) EP0281153B1 (de)
CA (1) CA1292062C (de)
DE (1) DE3874775T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022793A (ja) * 1988-06-15 1990-01-08 Nec Corp ２次元ｃｃｄ撮像素子の駆動方法
FR2638309B1 (fr) * 1988-10-25 1996-05-24 Trefimetaux Plaquette de pretraitement des courants de sortie de diodes de detection soumises a un rayonnement thermique
US5095226A (en) * 1989-08-08 1992-03-10 Asahi Kogaku Kogyo Kabushiki Kaisha Device for operating charge transfer device with different power supply voltages
US5047862A (en) * 1989-10-12 1991-09-10 Eastman Kodak Company Solid-state imager
KR920007353B1 (ko) * 1990-03-19 1992-08-31 삼성전자 주식회사 일시화면정지기능을 가지는 고체영상소자
US5121214A (en) * 1990-06-29 1992-06-09 The United States Of America As Represented By The United States Department Of Energy Method for eliminating artifacts in CCD imagers
JP3274745B2 (ja) * 1993-07-15 2002-04-15 株式会社ニコン 測光素子
JPH08264747A (ja) * 1995-03-16 1996-10-11 Eastman Kodak Co コンテナ側方オーバーフロードレインインプラントを有する固体画像化器及びその製造方法
JPH09200605A (ja) * 1996-01-12 1997-07-31 Sanyo Electric Co Ltd ディジタルビデオカメラ
KR100192435B1 (ko) * 1996-06-10 1999-06-15 구본준 씨씨아이알/이아이에이 모드변환 기능의 고체촬상소자
JPH11220663A (ja) * 1998-02-03 1999-08-10 Matsushita Electron Corp 固体撮像装置およびその駆動方法
JP2003110944A (ja) * 2001-10-02 2003-04-11 Sanyo Electric Co Ltd 撮像装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931463A (en) * 1974-07-23 1976-01-06 Rca Corporation Scene brightness compensation system with charge transfer imager
JPS5827712B2 (ja) * 1975-12-25 1983-06-10 株式会社東芝 コタイサツゾウソウチ
JPS6033345B2 (ja) * 1979-06-08 1985-08-02 日本電気株式会社 電荷転送撮像装置とその駆動方法
JPS5810977A (ja) * 1981-07-13 1983-01-21 Sony Corp 固体撮像装置
GB8314300D0 (en) * 1983-05-24 1983-06-29 Gen Electric Co Plc Image sensors
JP2526205B2 (ja) * 1985-10-22 1996-08-21 松下電子工業株式会社 固体撮像装置の駆動方法
EP0225133B1 (de) * 1985-11-20 1992-05-06 Nec Corporation Verfahren zum Betrieb eines zweidimensionalen Ladungsübertragungsbildsensors

Also Published As

Publication number Publication date
CA1292062C (en) 1991-11-12
US4856033A (en) 1989-08-08
DE3874775D1 (de) 1992-10-29
EP0281153B1 (de) 1992-09-23
EP0281153A1 (de) 1988-09-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee