DE2364752A1 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE2364752A1 DE2364752A1 DE19732364752 DE2364752A DE2364752A1 DE 2364752 A1 DE2364752 A1 DE 2364752A1 DE 19732364752 DE19732364752 DE 19732364752 DE 2364752 A DE2364752 A DE 2364752A DE 2364752 A1 DE2364752 A1 DE 2364752A1
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- minority carrier
- area
- width
- emitter region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 41
- 230000007704 transition Effects 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 9
- 230000006798 recombination Effects 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000010181 polygamy Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP48000550A JPS5147583B2 (hr) | 1972-12-29 | 1972-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2364752A1 true DE2364752A1 (de) | 1974-08-01 |
Family
ID=11476818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19732364752 Ceased DE2364752A1 (de) | 1972-12-29 | 1973-12-27 | Halbleitervorrichtung |
Country Status (15)
Country | Link |
---|---|
JP (1) | JPS5147583B2 (hr) |
AT (1) | AT376844B (hr) |
BE (1) | BE809216A (hr) |
BR (1) | BR7310275D0 (hr) |
CA (1) | CA993568A (hr) |
CH (1) | CH577750A5 (hr) |
DE (1) | DE2364752A1 (hr) |
DK (1) | DK140036C (hr) |
ES (1) | ES421881A1 (hr) |
FR (1) | FR2212645B1 (hr) |
GB (1) | GB1460037A (hr) |
IT (1) | IT1002384B (hr) |
NL (1) | NL7317815A (hr) |
NO (1) | NO140844C (hr) |
SE (1) | SE398940B (hr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3108491A1 (de) * | 1980-03-10 | 1982-04-01 | Nippon Telegraph and Telephone Public Corp., Tokyo | Bipolarer transistor |
AT374052B (de) * | 1974-04-04 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
AT374053B (de) * | 1974-04-10 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
AT374973B (de) * | 1974-04-16 | 1984-06-25 | Sony Corp | Wechselstrom-regelkreis |
AT374976B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Fuehlerschaltung zum feststellen des widerstands- wertes eines fuehlerelementes |
AT374974B (de) * | 1974-04-25 | 1984-06-25 | Sony Corp | Rauscheliminierungs-stromkreis |
AT374975B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Oszillator |
AT377645B (de) * | 1972-12-29 | 1985-04-10 | Sony Corp | Halbleiterbauteil |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5914897B2 (ja) * | 1975-02-08 | 1984-04-06 | ソニー株式会社 | 半導体装置 |
JPS5426789Y2 (hr) * | 1974-07-23 | 1979-09-03 | ||
IT1061510B (it) * | 1975-06-30 | 1983-04-30 | Rca Corp | Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso |
JPS52100978A (en) * | 1976-02-20 | 1977-08-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
JPS5565460A (en) * | 1978-11-09 | 1980-05-16 | Ibm | Method of manufacturing semiconductor device improved in current gain |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE547227A (hr) * | 1955-04-21 | |||
US3343048A (en) * | 1964-02-20 | 1967-09-19 | Westinghouse Electric Corp | Four layer semiconductor switching devices having a shorted emitter and method of making the same |
DE1221363B (de) * | 1964-04-25 | 1966-07-21 | Telefunken Patent | Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen |
DE1297237B (de) * | 1964-09-18 | 1969-06-12 | Itt Ind Gmbh Deutsche | Flaechentransistor und Verfahren zu seiner Herstellung |
US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure |
GB1160429A (en) * | 1965-10-14 | 1969-08-06 | Philco Ford Corp | Improvements in and relating to Semiconductive Devices. |
US3469117A (en) * | 1966-01-08 | 1969-09-23 | Nippon Telegraph & Telephone | Electric circuit employing semiconductor devices |
US3432920A (en) * | 1966-12-01 | 1969-03-18 | Rca Corp | Semiconductor devices and methods of making them |
US3512056A (en) * | 1967-04-25 | 1970-05-12 | Westinghouse Electric Corp | Double epitaxial layer high power,high speed transistor |
FR1574577A (hr) * | 1967-08-03 | 1969-07-11 | ||
US3504242A (en) * | 1967-08-11 | 1970-03-31 | Westinghouse Electric Corp | Switching power transistor with thyristor overload capacity |
US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
US3544863A (en) * | 1968-10-29 | 1970-12-01 | Motorola Inc | Monolithic integrated circuit substructure with epitaxial decoupling capacitance |
US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing |
JPS4840667B1 (hr) * | 1969-03-28 | 1973-12-01 | ||
US3717515A (en) * | 1969-11-10 | 1973-02-20 | Ibm | Process for fabricating a pedestal transistor |
DE2060854A1 (de) * | 1970-12-10 | 1972-08-17 | Siemens Ag | Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung |
DE2211384A1 (de) * | 1971-03-20 | 1972-11-30 | Philips Nv | Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung |
JPS493583A (hr) * | 1972-04-20 | 1974-01-12 |
-
1972
- 1972-12-29 JP JP48000550A patent/JPS5147583B2/ja not_active Expired
-
1973
- 1973-12-20 GB GB5909373A patent/GB1460037A/en not_active Expired
- 1973-12-21 DK DK701973A patent/DK140036C/da not_active IP Right Cessation
- 1973-12-27 AT AT1083973A patent/AT376844B/de not_active IP Right Cessation
- 1973-12-27 DE DE19732364752 patent/DE2364752A1/de not_active Ceased
- 1973-12-27 CH CH1814173A patent/CH577750A5/de not_active IP Right Cessation
- 1973-12-27 IT IT3232473A patent/IT1002384B/it active
- 1973-12-28 CA CA189,167A patent/CA993568A/en not_active Expired
- 1973-12-28 BR BR1027573A patent/BR7310275D0/pt unknown
- 1973-12-28 ES ES421881A patent/ES421881A1/es not_active Expired
- 1973-12-28 FR FR7347090A patent/FR2212645B1/fr not_active Expired
- 1973-12-28 BE BE2053325A patent/BE809216A/xx not_active IP Right Cessation
- 1973-12-28 SE SE7317518A patent/SE398940B/xx unknown
- 1973-12-28 NO NO498073A patent/NO140844C/no unknown
- 1973-12-28 NL NL7317815A patent/NL7317815A/xx unknown
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT377645B (de) * | 1972-12-29 | 1985-04-10 | Sony Corp | Halbleiterbauteil |
AT374052B (de) * | 1974-04-04 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
AT374053B (de) * | 1974-04-10 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
AT374973B (de) * | 1974-04-16 | 1984-06-25 | Sony Corp | Wechselstrom-regelkreis |
AT374974B (de) * | 1974-04-25 | 1984-06-25 | Sony Corp | Rauscheliminierungs-stromkreis |
AT374976B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Fuehlerschaltung zum feststellen des widerstands- wertes eines fuehlerelementes |
AT374975B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Oszillator |
DE3108491A1 (de) * | 1980-03-10 | 1982-04-01 | Nippon Telegraph and Telephone Public Corp., Tokyo | Bipolarer transistor |
Also Published As
Publication number | Publication date |
---|---|
AU6378973A (en) | 1975-06-19 |
NO140844C (no) | 1979-11-21 |
NO140844B (no) | 1979-08-13 |
DK140036B (da) | 1979-06-05 |
CA993568A (en) | 1976-07-20 |
GB1460037A (en) | 1976-12-31 |
DK140036C (da) | 1979-12-24 |
JPS4991191A (hr) | 1974-08-30 |
FR2212645B1 (hr) | 1977-08-05 |
ES421881A1 (es) | 1976-08-01 |
NL7317815A (hr) | 1974-07-02 |
AT376844B (de) | 1985-01-10 |
JPS5147583B2 (hr) | 1976-12-15 |
BR7310275D0 (pt) | 1974-09-24 |
FR2212645A1 (hr) | 1974-07-26 |
ATA1083973A (de) | 1984-05-15 |
IT1002384B (it) | 1976-05-20 |
SE398940B (sv) | 1978-01-23 |
BE809216A (fr) | 1974-04-16 |
CH577750A5 (hr) | 1976-07-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8131 | Rejection |