JPS5346702B2 - - Google Patents
Info
- Publication number
- JPS5346702B2 JPS5346702B2 JP3093076A JP3093076A JPS5346702B2 JP S5346702 B2 JPS5346702 B2 JP S5346702B2 JP 3093076 A JP3093076 A JP 3093076A JP 3093076 A JP3093076 A JP 3093076A JP S5346702 B2 JPS5346702 B2 JP S5346702B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/311—Design considerations for internal polarisation in bipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
Landscapes
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752514466 DE2514466B2 (de) | 1975-04-03 | 1975-04-03 | Integrierte halbleiterschaltung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51123083A JPS51123083A (en) | 1976-10-27 |
| JPS5346702B2 true JPS5346702B2 (enExample) | 1978-12-15 |
Family
ID=5942969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51030930A Granted JPS51123083A (en) | 1975-04-03 | 1976-03-23 | Integrated semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4024417A (enExample) |
| JP (1) | JPS51123083A (enExample) |
| DE (1) | DE2514466B2 (enExample) |
| FR (1) | FR2313777A1 (enExample) |
| IT (1) | IT1056804B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5852315U (ja) * | 1981-10-06 | 1983-04-09 | 日立建機株式会社 | ピン結合装置 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54148491A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Semiconductor integrated circuit |
| US4223238A (en) * | 1978-08-17 | 1980-09-16 | Motorola, Inc. | Integrated circuit substrate charge pump |
| US4298334A (en) * | 1979-11-26 | 1981-11-03 | Honeywell Inc. | Dynamically checked safety load switching circuit |
| JPS58127363A (ja) * | 1982-01-25 | 1983-07-29 | Hitachi Ltd | 半導体集積回路装置 |
| EP0109996B1 (fr) * | 1982-11-26 | 1987-06-03 | International Business Machines Corporation | Structure de résistance autopolarisée et application à la réalisation de circuits d'interface |
| US4562454A (en) * | 1983-12-29 | 1985-12-31 | Motorola, Inc. | Electronic fuse for semiconductor devices |
| US4581547A (en) * | 1984-02-22 | 1986-04-08 | Motorola, Inc. | Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate |
| US4577211A (en) * | 1984-04-02 | 1986-03-18 | Motorola, Inc. | Integrated circuit and method for biasing an epitaxial layer |
| JPS61127165A (ja) * | 1984-11-24 | 1986-06-14 | Sharp Corp | 半導体装置 |
| FR2613131B1 (fr) * | 1987-03-27 | 1989-07-28 | Thomson Csf | Circuit integre protege contre des surtensions |
| FR2655196B1 (fr) * | 1989-11-29 | 1992-04-10 | Sgs Thomson Microelectronics | Circuit d'isolation dynamique de circuits integres. |
| US5428297A (en) * | 1993-06-15 | 1995-06-27 | Grace; James W. | Precision integrated resistors |
| US5495123A (en) * | 1994-10-31 | 1996-02-27 | Sgs-Thomson Microelectronics, Inc. | Structure to protect against below ground current injection |
| US5834826A (en) * | 1997-05-08 | 1998-11-10 | Stmicroelectronics, Inc. | Protection against adverse parasitic effects in junction-isolated integrated circuits |
| US6839211B2 (en) * | 2002-02-21 | 2005-01-04 | Broadcom Corporation | Methods and systems for reducing power-on failure of integrated circuits |
| US20040036131A1 (en) * | 2002-08-23 | 2004-02-26 | Micron Technology, Inc. | Electrostatic discharge protection devices having transistors with textured surfaces |
| US8384157B2 (en) * | 2006-05-10 | 2013-02-26 | International Rectifier Corporation | High ohmic integrated resistor with improved linearity |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA886210A (en) * | 1971-11-16 | Northern Electric Company Limited | High-low voltage detector | |
| US3541357A (en) * | 1968-04-29 | 1970-11-17 | Gen Electric | Integrated circuit for alternating current operation |
| US3725675A (en) * | 1971-03-29 | 1973-04-03 | Honeywell Inf Systems | Power sequencing control circuit |
| GB1405503A (en) * | 1972-11-16 | 1975-09-10 | Texas Instruments Inc | Integrated circuits |
| US3860461A (en) * | 1973-05-29 | 1975-01-14 | Texas Instruments Inc | Method for fabricating semiconductor devices utilizing composite masking |
-
1975
- 1975-04-03 DE DE19752514466 patent/DE2514466B2/de not_active Ceased
- 1975-12-19 US US05/642,434 patent/US4024417A/en not_active Expired - Lifetime
-
1976
- 1976-02-17 FR FR7605141A patent/FR2313777A1/fr active Granted
- 1976-03-02 IT IT20748/76A patent/IT1056804B/it active
- 1976-03-23 JP JP51030930A patent/JPS51123083A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5852315U (ja) * | 1981-10-06 | 1983-04-09 | 日立建機株式会社 | ピン結合装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2313777A1 (fr) | 1976-12-31 |
| JPS51123083A (en) | 1976-10-27 |
| DE2514466A1 (de) | 1976-10-14 |
| US4024417A (en) | 1977-05-17 |
| DE2514466B2 (de) | 1977-04-21 |
| FR2313777B1 (enExample) | 1979-02-02 |
| IT1056804B (it) | 1982-02-20 |