DE2541907C3 - Verfahren zum Herstellen eines Lateraltransistors - Google Patents
Verfahren zum Herstellen eines LateraltransistorsInfo
- Publication number
- DE2541907C3 DE2541907C3 DE19752541907 DE2541907A DE2541907C3 DE 2541907 C3 DE2541907 C3 DE 2541907C3 DE 19752541907 DE19752541907 DE 19752541907 DE 2541907 A DE2541907 A DE 2541907A DE 2541907 C3 DE2541907 C3 DE 2541907C3
- Authority
- DE
- Germany
- Prior art keywords
- doping
- emitter
- zone
- semiconductor layer
- lateral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 42
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000002800 charge carrier Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000011282 treatment Methods 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims description 2
- 125000004437 phosphorous atom Chemical group 0.000 claims description 2
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 238000002513 implantation Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- -1 phosphorus ions Chemical class 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752541907 DE2541907C3 (de) | 1975-09-19 | 1975-09-19 | Verfahren zum Herstellen eines Lateraltransistors |
| GB3209576A GB1559873A (en) | 1975-09-19 | 1976-08-02 | Laterial bipolar transistore |
| CH1065076A CH610442A5 (en) | 1975-09-19 | 1976-08-23 | Lateral bipolar transistor |
| FR7627473A FR2325198A1 (fr) | 1975-09-19 | 1976-09-13 | Transistor lateral bipolaire |
| IT2724776A IT1070809B (it) | 1975-09-19 | 1976-09-16 | Transistore bipolare laterale |
| CA261,548A CA1053380A (en) | 1975-09-19 | 1976-09-20 | Lateral bipolar transistor |
| US05/899,264 US4167425A (en) | 1975-09-19 | 1978-04-24 | Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752541907 DE2541907C3 (de) | 1975-09-19 | 1975-09-19 | Verfahren zum Herstellen eines Lateraltransistors |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2541907A1 DE2541907A1 (de) | 1977-03-24 |
| DE2541907B2 DE2541907B2 (de) | 1978-03-02 |
| DE2541907C3 true DE2541907C3 (de) | 1978-10-26 |
Family
ID=5956946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752541907 Expired DE2541907C3 (de) | 1975-09-19 | 1975-09-19 | Verfahren zum Herstellen eines Lateraltransistors |
Country Status (6)
| Country | Link |
|---|---|
| CA (1) | CA1053380A (xx) |
| CH (1) | CH610442A5 (xx) |
| DE (1) | DE2541907C3 (xx) |
| FR (1) | FR2325198A1 (xx) |
| GB (1) | GB1559873A (xx) |
| IT (1) | IT1070809B (xx) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3766446A (en) * | 1969-11-20 | 1973-10-16 | Kogyo Gijutsuin | Integrated circuits comprising lateral transistors and process for fabrication thereof |
-
1975
- 1975-09-19 DE DE19752541907 patent/DE2541907C3/de not_active Expired
-
1976
- 1976-08-02 GB GB3209576A patent/GB1559873A/en not_active Expired
- 1976-08-23 CH CH1065076A patent/CH610442A5/xx not_active IP Right Cessation
- 1976-09-13 FR FR7627473A patent/FR2325198A1/fr active Granted
- 1976-09-16 IT IT2724776A patent/IT1070809B/it active
- 1976-09-20 CA CA261,548A patent/CA1053380A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH610442A5 (en) | 1979-04-12 |
| FR2325198B1 (xx) | 1979-09-28 |
| CA1053380A (en) | 1979-04-24 |
| DE2541907A1 (de) | 1977-03-24 |
| GB1559873A (en) | 1980-01-30 |
| FR2325198A1 (fr) | 1977-04-15 |
| IT1070809B (it) | 1985-04-02 |
| DE2541907B2 (de) | 1978-03-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |