DE2518479A1 - Verfahren zur herstellung einer positiven resistmaske, die gegenueber einer strahlung hoher energie bestaendig ist - Google Patents

Verfahren zur herstellung einer positiven resistmaske, die gegenueber einer strahlung hoher energie bestaendig ist

Info

Publication number
DE2518479A1
DE2518479A1 DE19752518479 DE2518479A DE2518479A1 DE 2518479 A1 DE2518479 A1 DE 2518479A1 DE 19752518479 DE19752518479 DE 19752518479 DE 2518479 A DE2518479 A DE 2518479A DE 2518479 A1 DE2518479 A1 DE 2518479A1
Authority
DE
Germany
Prior art keywords
water
protective layer
developer
parts
methyl isobutyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19752518479
Other languages
German (de)
English (en)
Inventor
Charles A Cortellino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2518479A1 publication Critical patent/DE2518479A1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
DE19752518479 1974-05-28 1975-04-25 Verfahren zur herstellung einer positiven resistmaske, die gegenueber einer strahlung hoher energie bestaendig ist Pending DE2518479A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/473,603 US4078098A (en) 1974-05-28 1974-05-28 High energy radiation exposed positive resist mask process

Publications (1)

Publication Number Publication Date
DE2518479A1 true DE2518479A1 (de) 1975-12-11

Family

ID=23880244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752518479 Pending DE2518479A1 (de) 1974-05-28 1975-04-25 Verfahren zur herstellung einer positiven resistmaske, die gegenueber einer strahlung hoher energie bestaendig ist

Country Status (5)

Country Link
US (1) US4078098A (US20090163788A1-20090625-C00002.png)
JP (1) JPS512430A (US20090163788A1-20090625-C00002.png)
DE (1) DE2518479A1 (US20090163788A1-20090625-C00002.png)
FR (1) FR2273303B1 (US20090163788A1-20090625-C00002.png)
GB (1) GB1459170A (US20090163788A1-20090625-C00002.png)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381116A (en) * 1976-12-25 1978-07-18 Agency Of Ind Science & Technol Radiation sensitive polymer and its working method
JPS53123929A (en) * 1977-04-05 1978-10-28 Tokyo Ouka Kougiyou Kk Developing liquid for use in radiant ray positive type resist
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
JPS56101148A (en) * 1980-01-16 1981-08-13 Toshiba Corp Photoresist developing method
US4321317A (en) * 1980-04-28 1982-03-23 General Motors Corporation High resolution lithography system for microelectronic fabrication
NL8006947A (nl) * 1980-12-22 1982-07-16 Philips Nv Werkwijze voor de vervaardiging van een optisch uitleesbare informatiedrager.
CA1164261A (en) * 1981-04-21 1984-03-27 Tsukasa Tada PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS
US4410611A (en) * 1981-08-31 1983-10-18 General Motors Corporation Hard and adherent layers from organic resin coatings
US4608281A (en) * 1982-09-28 1986-08-26 Exxon Research And Engineering Co. Improvements in sensitivity of a positive polymer resist having a glass transition temperature through control of a molecular weight distribution and prebaked temperature
US4604305A (en) * 1982-09-28 1986-08-05 Exxon Research And Engineering Co. Improvements in contrast of a positive polymer resist having a glass transition temperature through control of the molecular weight distribution and prebaked temperature
JPS59181536A (ja) * 1983-03-31 1984-10-16 Oki Electric Ind Co Ltd レジストパタ−ンの形成方法
US4540636A (en) * 1983-12-27 1985-09-10 General Motors Corporation Metal bearing element with a score-resistant coating
JPH01177539A (ja) * 1988-01-07 1989-07-13 Matsushita Electron Corp レジストの現像方法
JPH0757867A (ja) * 1993-07-19 1995-03-03 Samsung Electron Co Ltd 誘導加熱調理器
JPH11289103A (ja) * 1998-02-05 1999-10-19 Canon Inc 半導体装置および太陽電池モジュ―ル及びその解体方法
US6436605B1 (en) 1999-07-12 2002-08-20 International Business Machines Corporation Plasma resistant composition and use thereof
EP3953767A4 (en) * 2019-04-12 2023-06-07 Inpria Corporation ORGANOMETALLIC PHOTORESIN DEVELOPER COMPOSITIONS AND METHODS OF TREATMENT

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892712A (en) * 1954-04-23 1959-06-30 Du Pont Process for preparing relief images
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3770433A (en) * 1972-03-22 1973-11-06 Bell Telephone Labor Inc High sensitivity negative electron resist
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist

Also Published As

Publication number Publication date
US4078098A (en) 1978-03-07
JPS512430A (en) 1976-01-10
GB1459170A (en) 1976-12-22
FR2273303A1 (US20090163788A1-20090625-C00002.png) 1975-12-26
FR2273303B1 (US20090163788A1-20090625-C00002.png) 1977-04-15

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