FR2319200B1 - - Google Patents

Info

Publication number
FR2319200B1
FR2319200B1 FR7621826A FR7621826A FR2319200B1 FR 2319200 B1 FR2319200 B1 FR 2319200B1 FR 7621826 A FR7621826 A FR 7621826A FR 7621826 A FR7621826 A FR 7621826A FR 2319200 B1 FR2319200 B1 FR 2319200B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7621826A
Other languages
French (fr)
Other versions
FR2319200A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2319200A1 publication Critical patent/FR2319200A1/fr
Application granted granted Critical
Publication of FR2319200B1 publication Critical patent/FR2319200B1/fr
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/20Breakdown diodes, e.g. avalanche diodes
    • H10D8/25Zener diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7621826A 1975-07-23 1976-07-16 Diode zener integree Granted FR2319200A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2532847A DE2532847C2 (de) 1975-07-23 1975-07-23 Integrierte Schaltung mit Zenerdiodenkennlinie

Publications (2)

Publication Number Publication Date
FR2319200A1 FR2319200A1 (fr) 1977-02-18
FR2319200B1 true FR2319200B1 (enExample) 1983-06-17

Family

ID=5952201

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7621826A Granted FR2319200A1 (fr) 1975-07-23 1976-07-16 Diode zener integree

Country Status (4)

Country Link
US (1) US4028563A (enExample)
DE (1) DE2532847C2 (enExample)
FR (1) FR2319200A1 (enExample)
IT (1) IT1068569B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
US4775643A (en) * 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
DE1538440B2 (de) * 1966-11-23 1972-03-16 Deutsche Itt Industries Gmbh, 7800 Freiburg Schaltungsanordnung zur gleichspannungsstabilisierung nach art einer z diode
DE1614799A1 (de) * 1967-04-08 1970-12-23 Telefunken Patent Halbleiteranordnung
DE1589707B2 (de) * 1967-12-09 1971-02-04 Deutsche ITT Industries GmbH 7800 Freiburg Temperaturkompensierte Z Diodenanord nung
DE1638144A1 (de) * 1968-01-18 1971-06-16 Heinz Guenther Schaltungsanordnung zur Nachbildung der Strom-Spannungscharakteristik einer Zenerdiode
US3633052A (en) * 1970-05-13 1972-01-04 Nat Semiconductor Corp Low-noise integrated circuit zener voltage reference device including a multiple collector lateral transistor
DE2038983A1 (de) * 1970-08-05 1972-02-10 Siemens Ag Elektrischer Zweipol
DE2325552C3 (de) * 1973-05-19 1979-08-16 Deutsche Itt Industries Gmbh, 7800 Freiburg Zweipolige monolithisch integrierte Schaltung mit Z-Diodenkennlinie
US3996115A (en) * 1975-08-25 1976-12-07 Joseph W. Aidlin Process for forming an anodic oxide coating on metals

Also Published As

Publication number Publication date
DE2532847A1 (de) 1977-01-27
US4028563A (en) 1977-06-07
IT1068569B (it) 1985-03-21
FR2319200A1 (fr) 1977-02-18
DE2532847C2 (de) 1982-08-19

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Legal Events

Date Code Title Description
ST Notification of lapse