FR2313777A1 - Agencement semi-conducteur integre - Google Patents

Agencement semi-conducteur integre

Info

Publication number
FR2313777A1
FR2313777A1 FR7605141A FR7605141A FR2313777A1 FR 2313777 A1 FR2313777 A1 FR 2313777A1 FR 7605141 A FR7605141 A FR 7605141A FR 7605141 A FR7605141 A FR 7605141A FR 2313777 A1 FR2313777 A1 FR 2313777A1
Authority
FR
France
Prior art keywords
integrated semiconductor
semiconductor layout
layout
integrated
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7605141A
Other languages
English (en)
French (fr)
Other versions
FR2313777B1 (enExample
Inventor
Klaus Heuber
Knut Najman
Rolf Dr Remshardt
Klaus Tertel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2313777A1 publication Critical patent/FR2313777A1/fr
Application granted granted Critical
Publication of FR2313777B1 publication Critical patent/FR2313777B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/311—Design considerations for internal polarisation in bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
FR7605141A 1975-04-03 1976-02-17 Agencement semi-conducteur integre Granted FR2313777A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752514466 DE2514466B2 (de) 1975-04-03 1975-04-03 Integrierte halbleiterschaltung

Publications (2)

Publication Number Publication Date
FR2313777A1 true FR2313777A1 (fr) 1976-12-31
FR2313777B1 FR2313777B1 (enExample) 1979-02-02

Family

ID=5942969

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7605141A Granted FR2313777A1 (fr) 1975-04-03 1976-02-17 Agencement semi-conducteur integre

Country Status (5)

Country Link
US (1) US4024417A (enExample)
JP (1) JPS51123083A (enExample)
DE (1) DE2514466B2 (enExample)
FR (1) FR2313777A1 (enExample)
IT (1) IT1056804B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3302206A1 (de) * 1982-01-25 1983-08-04 Hitachi, Ltd., Tokyo Integrierte halbleiterschaltung

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148491A (en) * 1978-05-15 1979-11-20 Nec Corp Semiconductor integrated circuit
US4223238A (en) * 1978-08-17 1980-09-16 Motorola, Inc. Integrated circuit substrate charge pump
US4298334A (en) * 1979-11-26 1981-11-03 Honeywell Inc. Dynamically checked safety load switching circuit
JPS5852315U (ja) * 1981-10-06 1983-04-09 日立建機株式会社 ピン結合装置
EP0109996B1 (fr) * 1982-11-26 1987-06-03 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
US4562454A (en) * 1983-12-29 1985-12-31 Motorola, Inc. Electronic fuse for semiconductor devices
US4581547A (en) * 1984-02-22 1986-04-08 Motorola, Inc. Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate
US4577211A (en) * 1984-04-02 1986-03-18 Motorola, Inc. Integrated circuit and method for biasing an epitaxial layer
JPS61127165A (ja) * 1984-11-24 1986-06-14 Sharp Corp 半導体装置
FR2613131B1 (fr) * 1987-03-27 1989-07-28 Thomson Csf Circuit integre protege contre des surtensions
FR2655196B1 (fr) * 1989-11-29 1992-04-10 Sgs Thomson Microelectronics Circuit d'isolation dynamique de circuits integres.
US5428297A (en) * 1993-06-15 1995-06-27 Grace; James W. Precision integrated resistors
US5495123A (en) * 1994-10-31 1996-02-27 Sgs-Thomson Microelectronics, Inc. Structure to protect against below ground current injection
US5834826A (en) * 1997-05-08 1998-11-10 Stmicroelectronics, Inc. Protection against adverse parasitic effects in junction-isolated integrated circuits
US6839211B2 (en) * 2002-02-21 2005-01-04 Broadcom Corporation Methods and systems for reducing power-on failure of integrated circuits
US20040036131A1 (en) * 2002-08-23 2004-02-26 Micron Technology, Inc. Electrostatic discharge protection devices having transistors with textured surfaces
US8384157B2 (en) * 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2217809A1 (enExample) * 1972-11-16 1974-09-06 Texas Instruments Inc

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA886210A (en) * 1971-11-16 Northern Electric Company Limited High-low voltage detector
US3541357A (en) * 1968-04-29 1970-11-17 Gen Electric Integrated circuit for alternating current operation
US3725675A (en) * 1971-03-29 1973-04-03 Honeywell Inf Systems Power sequencing control circuit
US3860461A (en) * 1973-05-29 1975-01-14 Texas Instruments Inc Method for fabricating semiconductor devices utilizing composite masking

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2217809A1 (enExample) * 1972-11-16 1974-09-06 Texas Instruments Inc

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3302206A1 (de) * 1982-01-25 1983-08-04 Hitachi, Ltd., Tokyo Integrierte halbleiterschaltung

Also Published As

Publication number Publication date
JPS5346702B2 (enExample) 1978-12-15
JPS51123083A (en) 1976-10-27
DE2514466A1 (de) 1976-10-14
US4024417A (en) 1977-05-17
DE2514466B2 (de) 1977-04-21
FR2313777B1 (enExample) 1979-02-02
IT1056804B (it) 1982-02-20

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Legal Events

Date Code Title Description
ST Notification of lapse