DE2410628A1 - Ladungsgekoppelte halbleiteranordnung - Google Patents

Ladungsgekoppelte halbleiteranordnung

Info

Publication number
DE2410628A1
DE2410628A1 DE2410628A DE2410628A DE2410628A1 DE 2410628 A1 DE2410628 A1 DE 2410628A1 DE 2410628 A DE2410628 A DE 2410628A DE 2410628 A DE2410628 A DE 2410628A DE 2410628 A1 DE2410628 A1 DE 2410628A1
Authority
DE
Germany
Prior art keywords
polycrystalline silicon
silicon
ion
photoresist
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2410628A
Other languages
German (de)
English (en)
Inventor
Gilbert Frank Amelio
Choong-Ki Kim
Phillip James Salsbury
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of DE2410628A1 publication Critical patent/DE2410628A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/03—Diffusion

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
DE2410628A 1973-05-21 1974-03-06 Ladungsgekoppelte halbleiteranordnung Ceased DE2410628A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00362132A US3853634A (en) 1973-05-21 1973-05-21 Self-aligned implanted barrier two-phase charge coupled devices

Publications (1)

Publication Number Publication Date
DE2410628A1 true DE2410628A1 (de) 1974-12-12

Family

ID=23424806

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2410628A Ceased DE2410628A1 (de) 1973-05-21 1974-03-06 Ladungsgekoppelte halbleiteranordnung

Country Status (8)

Country Link
US (1) US3853634A (enExample)
JP (1) JPS5713142B2 (enExample)
CA (1) CA994925A (enExample)
DE (1) DE2410628A1 (enExample)
FR (1) FR2231113B1 (enExample)
GB (1) GB1463121A (enExample)
IT (1) IT1011658B (enExample)
NL (1) NL7401971A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925105A (en) * 1974-07-02 1975-12-09 Texas Instruments Inc Process for fabricating integrated circuits utilizing ion implantation
US3930893A (en) * 1975-03-03 1976-01-06 Honeywell Information Systems, Inc. Conductivity connected charge-coupled device fabrication process
US4167017A (en) * 1976-06-01 1979-09-04 Texas Instruments Incorporated CCD structures with surface potential asymmetry beneath the phase electrodes
US4076557A (en) * 1976-08-19 1978-02-28 Honeywell Inc. Method for providing semiconductor devices
JPS5325373A (en) * 1976-08-20 1978-03-09 Sony Corp Production of charge transfer device
US4156247A (en) * 1976-12-15 1979-05-22 Electron Memories & Magnetic Corporation Two-phase continuous poly silicon gate CCD
JPS53110385A (en) * 1977-03-08 1978-09-27 Matsushita Electric Ind Co Ltd Manufacture of ccd
US4360963A (en) * 1981-07-31 1982-11-30 Rca Corporation Method of making CCD imagers with reduced defects
GB2137806B (en) * 1983-04-05 1986-10-08 Standard Telephones Cables Ltd Ion implantation in semiconductor bodies
FR2578683B1 (fr) * 1985-03-08 1987-08-28 Thomson Csf Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede
US4992392A (en) * 1989-12-28 1991-02-12 Eastman Kodak Company Method of making a virtual phase CCD
JPH06140442A (ja) * 1992-10-29 1994-05-20 Matsushita Electric Ind Co Ltd 電荷転送装置
US5302544A (en) * 1992-12-17 1994-04-12 Eastman Kodak Company Method of making CCD having a single level electrode of single crystalline silicon
US5298448A (en) * 1992-12-18 1994-03-29 Eastman Kodak Company Method of making two-phase buried channel planar gate CCD
US5292682A (en) * 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US7217601B1 (en) 2002-10-23 2007-05-15 Massachusetts Institute Of Technology High-yield single-level gate charge-coupled device design and fabrication
US9848142B2 (en) 2015-07-10 2017-12-19 Semiconductor Components Industries, Llc Methods for clocking an image sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3717790A (en) * 1971-06-24 1973-02-20 Bell Telephone Labor Inc Ion implanted silicon diode array targets for electron beam camera tubes

Also Published As

Publication number Publication date
FR2231113A1 (enExample) 1974-12-20
US3853634A (en) 1974-12-10
FR2231113B1 (enExample) 1978-03-31
JPS5713142B2 (enExample) 1982-03-15
NL7401971A (enExample) 1974-11-25
IT1011658B (it) 1977-02-10
CA994925A (en) 1976-08-10
AU6673674A (en) 1975-09-18
GB1463121A (en) 1977-02-02
JPS5020678A (enExample) 1975-03-05

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Legal Events

Date Code Title Description
OD Request for examination
8131 Rejection