GB1465788A - Monolithic structure including a transistor - Google Patents

Monolithic structure including a transistor

Info

Publication number
GB1465788A
GB1465788A GB1219674A GB1219674A GB1465788A GB 1465788 A GB1465788 A GB 1465788A GB 1219674 A GB1219674 A GB 1219674A GB 1219674 A GB1219674 A GB 1219674A GB 1465788 A GB1465788 A GB 1465788A
Authority
GB
United Kingdom
Prior art keywords
subcollector
transistor
epitaxial layer
doped
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1219674A
Other languages
English (en)
Inventor
F L G Bjorklund
E L Nystrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of GB1465788A publication Critical patent/GB1465788A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB1219674A 1973-03-19 1974-03-19 Monolithic structure including a transistor Expired GB1465788A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7303801A SE373984B (https=) 1973-03-19 1973-03-19

Publications (1)

Publication Number Publication Date
GB1465788A true GB1465788A (en) 1977-03-02

Family

ID=20316959

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1219674A Expired GB1465788A (en) 1973-03-19 1974-03-19 Monolithic structure including a transistor

Country Status (4)

Country Link
DE (1) DE2412917A1 (https=)
FR (1) FR2222757B1 (https=)
GB (1) GB1465788A (https=)
SE (1) SE373984B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2234111A (en) * 1989-07-01 1991-01-23 Plessey Co Plc A method for fabrication of a collector-diffused isolation semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2605641C3 (de) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Hochfrequenztransistor und Verfahren zu seiner Herstellung
DE19703780A1 (de) * 1997-02-01 1998-08-06 Thomas Frohberg Trinom-Transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2234111A (en) * 1989-07-01 1991-01-23 Plessey Co Plc A method for fabrication of a collector-diffused isolation semiconductor device
GB2234111B (en) * 1989-07-01 1992-12-02 Plessey Co Plc A method for fabrication of a collector-diffused isolation semiconductor device

Also Published As

Publication number Publication date
FR2222757A1 (https=) 1974-10-18
SE373984B (https=) 1975-02-17
FR2222757B1 (https=) 1977-10-07
DE2412917A1 (de) 1974-09-26
AU6645974A (en) 1975-09-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee