DE2444107A1 - Verfahren zum eindiffundieren von fremdstoffen in nitrid-halbleiterkristalle - Google Patents

Verfahren zum eindiffundieren von fremdstoffen in nitrid-halbleiterkristalle

Info

Publication number
DE2444107A1
DE2444107A1 DE2444107A DE2444107A DE2444107A1 DE 2444107 A1 DE2444107 A1 DE 2444107A1 DE 2444107 A DE2444107 A DE 2444107A DE 2444107 A DE2444107 A DE 2444107A DE 2444107 A1 DE2444107 A1 DE 2444107A1
Authority
DE
Germany
Prior art keywords
dopant
nitride
temperature
heated
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2444107A
Other languages
German (de)
English (en)
Inventor
Jacques Isaac Pankove
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2444107A1 publication Critical patent/DE2444107A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • C30B31/185—Pattern diffusion, e.g. by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
DE2444107A 1973-09-24 1974-09-14 Verfahren zum eindiffundieren von fremdstoffen in nitrid-halbleiterkristalle Pending DE2444107A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US399822A US3865655A (en) 1973-09-24 1973-09-24 Method for diffusing impurities into nitride semiconductor crystals

Publications (1)

Publication Number Publication Date
DE2444107A1 true DE2444107A1 (de) 1975-04-03

Family

ID=23581095

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2444107A Pending DE2444107A1 (de) 1973-09-24 1974-09-14 Verfahren zum eindiffundieren von fremdstoffen in nitrid-halbleiterkristalle

Country Status (9)

Country Link
US (1) US3865655A (OSRAM)
JP (1) JPS5144381B2 (OSRAM)
CA (1) CA1037840A (OSRAM)
CH (1) CH595134A5 (OSRAM)
DE (1) DE2444107A1 (OSRAM)
FR (1) FR2245082B1 (OSRAM)
GB (1) GB1473400A (OSRAM)
IT (1) IT1020224B (OSRAM)
NL (1) NL7412533A (OSRAM)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102715A (en) * 1975-12-19 1978-07-25 Matsushita Electric Industrial Co., Ltd. Method for diffusing an impurity into a semiconductor body
FR2361744A1 (fr) * 1976-08-10 1978-03-10 Ibm Procede pour l'obtention d'une conductivite de type p dans un materiau semi-conducteur auto-compense et dispositifs semi-conducteurs en resultant
DE2738329A1 (de) * 1976-09-06 1978-03-09 Philips Nv Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung
US4095331A (en) * 1976-11-04 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of an epitaxial layer diode in aluminum nitride on sapphire
SU773795A1 (ru) * 1977-04-01 1980-10-23 Предприятие П/Я А-1172 Светоизлучающий прибор
EP0979883A4 (en) * 1997-12-25 2003-10-15 Japan Energy Corp METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS OF COMPOSITE SEMICONDUCTORS AND SINGLE CRYSTALS OF COMPOSITE SEMICONDUCTORS
US6660083B2 (en) * 2001-03-30 2003-12-09 Technologies And Devices International, Inc. Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US20060011135A1 (en) * 2001-07-06 2006-01-19 Dmitriev Vladimir A HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
US6936357B2 (en) * 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US20070032046A1 (en) * 2001-07-06 2007-02-08 Dmitriev Vladimir A Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US8647435B1 (en) 2006-10-11 2014-02-11 Ostendo Technologies, Inc. HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
DE102007017080A1 (de) 2007-04-10 2008-10-16 Basf Se Verfahren zur Beschickung eines Längsabschnitts eines Kontaktrohres

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3540952A (en) * 1968-01-02 1970-11-17 Gen Electric Process for fabricating semiconductor laser diodes
US3554818A (en) * 1968-04-25 1971-01-12 Avco Corp Indium antimonide infrared detector and process for making the same
US3592704A (en) * 1968-06-28 1971-07-13 Bell Telephone Labor Inc Electroluminescent device
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
US3683240A (en) * 1971-07-22 1972-08-08 Rca Corp ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN
US3764414A (en) * 1972-05-01 1973-10-09 Ibm Open tube diffusion in iii-v compunds

Also Published As

Publication number Publication date
NL7412533A (nl) 1975-03-26
FR2245082B1 (OSRAM) 1979-03-16
US3865655A (en) 1975-02-11
GB1473400A (en) 1977-05-11
CA1037840A (en) 1978-09-05
IT1020224B (it) 1977-12-20
JPS5144381B2 (OSRAM) 1976-11-27
CH595134A5 (OSRAM) 1978-01-31
FR2245082A1 (OSRAM) 1975-04-18
AU7342574A (en) 1976-03-25
JPS5061182A (OSRAM) 1975-05-26

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