DE2501187C2 - Entschichtungsmittel und dessen Verwendung - Google Patents

Entschichtungsmittel und dessen Verwendung

Info

Publication number
DE2501187C2
DE2501187C2 DE2501187A DE2501187A DE2501187C2 DE 2501187 C2 DE2501187 C2 DE 2501187C2 DE 2501187 A DE2501187 A DE 2501187A DE 2501187 A DE2501187 A DE 2501187A DE 2501187 C2 DE2501187 C2 DE 2501187C2
Authority
DE
Germany
Prior art keywords
acid
phenol
photoresist
agents
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2501187A
Other languages
German (de)
English (en)
Other versions
DE2501187A1 (de
Inventor
Frank Joseph Jordan N.Y. Kremers
William Russell Hawley Pa. Schevey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Allied Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Allied Corp filed Critical Allied Corp
Publication of DE2501187A1 publication Critical patent/DE2501187A1/de
Application granted granted Critical
Publication of DE2501187C2 publication Critical patent/DE2501187C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00—Chemical paint or ink removers
    • C09D9/005—Chemical paint or ink removers containing organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE2501187A 1974-01-30 1975-01-14 Entschichtungsmittel und dessen Verwendung Expired DE2501187C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US438127A US3871929A (en) 1974-01-30 1974-01-30 Polymeric etch resist strippers and method of using same

Publications (2)

Publication Number Publication Date
DE2501187A1 DE2501187A1 (de) 1975-07-31
DE2501187C2 true DE2501187C2 (de) 1984-04-19

Family

ID=23739341

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2501187A Expired DE2501187C2 (de) 1974-01-30 1975-01-14 Entschichtungsmittel und dessen Verwendung

Country Status (10)

Country Link
US (1) US3871929A (online.php)
JP (1) JPS5852578B2 (online.php)
AU (1) AU7687074A (online.php)
CA (1) CA1024867A (online.php)
DE (1) DE2501187C2 (online.php)
FR (1) FR2259128B3 (online.php)
GB (1) GB1485545A (online.php)
HK (1) HK33378A (online.php)
IT (1) IT1027234B (online.php)
MY (1) MY8100095A (online.php)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2447225C2 (de) * 1974-10-03 1983-12-22 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Ablösen von positiven Photolack
JPS5241002A (en) * 1975-09-29 1977-03-30 Chubu Rika Kk Regeneration method of ps plate material and regenerated plate
US4042387A (en) * 1976-05-05 1977-08-16 Rockwell International Corp Photolithographic method of making microcircuits using glycerine in photoresist stripping solution
US4169068A (en) * 1976-08-20 1979-09-25 Japan Synthetic Rubber Company Limited Stripping liquor composition for removing photoresists comprising hydrogen peroxide
US4140572A (en) * 1976-09-07 1979-02-20 General Electric Company Process for selective etching of polymeric materials embodying silicones therein
US4165295A (en) * 1976-10-04 1979-08-21 Allied Chemical Corporation Organic stripping compositions and method for using same
US4078102A (en) * 1976-10-29 1978-03-07 International Business Machines Corporation Process for stripping resist layers from substrates
US4165294A (en) * 1976-11-08 1979-08-21 Allied Chemical Corporation Phenol-free and chlorinated hydrocarbon-free photoresist stripper comprising surfactant and hydrotropic aromatic sulfonic acids
US4242218A (en) * 1976-11-08 1980-12-30 Allied Chemical Corporation Phenol-free photoresist stripper
US4215005A (en) * 1978-01-30 1980-07-29 Allied Chemical Corporation Organic stripping compositions and method for using same
US4187191A (en) * 1978-07-26 1980-02-05 General Motors Corporation Photoresist stripper with dodecylsulfonic acid and chlorinated solvents
US4386175A (en) * 1979-02-08 1983-05-31 Kokoku Rubber Industrial Company Limited Resin composition
FR2455075A1 (fr) * 1979-04-24 1980-11-21 Rhone Poulenc Ind Composition a base de solvants chlores pour l'elimination de resines photoresistantes
US4345022A (en) * 1979-11-13 1982-08-17 Matrix Unlimited, Inc. Process of recovering unpolymerized photopolymer from printing plates
JPS58204100A (ja) * 1982-05-24 1983-11-28 ダイキン工業株式会社 表面清浄化用組成物
US4608086A (en) * 1983-01-19 1986-08-26 Tennant Company Membrane remover/etchant
US4469525A (en) * 1983-01-19 1984-09-04 Tennant Company Membrane remover/etchant
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
JPS6235357A (ja) * 1985-08-09 1987-02-16 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
US4971715A (en) * 1988-11-18 1990-11-20 International Business Machines Corporation Phenolic-free stripping composition and use thereof
US5417802A (en) * 1994-03-18 1995-05-23 At&T Corp. Integrated circuit manufacturing
US5728664A (en) * 1996-04-15 1998-03-17 Ashland, Inc. Photoresist stripping compositions
US6348100B1 (en) * 1999-07-01 2002-02-19 International Business Machines Corporation Resist bowl cleaning
US6403286B1 (en) 1999-11-04 2002-06-11 Corning Incorporated High aspect ratio patterning of glass film
US6422246B1 (en) * 2000-02-29 2002-07-23 United Microelectronics Corp. Method removing residual photoresist
US6475292B1 (en) 2000-07-31 2002-11-05 Shipley Company, L.L.C. Photoresist stripping method
CN102905690B (zh) 2010-05-21 2016-03-30 西门子医疗保健诊断公司 两性离子试剂

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582401A (en) * 1967-11-15 1971-06-01 Mallinckrodt Chemical Works Photosensitive resist remover compositions and methods
US3813309A (en) * 1969-12-23 1974-05-28 Ibm Method for stripping resists from substrates
FR2109127A5 (en) * 1970-10-02 1972-05-26 Radiotechnique Compelec Solvent for photopolymerised acrylics -used eg in printed - circuit mfr contains methylene chloride and phenolics in emulsion

Also Published As

Publication number Publication date
CA1024867A (en) 1978-01-24
FR2259128A1 (online.php) 1975-08-22
US3871929A (en) 1975-03-18
DE2501187A1 (de) 1975-07-31
JPS5852578B2 (ja) 1983-11-24
AU7687074A (en) 1976-06-24
MY8100095A (en) 1981-12-31
HK33378A (en) 1978-07-07
FR2259128B3 (online.php) 1977-09-16
IT1027234B (it) 1978-11-20
GB1485545A (en) 1977-09-14
JPS50109730A (online.php) 1975-08-29

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: ALLIED CORP., MORRIS TOWNSHIP, N.J., US

8128 New person/name/address of the agent

Representative=s name: WEBER, D., DIPL.-CHEM. DR.RER.NAT. SEIFFERT, K., D

D2 Grant after examination
8364 No opposition during term of opposition