GB1465788A - Monolithic structure including a transistor - Google Patents

Monolithic structure including a transistor

Info

Publication number
GB1465788A
GB1465788A GB1219674A GB1219674A GB1465788A GB 1465788 A GB1465788 A GB 1465788A GB 1219674 A GB1219674 A GB 1219674A GB 1219674 A GB1219674 A GB 1219674A GB 1465788 A GB1465788 A GB 1465788A
Authority
GB
United Kingdom
Prior art keywords
subcollector
transistor
epitaxial layer
doped
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1219674A
Inventor
F L G Bjorklund
E L Nystrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of GB1465788A publication Critical patent/GB1465788A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

1465788 Semi-conductor devices TELEFONAKTIEBOLAGET L M ERICSSON 19 March 1974 [19 March 1973] 12196/74 Heading H1K A monolithic structure for transistors, which may also include other circuit components, comprises a lightly doped substrate 1 having a heavily doped subcollector region 2 of opposite conductivity to the substrate for each transistor, an epitaxial layer 3<SP>1</SP> lightly doped to be of the same conductivity type as the subcollector but re-doped through a major part 12 of its depth to be of opposite type, the part 12 being the transistor base and having an emitter region 5 formed therein of the same conductivity type as the subcollector 2; the epitaxial layer 3<SP>1</SP> also has heavily doped isolation regions 4 surrounding the subcollector to which the collector contact is made. In the NPN transistor and circuit resistor shown, the epitaxial layer 3<SP>1</SP> has a further, heavily doped, surface layer 13 of opposite conductivity type to the subcollector. In another arrangement the layer 13 is omitted. The surface of the epitaxial layer 3<SP>1</SP>, which may be of silicon, is covered by a layer 6 of silicon oxide in which windows 7-11 are formed to enable connection to be made to the emitter, base and collector of the transistor and to the resistor respectively. The doped regions 5, 12, 13 in the epitaxial layer may be produced by diffusion or ion implantation. The structure may also include diodes and capacitors.
GB1219674A 1973-03-19 1974-03-19 Monolithic structure including a transistor Expired GB1465788A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7303801A SE373984B (en) 1973-03-19 1973-03-19

Publications (1)

Publication Number Publication Date
GB1465788A true GB1465788A (en) 1977-03-02

Family

ID=20316959

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1219674A Expired GB1465788A (en) 1973-03-19 1974-03-19 Monolithic structure including a transistor

Country Status (4)

Country Link
DE (1) DE2412917A1 (en)
FR (1) FR2222757B1 (en)
GB (1) GB1465788A (en)
SE (1) SE373984B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2234111A (en) * 1989-07-01 1991-01-23 Plessey Co Plc A method for fabrication of a collector-diffused isolation semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2605641C3 (en) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen High frequency transistor and process for its manufacture
DE19703780A1 (en) * 1997-02-01 1998-08-06 Thomas Frohberg Trinomial transistor for switching and amplifying electronically

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2234111A (en) * 1989-07-01 1991-01-23 Plessey Co Plc A method for fabrication of a collector-diffused isolation semiconductor device
GB2234111B (en) * 1989-07-01 1992-12-02 Plessey Co Plc A method for fabrication of a collector-diffused isolation semiconductor device

Also Published As

Publication number Publication date
SE373984B (en) 1975-02-17
AU6645974A (en) 1975-09-11
FR2222757A1 (en) 1974-10-18
FR2222757B1 (en) 1977-10-07
DE2412917A1 (en) 1974-09-26

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee