SE373984B - - Google Patents

Info

Publication number
SE373984B
SE373984B SE7303801A SE7303801A SE373984B SE 373984 B SE373984 B SE 373984B SE 7303801 A SE7303801 A SE 7303801A SE 7303801 A SE7303801 A SE 7303801A SE 373984 B SE373984 B SE 373984B
Authority
SE
Sweden
Application number
SE7303801A
Inventor
F L G Bjorklund
E L Nystrom
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE7303801A priority Critical patent/SE373984B/xx
Priority to AU66459/74A priority patent/AU484016B2/en
Priority to FR7409064A priority patent/FR2222757B1/fr
Priority to DE19742412917 priority patent/DE2412917A1/en
Priority to GB1219674A priority patent/GB1465788A/en
Publication of SE373984B publication Critical patent/SE373984B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
SE7303801A 1973-03-19 1973-03-19 SE373984B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE7303801A SE373984B (en) 1973-03-19 1973-03-19
AU66459/74A AU484016B2 (en) 1973-03-19 1974-03-08 Monolithic structure for transistors and accessory circuit components
FR7409064A FR2222757B1 (en) 1973-03-19 1974-03-18
DE19742412917 DE2412917A1 (en) 1973-03-19 1974-03-18 MONOLITHIC CONSTRUCTION FOR TRANSISTORS AND ADDITIONAL SWITCHING ELEMENTS
GB1219674A GB1465788A (en) 1973-03-19 1974-03-19 Monolithic structure including a transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7303801A SE373984B (en) 1973-03-19 1973-03-19

Publications (1)

Publication Number Publication Date
SE373984B true SE373984B (en) 1975-02-17

Family

ID=20316959

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7303801A SE373984B (en) 1973-03-19 1973-03-19

Country Status (4)

Country Link
DE (1) DE2412917A1 (en)
FR (1) FR2222757B1 (en)
GB (1) GB1465788A (en)
SE (1) SE373984B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2605641C3 (en) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen High frequency transistor and process for its manufacture
GB2234111B (en) * 1989-07-01 1992-12-02 Plessey Co Plc A method for fabrication of a collector-diffused isolation semiconductor device
DE19703780A1 (en) * 1997-02-01 1998-08-06 Thomas Frohberg Trinomial transistor for switching and amplifying electronically

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices

Also Published As

Publication number Publication date
FR2222757A1 (en) 1974-10-18
AU6645974A (en) 1975-09-11
FR2222757B1 (en) 1977-10-07
GB1465788A (en) 1977-03-02
DE2412917A1 (en) 1974-09-26

Similar Documents

Publication Publication Date Title
AU476761B2 (en)
AU474593B2 (en)
AU474511B2 (en)
AU474838B2 (en)
AU465453B2 (en)
AU465434B2 (en)
AU471343B2 (en)
AU476714B2 (en)
AU476696B2 (en)
AU466283B2 (en)
AU472848B2 (en)
FR2222757B1 (en)
AU477823B2 (en)
AR195311A1 (en)
AR193950A1 (en)
AR195948A1 (en)
AU476873B1 (en)
AU471461B2 (en)
AU477824B2 (en)
AR196212Q (en)
AR196123Q (en)
BG25980A3 (en)
BG18566A1 (en)
AU479521A (en)
AU479504A (en)