DE2509100A1 - Verfahren zum herstellen einer halbleiteranordnung - Google Patents

Verfahren zum herstellen einer halbleiteranordnung

Info

Publication number
DE2509100A1
DE2509100A1 DE19752509100 DE2509100A DE2509100A1 DE 2509100 A1 DE2509100 A1 DE 2509100A1 DE 19752509100 DE19752509100 DE 19752509100 DE 2509100 A DE2509100 A DE 2509100A DE 2509100 A1 DE2509100 A1 DE 2509100A1
Authority
DE
Germany
Prior art keywords
semiconductor body
carrier element
layer
semiconductor
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19752509100
Other languages
German (de)
English (en)
Inventor
Leslie Charles Davis
Peter Robert Ivett
Christopher Tooth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2509100A1 publication Critical patent/DE2509100A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)
DE19752509100 1974-03-04 1975-03-03 Verfahren zum herstellen einer halbleiteranordnung Pending DE2509100A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB968974A GB1457806A (en) 1974-03-04 1974-03-04 Semiconductor device manufacture

Publications (1)

Publication Number Publication Date
DE2509100A1 true DE2509100A1 (de) 1975-09-11

Family

ID=9876868

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752509100 Pending DE2509100A1 (de) 1974-03-04 1975-03-03 Verfahren zum herstellen einer halbleiteranordnung

Country Status (5)

Country Link
US (1) US4023725A (enExample)
JP (1) JPS50126173A (enExample)
DE (1) DE2509100A1 (enExample)
FR (1) FR2263604B1 (enExample)
GB (1) GB1457806A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3499553A1 (de) * 2017-12-13 2019-06-19 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung eines mit einer lotvorform verbundenen bauelements mittels heisspressens unterhalb der schmelztemperatur des lotmaterials

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US4293587A (en) * 1978-11-09 1981-10-06 Zilog, Inc. Low resistance backside preparation for semiconductor integrated circuit chips
DE3070263D1 (en) * 1979-03-08 1985-04-18 Gen Electric Thermo-compression bonding a semiconductor to strain buffer
WO1982002457A1 (en) * 1980-12-30 1982-07-22 Finn John B Die attachment exhibiting enhanced quality and reliability
US4546409A (en) * 1982-04-02 1985-10-08 Mitsubishi Denki Kabushiki Kaisha Device for cooling semiconductor elements
US4513905A (en) * 1983-07-29 1985-04-30 The Perkin-Elmer Corporation Integrated circuit metallization technique
IT1213144B (it) * 1984-02-23 1989-12-14 Ates Componenti Elettron Processo per la saldatura di piastrine di materiale semiconduttore ad un supporto metallico nell'assemblaggio automatico di dispositivi a semiconduttore.
GB2156153B (en) * 1984-03-21 1988-02-24 Pitney Bowes Inc Alignment process for semiconductor chips
FR2610765B1 (fr) * 1987-02-11 1989-02-17 Alcatel Thomson Faisceaux Filtre hyperfrequence accordable
NL8801439A (nl) * 1988-06-06 1990-01-02 Philips Nv Werkwijze voor het verbinden van een metaaloxide met een metaal.
US5225711A (en) * 1988-12-23 1993-07-06 International Business Machines Corporation Palladium enhanced soldering and bonding of semiconductor device contacts
US5048744A (en) * 1988-12-23 1991-09-17 International Business Machines Corporation Palladium enhanced fluxless soldering and bonding of semiconductor device contacts
US4996116A (en) * 1989-12-21 1991-02-26 General Electric Company Enhanced direct bond structure
US5023697A (en) * 1990-01-10 1991-06-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with copper wire ball bonding
JPH03208355A (ja) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5027997A (en) * 1990-04-05 1991-07-02 Hughes Aircraft Company Silicon chip metallization system
US5198695A (en) * 1990-12-10 1993-03-30 Westinghouse Electric Corp. Semiconductor wafer with circuits bonded to a substrate
DE4107660C2 (de) * 1991-03-09 1995-05-04 Bosch Gmbh Robert Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen
US6523560B1 (en) 1998-09-03 2003-02-25 General Electric Corporation Microvalve with pressure equalization
EP1117937B1 (en) 1998-09-03 2008-04-23 Ge Novasensor, Inc. Proportional micromechanical device
US7011378B2 (en) * 1998-09-03 2006-03-14 Ge Novasensor, Inc. Proportional micromechanical valve
US6845962B1 (en) * 2000-03-22 2005-01-25 Kelsey-Hayes Company Thermally actuated microvalve device
US6505811B1 (en) 2000-06-27 2003-01-14 Kelsey-Hayes Company High-pressure fluid control valve assembly having a microvalve device attached to fluid distributing substrate
JP2003209144A (ja) * 2002-01-16 2003-07-25 Seiko Epson Corp 半導体装置及びその製造方法、半導体装置の製造装置並びに電子機器
EP1694990A4 (en) * 2003-11-24 2009-12-09 Microstaq Inc MICRO-VALVE DEVICE FOR CONTROLLING A VARIABLE DISPLACEMENT COMPRESSOR
US20070251586A1 (en) * 2003-11-24 2007-11-01 Fuller Edward N Electro-pneumatic control valve with microvalve pilot
US8011388B2 (en) * 2003-11-24 2011-09-06 Microstaq, INC Thermally actuated microvalve with multiple fluid ports
CN100501212C (zh) * 2004-02-27 2009-06-17 铝微有限公司 微阀装置
EP1732653A2 (en) * 2004-03-05 2006-12-20 Alumina Micro LLC Selective bonding for forming a microvalve
US7156365B2 (en) * 2004-07-27 2007-01-02 Kelsey-Hayes Company Method of controlling microvalve actuator
US20060038302A1 (en) * 2004-08-19 2006-02-23 Kejun Zeng Thermal fatigue resistant tin-lead-silver solder
KR20070092328A (ko) * 2005-01-14 2007-09-12 알루미나 마이크로 엘엘씨 가변용량형 압축기를 제어하기 위한 시스템 및 방법
US8156962B2 (en) 2006-12-15 2012-04-17 Dunan Microstaq, Inc. Microvalve device
WO2008121369A1 (en) 2007-03-30 2008-10-09 Microstaq, Inc. Pilot operated micro spool valve
CN101668973B (zh) 2007-03-31 2013-03-13 盾安美斯泰克公司(美国) 先导式滑阀
US8662468B2 (en) * 2008-08-09 2014-03-04 Dunan Microstaq, Inc. Microvalve device
US8113482B2 (en) * 2008-08-12 2012-02-14 DunAn Microstaq Microvalve device with improved fluid routing
US8540207B2 (en) 2008-12-06 2013-09-24 Dunan Microstaq, Inc. Fluid flow control assembly
WO2010117874A2 (en) 2009-04-05 2010-10-14 Microstaq, Inc. Method and structure for optimizing heat exchanger performance
WO2011022267A2 (en) 2009-08-17 2011-02-24 Microstaq, Inc. Micromachined device and control method
WO2011094300A2 (en) 2010-01-28 2011-08-04 Microstaq, Inc. Process and structure for high temperature selective fusion bonding
WO2011094302A2 (en) 2010-01-28 2011-08-04 Microstaq, Inc. Process for reconditioning semiconductor surface to facilitate bonding
US8996141B1 (en) 2010-08-26 2015-03-31 Dunan Microstaq, Inc. Adaptive predictive functional controller
US8925793B2 (en) 2012-01-05 2015-01-06 Dunan Microstaq, Inc. Method for making a solder joint
US9140613B2 (en) 2012-03-16 2015-09-22 Zhejiang Dunan Hetian Metal Co., Ltd. Superheat sensor
US9188375B2 (en) 2013-12-04 2015-11-17 Zhejiang Dunan Hetian Metal Co., Ltd. Control element and check valve assembly

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3339267A (en) * 1962-12-26 1967-09-05 Philips Corp Metallizing non-metals

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3499553A1 (de) * 2017-12-13 2019-06-19 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung eines mit einer lotvorform verbundenen bauelements mittels heisspressens unterhalb der schmelztemperatur des lotmaterials
WO2019115077A1 (de) * 2017-12-13 2019-06-20 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung eines mit einer lotvorform verbundenen bauelements

Also Published As

Publication number Publication date
JPS50126173A (enExample) 1975-10-03
GB1457806A (en) 1976-12-08
US4023725A (en) 1977-05-17
FR2263604A1 (enExample) 1975-10-03
FR2263604B1 (enExample) 1978-08-18

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