JPS54116226A - Formation method for positive type resist image - Google Patents
Formation method for positive type resist imageInfo
- Publication number
- JPS54116226A JPS54116226A JP2305978A JP2305978A JPS54116226A JP S54116226 A JPS54116226 A JP S54116226A JP 2305978 A JP2305978 A JP 2305978A JP 2305978 A JP2305978 A JP 2305978A JP S54116226 A JPS54116226 A JP S54116226A
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- irradiated
- formula
- copolymer
- halogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Abstract
PURPOSE:To enhance sensitivity without deteriorating excellent fine image formation capability of a (meth)acrylic ester copolymer, by treating a radiation sensitive layer irradiated by radiation with a specified quaternary ammonium salt solution. CONSTITUTION:A copolymer having units of formula I in which R<1> and R<2> are H or methyl, and units of formula II in which R<3> is methyl, cyano, or halogen and R<4> is lower alkyl, especially a n-butyl-alpha-cyanoacrylate-methacrylic acid copolymer is dissolved in a solvent, if necessary, together with an additive like a sensitizer, and this solution is coated on a substrate. The radiation sensitive layer formed is prebaked, if needed, then, irradiated with a radiation in a predetermined pattern, and developed with a solvent, such as alcohols, dissolving a quaternary ammonium salt of formula III in which R<5>-R<7> are alkyl, and X is halogen, to eliminate the parts irradiated by radiation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2305978A JPS608493B2 (en) | 1978-03-01 | 1978-03-01 | Method for forming a positive resist image |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2305978A JPS608493B2 (en) | 1978-03-01 | 1978-03-01 | Method for forming a positive resist image |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54116226A true JPS54116226A (en) | 1979-09-10 |
JPS608493B2 JPS608493B2 (en) | 1985-03-04 |
Family
ID=12099849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2305978A Expired JPS608493B2 (en) | 1978-03-01 | 1978-03-01 | Method for forming a positive resist image |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS608493B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55134847A (en) * | 1979-04-06 | 1980-10-21 | Nec Corp | Manufacture of resist image |
JPS5857128A (en) * | 1981-09-30 | 1983-04-05 | Toshiba Corp | Positive type photoresist developing solution |
JPS5868745A (en) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | Production of relief structural body |
JPS58114033A (en) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | Formation of pattern |
JPH049956A (en) * | 1990-04-27 | 1992-01-14 | Mitsubishi Electric Corp | Developer composition for positive type photoresist |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62248887A (en) * | 1986-04-21 | 1987-10-29 | Matsushita Refrig Co | Scroll type compressor |
JPH0842468A (en) * | 1995-04-03 | 1996-02-13 | Hitachi Ltd | Scroll compressor |
-
1978
- 1978-03-01 JP JP2305978A patent/JPS608493B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55134847A (en) * | 1979-04-06 | 1980-10-21 | Nec Corp | Manufacture of resist image |
JPS5857128A (en) * | 1981-09-30 | 1983-04-05 | Toshiba Corp | Positive type photoresist developing solution |
JPS5868745A (en) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | Production of relief structural body |
JPH0237580B2 (en) * | 1981-10-21 | 1990-08-24 | Hitachi Ltd | |
JPS58114033A (en) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | Formation of pattern |
JPH049956A (en) * | 1990-04-27 | 1992-01-14 | Mitsubishi Electric Corp | Developer composition for positive type photoresist |
Also Published As
Publication number | Publication date |
---|---|
JPS608493B2 (en) | 1985-03-04 |
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