DE69103464T2 - Halbisolierende Indiumphosphid-Einkristalle und Verfahren zu ihrer Herstellung. - Google Patents

Halbisolierende Indiumphosphid-Einkristalle und Verfahren zu ihrer Herstellung.

Info

Publication number
DE69103464T2
DE69103464T2 DE69103464T DE69103464T DE69103464T2 DE 69103464 T2 DE69103464 T2 DE 69103464T2 DE 69103464 T DE69103464 T DE 69103464T DE 69103464 T DE69103464 T DE 69103464T DE 69103464 T2 DE69103464 T2 DE 69103464T2
Authority
DE
Germany
Prior art keywords
semi
manufacture
single crystals
indium phosphide
phosphide single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69103464T
Other languages
English (en)
Other versions
DE69103464D1 (de
Inventor
Haruhito Shimakura
Osamu Oda
Keiji Kainosho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Japan Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2115403A external-priority patent/JP2572291B2/ja
Priority claimed from JP12266990A external-priority patent/JPH0418761A/ja
Application filed by Japan Energy Corp filed Critical Japan Energy Corp
Publication of DE69103464D1 publication Critical patent/DE69103464D1/de
Application granted granted Critical
Publication of DE69103464T2 publication Critical patent/DE69103464T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69103464T 1990-03-02 1991-03-01 Halbisolierende Indiumphosphid-Einkristalle und Verfahren zu ihrer Herstellung. Expired - Fee Related DE69103464T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5137090 1990-03-02
JP2115403A JP2572291B2 (ja) 1990-03-02 1990-05-01 半絶縁性ＩｎＰ単結晶基板の製造方法
JP12266990A JPH0418761A (ja) 1990-05-11 1990-05-11 化合物半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69103464D1 DE69103464D1 (de) 1994-09-22
DE69103464T2 true DE69103464T2 (de) 1994-12-15

Family

ID=27294293

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69103464T Expired - Fee Related DE69103464T2 (de) 1990-03-02 1991-03-01 Halbisolierende Indiumphosphid-Einkristalle und Verfahren zu ihrer Herstellung.

Country Status (3)

Country Link
US (1) US5173127A (de)
EP (1) EP0455325B1 (de)
DE (1) DE69103464T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5314547A (en) * 1992-09-28 1994-05-24 General Motors Corporation Rare earth slab doping of group III-V compounds
JPH08236442A (ja) * 1995-02-28 1996-09-13 Mitsubishi Electric Corp 半導体ウエハ，及びその製造方法
US6749691B2 (en) * 2001-02-14 2004-06-15 Air Liquide America, L.P. Methods of cleaning discolored metallic arrays using chemical compositions
US20050059260A1 (en) * 2003-09-15 2005-03-17 Haowen Bu CMOS transistors and methods of forming same
CN103361735B (zh) * 2012-03-26 2017-07-28 北京通美晶体技术有限公司 一种iiia‑va族半导体单晶衬底及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141954A (en) * 1974-10-07 1976-04-08 Mitsubishi Electric Corp 335 zokukagobutsuhandotaino ketsushoseichohoho
US4268844A (en) * 1979-12-31 1981-05-19 The United States Of America As Represented By The Secretary Of The Navy Insulated gate field-effect transistors
JPS61222911A (ja) * 1985-03-28 1986-10-03 Toshiba Corp 燐化化合物の合成方法
JPS63220632A (ja) * 1987-03-10 1988-09-13 Sony Corp 情報伝送装置

Also Published As

Publication number Publication date
DE69103464D1 (de) 1994-09-22
EP0455325A1 (de) 1991-11-06
EP0455325B1 (de) 1994-08-17
US5173127A (en) 1992-12-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BARZ, P., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 80803 MUENCHEN

8339 Ceased/non-payment of the annual fee