JPS54158173A - Micropattern forming method - Google Patents

Micropattern forming method

Info

Publication number
JPS54158173A
JPS54158173A JP6666678A JP6666678A JPS54158173A JP S54158173 A JPS54158173 A JP S54158173A JP 6666678 A JP6666678 A JP 6666678A JP 6666678 A JP6666678 A JP 6666678A JP S54158173 A JPS54158173 A JP S54158173A
Authority
JP
Japan
Prior art keywords
component
resist
specified
forming method
micropattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6666678A
Other languages
Japanese (ja)
Inventor
Toshisuke Kitakoji
Yasuhiro Yoneda
Tateo Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6666678A priority Critical patent/JPS54158173A/en
Publication of JPS54158173A publication Critical patent/JPS54158173A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE: To secure an easy formation of the micropattern for the micropattern forming method using the ionizing radiation by applying the resist to the substrate, which is obtained by dissolving the specified component and the copolymer containing the unit composed of the specified component into the specified solvent.
CONSTITUTION: The copolymer is formed containing the unit obtained from the following components: component A composed of the ester methacrylate containing the alkyl group, cycloalkyl group or alalkyl group; component B composed of the methacrylate chloride or other monoethylene unsaturated aliphatic carboxylic acid; and component C composed of the methacrylate chloride or other monoethylene unsaturated aliphatic carboxylic chloride respectively. The units led from component B and C are set to 1W20 mol% and 0.05W3 mol% each, and the resist obtained by dissolving the copolymer containing more component B than C into the solvent is applied to the substrate. This resist undergoes the prebaking to draw the pattern with irradiation of the ionizing radiation, and then the pattern is formed through development.
COPYRIGHT: (C)1979,JPO&Japio
JP6666678A 1978-06-05 1978-06-05 Micropattern forming method Pending JPS54158173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6666678A JPS54158173A (en) 1978-06-05 1978-06-05 Micropattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6666678A JPS54158173A (en) 1978-06-05 1978-06-05 Micropattern forming method

Publications (1)

Publication Number Publication Date
JPS54158173A true JPS54158173A (en) 1979-12-13

Family

ID=13322444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6666678A Pending JPS54158173A (en) 1978-06-05 1978-06-05 Micropattern forming method

Country Status (1)

Country Link
JP (1) JPS54158173A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61201426A (en) * 1985-03-04 1986-09-06 Sony Corp Baking of photoresist

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49103632A (en) * 1972-12-21 1974-10-01 Philips Nv
JPS51117577A (en) * 1975-03-20 1976-10-15 Philips Nv Positive operation type electron resist
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil
JPS5466776A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Fine pattern forming method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49103632A (en) * 1972-12-21 1974-10-01 Philips Nv
JPS51117577A (en) * 1975-03-20 1976-10-15 Philips Nv Positive operation type electron resist
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil
JPS5466776A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Fine pattern forming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61201426A (en) * 1985-03-04 1986-09-06 Sony Corp Baking of photoresist

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