IT1068569B - Diodo zener del tipo integrato - Google Patents

Diodo zener del tipo integrato

Info

Publication number
IT1068569B
IT1068569B IT25243/76A IT2524376A IT1068569B IT 1068569 B IT1068569 B IT 1068569B IT 25243/76 A IT25243/76 A IT 25243/76A IT 2524376 A IT2524376 A IT 2524376A IT 1068569 B IT1068569 B IT 1068569B
Authority
IT
Italy
Prior art keywords
zener diode
integrated type
type zener
integrated
diode
Prior art date
Application number
IT25243/76A
Other languages
English (en)
Italian (it)
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Application granted granted Critical
Publication of IT1068569B publication Critical patent/IT1068569B/it

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/20Breakdown diodes, e.g. avalanche diodes
    • H10D8/25Zener diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT25243/76A 1975-07-23 1976-07-13 Diodo zener del tipo integrato IT1068569B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2532847A DE2532847C2 (de) 1975-07-23 1975-07-23 Integrierte Schaltung mit Zenerdiodenkennlinie

Publications (1)

Publication Number Publication Date
IT1068569B true IT1068569B (it) 1985-03-21

Family

ID=5952201

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25243/76A IT1068569B (it) 1975-07-23 1976-07-13 Diodo zener del tipo integrato

Country Status (4)

Country Link
US (1) US4028563A (enExample)
DE (1) DE2532847C2 (enExample)
FR (1) FR2319200A1 (enExample)
IT (1) IT1068569B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
US4775643A (en) * 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
DE1538440B2 (de) * 1966-11-23 1972-03-16 Deutsche Itt Industries Gmbh, 7800 Freiburg Schaltungsanordnung zur gleichspannungsstabilisierung nach art einer z diode
DE1614799A1 (de) * 1967-04-08 1970-12-23 Telefunken Patent Halbleiteranordnung
DE1589707B2 (de) * 1967-12-09 1971-02-04 Deutsche ITT Industries GmbH 7800 Freiburg Temperaturkompensierte Z Diodenanord nung
DE1638144A1 (de) * 1968-01-18 1971-06-16 Heinz Guenther Schaltungsanordnung zur Nachbildung der Strom-Spannungscharakteristik einer Zenerdiode
US3633052A (en) * 1970-05-13 1972-01-04 Nat Semiconductor Corp Low-noise integrated circuit zener voltage reference device including a multiple collector lateral transistor
DE2038983A1 (de) * 1970-08-05 1972-02-10 Siemens Ag Elektrischer Zweipol
DE2325552C3 (de) * 1973-05-19 1979-08-16 Deutsche Itt Industries Gmbh, 7800 Freiburg Zweipolige monolithisch integrierte Schaltung mit Z-Diodenkennlinie
US3996115A (en) * 1975-08-25 1976-12-07 Joseph W. Aidlin Process for forming an anodic oxide coating on metals

Also Published As

Publication number Publication date
DE2532847A1 (de) 1977-01-27
US4028563A (en) 1977-06-07
FR2319200A1 (fr) 1977-02-18
FR2319200B1 (enExample) 1983-06-17
DE2532847C2 (de) 1982-08-19

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