DE2412917A1 - Monolithischer aufbau fuer transistoren und zusatzschaltelemente - Google Patents
Monolithischer aufbau fuer transistoren und zusatzschaltelementeInfo
- Publication number
- DE2412917A1 DE2412917A1 DE2412917A DE2412917A DE2412917A1 DE 2412917 A1 DE2412917 A1 DE 2412917A1 DE 2412917 A DE2412917 A DE 2412917A DE 2412917 A DE2412917 A DE 2412917A DE 2412917 A1 DE2412917 A1 DE 2412917A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- transistors
- epitaxial layer
- area
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010276 construction Methods 0.000 title description 2
- 239000010410 layer Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 16
- 238000013459 approach Methods 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- PLFFHJWXOGYWPR-HEDMGYOXSA-N (4r)-4-[(3r,3as,5ar,5br,7as,11as,11br,13ar,13bs)-5a,5b,8,8,11a,13b-hexamethyl-1,2,3,3a,4,5,6,7,7a,9,10,11,11b,12,13,13a-hexadecahydrocyclopenta[a]chrysen-3-yl]pentan-1-ol Chemical compound C([C@]1(C)[C@H]2CC[C@H]34)CCC(C)(C)[C@@H]1CC[C@@]2(C)[C@]4(C)CC[C@@H]1[C@]3(C)CC[C@@H]1[C@@H](CCCO)C PLFFHJWXOGYWPR-HEDMGYOXSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE7303801A SE373984B (https=) | 1973-03-19 | 1973-03-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2412917A1 true DE2412917A1 (de) | 1974-09-26 |
Family
ID=20316959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2412917A Pending DE2412917A1 (de) | 1973-03-19 | 1974-03-18 | Monolithischer aufbau fuer transistoren und zusatzschaltelemente |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE2412917A1 (https=) |
| FR (1) | FR2222757B1 (https=) |
| GB (1) | GB1465788A (https=) |
| SE (1) | SE373984B (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19703780A1 (de) * | 1997-02-01 | 1998-08-06 | Thomas Frohberg | Trinom-Transistor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2605641C3 (de) * | 1976-02-12 | 1979-12-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Hochfrequenztransistor und Verfahren zu seiner Herstellung |
| GB2234111B (en) * | 1989-07-01 | 1992-12-02 | Plessey Co Plc | A method for fabrication of a collector-diffused isolation semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3653988A (en) * | 1968-02-05 | 1972-04-04 | Bell Telephone Labor Inc | Method of forming monolithic semiconductor integrated circuit devices |
-
1973
- 1973-03-19 SE SE7303801A patent/SE373984B/xx unknown
-
1974
- 1974-03-18 DE DE2412917A patent/DE2412917A1/de active Pending
- 1974-03-18 FR FR7409064A patent/FR2222757B1/fr not_active Expired
- 1974-03-19 GB GB1219674A patent/GB1465788A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19703780A1 (de) * | 1997-02-01 | 1998-08-06 | Thomas Frohberg | Trinom-Transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2222757A1 (https=) | 1974-10-18 |
| SE373984B (https=) | 1975-02-17 |
| FR2222757B1 (https=) | 1977-10-07 |
| GB1465788A (en) | 1977-03-02 |
| AU6645974A (en) | 1975-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |