DE2532847C2 - Integrierte Schaltung mit Zenerdiodenkennlinie - Google Patents
Integrierte Schaltung mit ZenerdiodenkennlinieInfo
- Publication number
- DE2532847C2 DE2532847C2 DE2532847A DE2532847A DE2532847C2 DE 2532847 C2 DE2532847 C2 DE 2532847C2 DE 2532847 A DE2532847 A DE 2532847A DE 2532847 A DE2532847 A DE 2532847A DE 2532847 C2 DE2532847 C2 DE 2532847C2
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- integrated circuit
- zone
- transistor
- load transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000004071 soot Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2532847A DE2532847C2 (de) | 1975-07-23 | 1975-07-23 | Integrierte Schaltung mit Zenerdiodenkennlinie |
| US05/699,751 US4028563A (en) | 1975-07-23 | 1976-06-25 | Integrated zener diode |
| IT25243/76A IT1068569B (it) | 1975-07-23 | 1976-07-13 | Diodo zener del tipo integrato |
| FR7621826A FR2319200A1 (fr) | 1975-07-23 | 1976-07-16 | Diode zener integree |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2532847A DE2532847C2 (de) | 1975-07-23 | 1975-07-23 | Integrierte Schaltung mit Zenerdiodenkennlinie |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2532847A1 DE2532847A1 (de) | 1977-01-27 |
| DE2532847C2 true DE2532847C2 (de) | 1982-08-19 |
Family
ID=5952201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2532847A Expired DE2532847C2 (de) | 1975-07-23 | 1975-07-23 | Integrierte Schaltung mit Zenerdiodenkennlinie |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4028563A (enExample) |
| DE (1) | DE2532847C2 (enExample) |
| FR (1) | FR2319200A1 (enExample) |
| IT (1) | IT1068569B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4646427A (en) * | 1984-06-28 | 1987-03-03 | Motorola, Inc. | Method of electrically adjusting the zener knee of a lateral polysilicon zener diode |
| US4775643A (en) * | 1987-06-01 | 1988-10-04 | Motorola Inc. | Mesa zener diode and method of manufacture thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3482111A (en) * | 1966-03-04 | 1969-12-02 | Ncr Co | High speed logical circuit |
| DE1538440B2 (de) * | 1966-11-23 | 1972-03-16 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Schaltungsanordnung zur gleichspannungsstabilisierung nach art einer z diode |
| DE1614799A1 (de) * | 1967-04-08 | 1970-12-23 | Telefunken Patent | Halbleiteranordnung |
| DE1589707B2 (de) * | 1967-12-09 | 1971-02-04 | Deutsche ITT Industries GmbH 7800 Freiburg | Temperaturkompensierte Z Diodenanord nung |
| DE1638144A1 (de) * | 1968-01-18 | 1971-06-16 | Heinz Guenther | Schaltungsanordnung zur Nachbildung der Strom-Spannungscharakteristik einer Zenerdiode |
| US3633052A (en) * | 1970-05-13 | 1972-01-04 | Nat Semiconductor Corp | Low-noise integrated circuit zener voltage reference device including a multiple collector lateral transistor |
| DE2038983A1 (de) * | 1970-08-05 | 1972-02-10 | Siemens Ag | Elektrischer Zweipol |
| DE2325552C3 (de) * | 1973-05-19 | 1979-08-16 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Zweipolige monolithisch integrierte Schaltung mit Z-Diodenkennlinie |
| US3996115A (en) * | 1975-08-25 | 1976-12-07 | Joseph W. Aidlin | Process for forming an anodic oxide coating on metals |
-
1975
- 1975-07-23 DE DE2532847A patent/DE2532847C2/de not_active Expired
-
1976
- 1976-06-25 US US05/699,751 patent/US4028563A/en not_active Expired - Lifetime
- 1976-07-13 IT IT25243/76A patent/IT1068569B/it active
- 1976-07-16 FR FR7621826A patent/FR2319200A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2532847A1 (de) | 1977-01-27 |
| US4028563A (en) | 1977-06-07 |
| IT1068569B (it) | 1985-03-21 |
| FR2319200A1 (fr) | 1977-02-18 |
| FR2319200B1 (enExample) | 1983-06-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| D2 | Grant after examination | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |