JPS51117577A - Positive operation type electron resist - Google Patents

Positive operation type electron resist

Info

Publication number
JPS51117577A
JPS51117577A JP2907876A JP2907876A JPS51117577A JP S51117577 A JPS51117577 A JP S51117577A JP 2907876 A JP2907876 A JP 2907876A JP 2907876 A JP2907876 A JP 2907876A JP S51117577 A JPS51117577 A JP S51117577A
Authority
JP
Japan
Prior art keywords
operation type
type electron
positive operation
electron resist
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2907876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5719411B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Edward D Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS51117577A publication Critical patent/JPS51117577A/ja
Publication of JPS5719411B2 publication Critical patent/JPS5719411B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2907876A 1975-03-20 1976-03-17 Positive operation type electron resist Granted JPS51117577A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1166075A GB1500541A (en) 1975-03-20 1975-03-20 Method of producing positive-working electron resist coatings

Publications (2)

Publication Number Publication Date
JPS51117577A true JPS51117577A (en) 1976-10-15
JPS5719411B2 JPS5719411B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-04-22

Family

ID=9990342

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2907876A Granted JPS51117577A (en) 1975-03-20 1976-03-17 Positive operation type electron resist
JP17085881A Granted JPS5798517A (en) 1975-03-20 1981-10-27 Copolymer

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP17085881A Granted JPS5798517A (en) 1975-03-20 1981-10-27 Copolymer

Country Status (6)

Country Link
US (1) US4061832A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JPS51117577A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2610301C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2304943A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1500541A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL175107C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466122A (en) * 1977-11-07 1979-05-28 Fujitsu Ltd Pattern formation material
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil
JPS54158173A (en) * 1978-06-05 1979-12-13 Fujitsu Ltd Micropattern forming method
JPS5590942A (en) * 1978-12-29 1980-07-10 Fujitsu Ltd Positive type resist material
JPS55133042A (en) * 1979-04-04 1980-10-16 Fujitsu Ltd Pattern forming method

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2757931A1 (de) * 1977-12-24 1979-07-12 Licentia Gmbh Verfahren zum herstellen von positiven aetzresistenten masken
DE2757932A1 (de) * 1977-12-24 1979-07-05 Licentia Gmbh Strahlungsempfindliche positiv arbeitende materialien
DE2828128A1 (de) * 1978-06-27 1980-01-10 Licentia Gmbh Strahlungsempfindliche positiv arbeitende materialien
DE3060510D1 (en) * 1979-03-09 1982-07-29 Thomson Csf Photomasking substances, process for preparing them and mask obtained
US4276365A (en) * 1979-07-02 1981-06-30 Fujitsu Limited Positive resist terpolymer composition and method of forming resist pattern
DE3246825A1 (de) * 1982-02-24 1983-09-01 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Positives resistmaterial
US4448875A (en) * 1983-03-31 1984-05-15 Gaf Corporation Electron beam sensitive mixture resist
JP2707785B2 (ja) * 1990-03-13 1998-02-04 富士通株式会社 レジスト組成物およびパターン形成方法
US5789140A (en) * 1996-04-25 1998-08-04 Fujitsu Limited Method of forming a pattern or via structure utilizing supplemental electron beam exposure and development to remove image residue

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3441545A (en) * 1963-11-01 1969-04-29 Du Pont Modification of olefin-carboxylic acid halide copolymers
US3647771A (en) * 1964-01-30 1972-03-07 Sumitomo Chemical Co Alternating copolymers of alpha-olefins and vinyl compounds and a process for manufacturing the same
GB1275632A (en) * 1968-06-25 1972-05-24 Hart Schaffner & Marx Inc A method of making tailored garments
US3631157A (en) * 1970-02-09 1971-12-28 Dow Chemical Co Reactive mixed anhydride-containing polymers and a method for their preparation
JPS5119047B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-04-14 1976-06-15
GB1445345A (en) * 1972-12-21 1976-08-11 Mullard Ltd Positive-working electron resists
JPS5639680B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-04-02 1981-09-14

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466122A (en) * 1977-11-07 1979-05-28 Fujitsu Ltd Pattern formation material
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil
WO1979000284A1 (en) * 1977-11-07 1979-05-31 Fujitsu Ltd Positive type resist polymer composition and method of making resist patterns
WO1979000283A1 (en) * 1977-11-07 1979-05-31 Fujitsu Ltd Positive type resist polymer composition and method of making resist patterns
JPS54158173A (en) * 1978-06-05 1979-12-13 Fujitsu Ltd Micropattern forming method
JPS5590942A (en) * 1978-12-29 1980-07-10 Fujitsu Ltd Positive type resist material
JPS55133042A (en) * 1979-04-04 1980-10-16 Fujitsu Ltd Pattern forming method

Also Published As

Publication number Publication date
NL175107C (nl) 1984-09-17
NL7602708A (nl) 1976-09-22
FR2304943A1 (fr) 1976-10-15
JPS6342770B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-08-25
DE2610301A1 (de) 1976-09-30
GB1500541A (en) 1978-02-08
FR2304943B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-12-08
JPS5719411B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-04-22
US4061832A (en) 1977-12-06
DE2610301C2 (de) 1985-01-17
JPS5798517A (en) 1982-06-18

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