DE2610301C2 - Verfahren zur Herstellung einer positiv wirkenden Resistmaterialschicht und Verfahren zum Erzeugen eines Resistmusters - Google Patents
Verfahren zur Herstellung einer positiv wirkenden Resistmaterialschicht und Verfahren zum Erzeugen eines ResistmustersInfo
- Publication number
- DE2610301C2 DE2610301C2 DE2610301A DE2610301A DE2610301C2 DE 2610301 C2 DE2610301 C2 DE 2610301C2 DE 2610301 A DE2610301 A DE 2610301A DE 2610301 A DE2610301 A DE 2610301A DE 2610301 C2 DE2610301 C2 DE 2610301C2
- Authority
- DE
- Germany
- Prior art keywords
- group
- substrate
- general formula
- groups
- alkyl group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 229920001577 copolymer Polymers 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- VHRYZQNGTZXDNX-UHFFFAOYSA-N methacryloyl chloride Chemical compound CC(=C)C(Cl)=O VHRYZQNGTZXDNX-UHFFFAOYSA-N 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 6
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 5
- -1 carboxylic acid compound Chemical class 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- 125000004423 acyloxy group Chemical group 0.000 claims description 3
- 238000004132 cross linking Methods 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 239000012442 inert solvent Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 11
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 9
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical group CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001244 carboxylic acid anhydrides Chemical group 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical group O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920006061 Kelon® Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical group 0.000 description 1
- 241001233037 catfish Species 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011243 crosslinked material Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000012258 stirred mixture Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1166075A GB1500541A (en) | 1975-03-20 | 1975-03-20 | Method of producing positive-working electron resist coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2610301A1 DE2610301A1 (de) | 1976-09-30 |
| DE2610301C2 true DE2610301C2 (de) | 1985-01-17 |
Family
ID=9990342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2610301A Expired DE2610301C2 (de) | 1975-03-20 | 1976-03-12 | Verfahren zur Herstellung einer positiv wirkenden Resistmaterialschicht und Verfahren zum Erzeugen eines Resistmusters |
Country Status (6)
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5466829A (en) * | 1977-11-07 | 1979-05-29 | Fujitsu Ltd | Pattern formation materil |
| JPS5466122A (en) * | 1977-11-07 | 1979-05-28 | Fujitsu Ltd | Pattern formation material |
| DE2757931A1 (de) * | 1977-12-24 | 1979-07-12 | Licentia Gmbh | Verfahren zum herstellen von positiven aetzresistenten masken |
| DE2757932A1 (de) * | 1977-12-24 | 1979-07-05 | Licentia Gmbh | Strahlungsempfindliche positiv arbeitende materialien |
| JPS54158173A (en) * | 1978-06-05 | 1979-12-13 | Fujitsu Ltd | Micropattern forming method |
| DE2828128A1 (de) * | 1978-06-27 | 1980-01-10 | Licentia Gmbh | Strahlungsempfindliche positiv arbeitende materialien |
| JPS5590942A (en) * | 1978-12-29 | 1980-07-10 | Fujitsu Ltd | Positive type resist material |
| DE3060510D1 (en) * | 1979-03-09 | 1982-07-29 | Thomson Csf | Photomasking substances, process for preparing them and mask obtained |
| JPS55133042A (en) * | 1979-04-04 | 1980-10-16 | Fujitsu Ltd | Pattern forming method |
| US4276365A (en) * | 1979-07-02 | 1981-06-30 | Fujitsu Limited | Positive resist terpolymer composition and method of forming resist pattern |
| DE3246825A1 (de) * | 1982-02-24 | 1983-09-01 | Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Positives resistmaterial |
| US4448875A (en) * | 1983-03-31 | 1984-05-15 | Gaf Corporation | Electron beam sensitive mixture resist |
| JP2707785B2 (ja) * | 1990-03-13 | 1998-02-04 | 富士通株式会社 | レジスト組成物およびパターン形成方法 |
| US5789140A (en) * | 1996-04-25 | 1998-08-04 | Fujitsu Limited | Method of forming a pattern or via structure utilizing supplemental electron beam exposure and development to remove image residue |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3441545A (en) * | 1963-11-01 | 1969-04-29 | Du Pont | Modification of olefin-carboxylic acid halide copolymers |
| US3647771A (en) * | 1964-01-30 | 1972-03-07 | Sumitomo Chemical Co | Alternating copolymers of alpha-olefins and vinyl compounds and a process for manufacturing the same |
| GB1275632A (en) * | 1968-06-25 | 1972-05-24 | Hart Schaffner & Marx Inc | A method of making tailored garments |
| US3631157A (en) * | 1970-02-09 | 1971-12-28 | Dow Chemical Co | Reactive mixed anhydride-containing polymers and a method for their preparation |
| JPS5119047B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-04-14 | 1976-06-15 | ||
| GB1445345A (en) * | 1972-12-21 | 1976-08-11 | Mullard Ltd | Positive-working electron resists |
| JPS5639680B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-04-02 | 1981-09-14 |
-
1975
- 1975-03-20 GB GB1166075A patent/GB1500541A/en not_active Expired
-
1976
- 1976-03-12 DE DE2610301A patent/DE2610301C2/de not_active Expired
- 1976-03-16 NL NL7602708A patent/NL175107C/xx not_active IP Right Cessation
- 1976-03-17 JP JP2907876A patent/JPS51117577A/ja active Granted
- 1976-03-19 FR FR7608022A patent/FR2304943A1/fr active Granted
- 1976-03-19 US US05/668,486 patent/US4061832A/en not_active Expired - Lifetime
-
1981
- 1981-10-27 JP JP17085881A patent/JPS5798517A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL175107C (nl) | 1984-09-17 |
| NL7602708A (nl) | 1976-09-22 |
| FR2304943A1 (fr) | 1976-10-15 |
| JPS6342770B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-08-25 |
| DE2610301A1 (de) | 1976-09-30 |
| GB1500541A (en) | 1978-02-08 |
| FR2304943B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-12-08 |
| JPS5719411B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-04-22 |
| US4061832A (en) | 1977-12-06 |
| JPS51117577A (en) | 1976-10-15 |
| JPS5798517A (en) | 1982-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2610301C2 (de) | Verfahren zur Herstellung einer positiv wirkenden Resistmaterialschicht und Verfahren zum Erzeugen eines Resistmusters | |
| EP0512339B1 (de) | Hochwärmebeständige Positivresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen | |
| DE69110975T2 (de) | Lösliches Calixarenderivat und Filme von diesem. | |
| DE2914619C2 (de) | Lichtempfindliches Gemisch | |
| DE1765994C3 (de) | Flüssige elektrische Widerstandsmasse hoher Lagerstabilität zur Herstellung hitzebeständiger Widerstände | |
| DE2842134A1 (de) | Verfahren zum aufbringen einer schicht aus einem fluorierten material | |
| EP0059790A1 (de) | Verfahren zur Herstellung dünner Polyimidschichten | |
| DE2363092C2 (de) | Photodepolymerisierbares Gemisch und dessen Verwendung | |
| DE2753658A1 (de) | Verfahren zur herstellung eines positiven resistbildes | |
| DD295256A5 (de) | Photoresist | |
| DE3751745T2 (de) | Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius | |
| EP0157929A1 (de) | Verfahren zur Herstellung von Polyimid- und Polyisoindolochinazolindion-Vorstufen | |
| DE3027542A1 (de) | Cyanoethylpullulan und verfahren zu seiner herstellung | |
| DE2743763A1 (de) | Positivlackmaterial und verfahren zur herstellung einer lackmaske | |
| DE1957598A1 (de) | Polyimid-Massen und hiermit ueberzogene Metall-Gegenstaende | |
| EP0157930B1 (de) | Verfahren zur Herstellung von Polyimid- und Polyisoindolochinazolindion-Reliefstrukturen | |
| DE102006024959A1 (de) | Polymer für eine Hartmaske einer Halbleitervorrichtung und Zusammensetzung enthaltend dieselbe | |
| EP0157932B1 (de) | Verfahren zur Herstellung von Polyimidazol- und Polyimidazopyrrolon-Reliefstrukturen | |
| DE2849996A1 (de) | Zur herstellung eines durch bestrahlung erzeugten positivbildes verwendbarer abdecklack und verfahren zur herstellung eines positivbildes durch bestrahlung | |
| EP0157931A1 (de) | Verfahren zur Herstellung von Polyimidazol- und Polyimidazopyrrolon-Vorstufen | |
| DE3751866T2 (de) | Polyimidfolie und Verfahren zu deren Herstellung | |
| DE4325776A1 (de) | Verfahren zum Vernetzen von organischen Polymerisaten | |
| DE10145469B4 (de) | Poly-o-hydroxyamid und Verfahren zu seiner Weiterverarbeitung zu Polybenzoxazol | |
| WO1993011196A1 (de) | Zusammensetzung mit integrierten intumeszierenden eigenschaften | |
| EP0733665A1 (de) | Verfahren zur Herstellung von Polybenzoxazol-Vorstufen und entsprechender Resistlösungen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8128 | New person/name/address of the agent |
Representative=s name: PIEGLER, H., DIPL.-CHEM., 2000 HAMBURG |
|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: G03C 1/68 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |