DE2514466B2 - Integrierte halbleiterschaltung - Google Patents

Integrierte halbleiterschaltung

Info

Publication number
DE2514466B2
DE2514466B2 DE19752514466 DE2514466A DE2514466B2 DE 2514466 B2 DE2514466 B2 DE 2514466B2 DE 19752514466 DE19752514466 DE 19752514466 DE 2514466 A DE2514466 A DE 2514466A DE 2514466 B2 DE2514466 B2 DE 2514466B2
Authority
DE
Germany
Prior art keywords
substrate
zone
voltage
transistor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19752514466
Other languages
German (de)
English (en)
Other versions
DE2514466A1 (de
Inventor
Klaus Dipl.-Ing. 7030 Böblingen; Najmann Knut Dipl.-Ing. 7031 Gärtringen; Remshardt Rolf Dipl.-Ing. Dr. 7030 Böblingen; Tertel Klaus 7031 Altdorf Heuber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Priority to DE19752514466 priority Critical patent/DE2514466B2/de
Priority to US05/642,434 priority patent/US4024417A/en
Priority to FR7605141A priority patent/FR2313777A1/fr
Priority to IT20748/76A priority patent/IT1056804B/it
Priority to JP51030930A priority patent/JPS51123083A/ja
Publication of DE2514466A1 publication Critical patent/DE2514466A1/de
Publication of DE2514466B2 publication Critical patent/DE2514466B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/311—Design considerations for internal polarisation in bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19752514466 1975-04-03 1975-04-03 Integrierte halbleiterschaltung Ceased DE2514466B2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19752514466 DE2514466B2 (de) 1975-04-03 1975-04-03 Integrierte halbleiterschaltung
US05/642,434 US4024417A (en) 1975-04-03 1975-12-19 Integrated semiconductor structure with means to prevent unlimited current flow
FR7605141A FR2313777A1 (fr) 1975-04-03 1976-02-17 Agencement semi-conducteur integre
IT20748/76A IT1056804B (it) 1975-04-03 1976-03-02 Struttura semiconduttrice a circutto intergrato
JP51030930A JPS51123083A (en) 1975-04-03 1976-03-23 Integrated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752514466 DE2514466B2 (de) 1975-04-03 1975-04-03 Integrierte halbleiterschaltung

Publications (2)

Publication Number Publication Date
DE2514466A1 DE2514466A1 (de) 1976-10-14
DE2514466B2 true DE2514466B2 (de) 1977-04-21

Family

ID=5942969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752514466 Ceased DE2514466B2 (de) 1975-04-03 1975-04-03 Integrierte halbleiterschaltung

Country Status (5)

Country Link
US (1) US4024417A (enExample)
JP (1) JPS51123083A (enExample)
DE (1) DE2514466B2 (enExample)
FR (1) FR2313777A1 (enExample)
IT (1) IT1056804B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148491A (en) * 1978-05-15 1979-11-20 Nec Corp Semiconductor integrated circuit
US4223238A (en) * 1978-08-17 1980-09-16 Motorola, Inc. Integrated circuit substrate charge pump
US4298334A (en) * 1979-11-26 1981-11-03 Honeywell Inc. Dynamically checked safety load switching circuit
JPS5852315U (ja) * 1981-10-06 1983-04-09 日立建機株式会社 ピン結合装置
JPS58127363A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体集積回路装置
EP0109996B1 (fr) * 1982-11-26 1987-06-03 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
US4562454A (en) * 1983-12-29 1985-12-31 Motorola, Inc. Electronic fuse for semiconductor devices
US4581547A (en) * 1984-02-22 1986-04-08 Motorola, Inc. Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate
US4577211A (en) * 1984-04-02 1986-03-18 Motorola, Inc. Integrated circuit and method for biasing an epitaxial layer
JPS61127165A (ja) * 1984-11-24 1986-06-14 Sharp Corp 半導体装置
FR2613131B1 (fr) * 1987-03-27 1989-07-28 Thomson Csf Circuit integre protege contre des surtensions
FR2655196B1 (fr) * 1989-11-29 1992-04-10 Sgs Thomson Microelectronics Circuit d'isolation dynamique de circuits integres.
US5428297A (en) * 1993-06-15 1995-06-27 Grace; James W. Precision integrated resistors
US5495123A (en) * 1994-10-31 1996-02-27 Sgs-Thomson Microelectronics, Inc. Structure to protect against below ground current injection
US5834826A (en) * 1997-05-08 1998-11-10 Stmicroelectronics, Inc. Protection against adverse parasitic effects in junction-isolated integrated circuits
US6839211B2 (en) * 2002-02-21 2005-01-04 Broadcom Corporation Methods and systems for reducing power-on failure of integrated circuits
US20040036131A1 (en) * 2002-08-23 2004-02-26 Micron Technology, Inc. Electrostatic discharge protection devices having transistors with textured surfaces
US8384157B2 (en) * 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA886210A (en) * 1971-11-16 Northern Electric Company Limited High-low voltage detector
US3541357A (en) * 1968-04-29 1970-11-17 Gen Electric Integrated circuit for alternating current operation
US3725675A (en) * 1971-03-29 1973-04-03 Honeywell Inf Systems Power sequencing control circuit
GB1405503A (en) * 1972-11-16 1975-09-10 Texas Instruments Inc Integrated circuits
US3860461A (en) * 1973-05-29 1975-01-14 Texas Instruments Inc Method for fabricating semiconductor devices utilizing composite masking

Also Published As

Publication number Publication date
FR2313777A1 (fr) 1976-12-31
JPS5346702B2 (enExample) 1978-12-15
JPS51123083A (en) 1976-10-27
DE2514466A1 (de) 1976-10-14
US4024417A (en) 1977-05-17
FR2313777B1 (enExample) 1979-02-02
IT1056804B (it) 1982-02-20

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Legal Events

Date Code Title Description
8235 Patent refused