JPS5588051A - Forming method for positive type resist pattern - Google Patents

Forming method for positive type resist pattern

Info

Publication number
JPS5588051A
JPS5588051A JP15997778A JP15997778A JPS5588051A JP S5588051 A JPS5588051 A JP S5588051A JP 15997778 A JP15997778 A JP 15997778A JP 15997778 A JP15997778 A JP 15997778A JP S5588051 A JPS5588051 A JP S5588051A
Authority
JP
Japan
Prior art keywords
positive type
type resist
units derived
ray
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15997778A
Other languages
Japanese (ja)
Inventor
Tateo Kitamura
Yasuhiro Yoneda
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15997778A priority Critical patent/JPS5588051A/en
Publication of JPS5588051A publication Critical patent/JPS5588051A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To form a superior pattern free from swelling phenomena or the like, by irradiating by electron beam or X-ray a positive type resist having a 3-dimensional reticular structure using methacrylic ester as a basic structure, and by developing a latent resist pattern with an organic solvent. CONSTITUTION:(a) Units derived from methacrylic ester of the formula shown (R is 1-6C alkyl, haloalkyl, benzyl, or cyclohexyl); (b) units derived from monoolefinic unsaturated carboxylic acid having 1-3 C3-C12 groups; and (c) units derived from methacryloyl chloride are polymerized to form a 3-dimensional structure. The positive type resist having this structure are inrradiated by electron beam, X-ray, ultraviolet ray, or the like to draw a pattern, and this is developed with mixed solvents of acetone and an aliphatic saturated lower alcohol.
JP15997778A 1978-12-27 1978-12-27 Forming method for positive type resist pattern Pending JPS5588051A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15997778A JPS5588051A (en) 1978-12-27 1978-12-27 Forming method for positive type resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15997778A JPS5588051A (en) 1978-12-27 1978-12-27 Forming method for positive type resist pattern

Publications (1)

Publication Number Publication Date
JPS5588051A true JPS5588051A (en) 1980-07-03

Family

ID=15705298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15997778A Pending JPS5588051A (en) 1978-12-27 1978-12-27 Forming method for positive type resist pattern

Country Status (1)

Country Link
JP (1) JPS5588051A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5865432A (en) * 1981-08-21 1983-04-19 ゼネラル・エレクトリツク・カンパニイ Etching of polymethyl methacrylate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5865432A (en) * 1981-08-21 1983-04-19 ゼネラル・エレクトリツク・カンパニイ Etching of polymethyl methacrylate

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