DE2325094A1 - Halbleiterspeicher - Google Patents
HalbleiterspeicherInfo
- Publication number
- DE2325094A1 DE2325094A1 DE2325094A DE2325094A DE2325094A1 DE 2325094 A1 DE2325094 A1 DE 2325094A1 DE 2325094 A DE2325094 A DE 2325094A DE 2325094 A DE2325094 A DE 2325094A DE 2325094 A1 DE2325094 A1 DE 2325094A1
- Authority
- DE
- Germany
- Prior art keywords
- dielectric layers
- over
- thickness
- diffusion
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 230000015654 memory Effects 0.000 claims description 45
- 238000009792 diffusion process Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000000007 visual effect Effects 0.000 description 3
- 230000036316 preload Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2547372A GB1363190A (en) | 1972-05-31 | 1972-05-31 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2325094A1 true DE2325094A1 (de) | 1973-12-13 |
Family
ID=10228291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2325094A Ceased DE2325094A1 (de) | 1972-05-31 | 1973-05-17 | Halbleiterspeicher |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4944677A (enrdf_load_stackoverflow) |
DE (1) | DE2325094A1 (enrdf_load_stackoverflow) |
FR (1) | FR2186736B1 (enrdf_load_stackoverflow) |
GB (1) | GB1363190A (enrdf_load_stackoverflow) |
NL (1) | NL7307596A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5528232B2 (enrdf_load_stackoverflow) * | 1974-11-01 | 1980-07-26 | ||
DE2723738C2 (de) * | 1977-05-26 | 1984-11-08 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung |
JPS63254598A (ja) * | 1987-04-11 | 1988-10-21 | 旭精工株式会社 | 2種硬貨選別装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3719866A (en) * | 1970-12-03 | 1973-03-06 | Ncr | Semiconductor memory device |
JPS5141515B2 (enrdf_load_stackoverflow) * | 1971-11-29 | 1976-11-10 | ||
JPS525233B2 (enrdf_load_stackoverflow) * | 1972-02-29 | 1977-02-10 |
-
1972
- 1972-05-31 GB GB2547372A patent/GB1363190A/en not_active Expired
-
1973
- 1973-05-17 DE DE2325094A patent/DE2325094A1/de not_active Ceased
- 1973-05-29 FR FR7319463A patent/FR2186736B1/fr not_active Expired
- 1973-05-30 JP JP48060744A patent/JPS4944677A/ja active Pending
- 1973-05-30 NL NL7307596A patent/NL7307596A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2186736B1 (enrdf_load_stackoverflow) | 1976-11-12 |
FR2186736A1 (enrdf_load_stackoverflow) | 1974-01-11 |
JPS4944677A (enrdf_load_stackoverflow) | 1974-04-26 |
NL7307596A (enrdf_load_stackoverflow) | 1973-12-04 |
GB1363190A (en) | 1974-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OD | Request for examination | ||
8127 | New person/name/address of the applicant |
Owner name: PLESSEY OVERSEAS LTD., ILFORD, ESSEX, GB |
|
8128 | New person/name/address of the agent |
Representative=s name: BERENDT, T., DIPL.-CHEM. DR. LEYH, H., DIPL.-ING. |
|
8131 | Rejection |