JPS5528232B2 - - Google Patents

Info

Publication number
JPS5528232B2
JPS5528232B2 JP12555474A JP12555474A JPS5528232B2 JP S5528232 B2 JPS5528232 B2 JP S5528232B2 JP 12555474 A JP12555474 A JP 12555474A JP 12555474 A JP12555474 A JP 12555474A JP S5528232 B2 JPS5528232 B2 JP S5528232B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12555474A
Other languages
Japanese (ja)
Other versions
JPS5152281A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12555474A priority Critical patent/JPS5528232B2/ja
Priority to NLAANVRAGE7512828,A priority patent/NL176721C/xx
Priority to DE2548903A priority patent/DE2548903C2/de
Publication of JPS5152281A publication Critical patent/JPS5152281A/ja
Publication of JPS5528232B2 publication Critical patent/JPS5528232B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/681Floating-gate IGFETs having only two programming levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP12555474A 1974-11-01 1974-11-01 Expired JPS5528232B2 (enrdf_load_stackoverflow)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12555474A JPS5528232B2 (enrdf_load_stackoverflow) 1974-11-01 1974-11-01
NLAANVRAGE7512828,A NL176721C (nl) 1974-11-01 1975-10-31 Werkwijze voor het vervaardigen van een halfgeleidergeheugeninrichting.
DE2548903A DE2548903C2 (de) 1974-11-01 1975-10-31 Verfahren zur Herstellung eines Speicher-Feldeffekttransistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12555474A JPS5528232B2 (enrdf_load_stackoverflow) 1974-11-01 1974-11-01

Publications (2)

Publication Number Publication Date
JPS5152281A JPS5152281A (enrdf_load_stackoverflow) 1976-05-08
JPS5528232B2 true JPS5528232B2 (enrdf_load_stackoverflow) 1980-07-26

Family

ID=14913063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12555474A Expired JPS5528232B2 (enrdf_load_stackoverflow) 1974-11-01 1974-11-01

Country Status (3)

Country Link
JP (1) JPS5528232B2 (enrdf_load_stackoverflow)
DE (1) DE2548903C2 (enrdf_load_stackoverflow)
NL (1) NL176721C (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122374A (en) * 1977-03-31 1978-10-25 Fujitsu Ltd Manufacture for double gate consitution semiconductor device
DE2743422A1 (de) * 1977-09-27 1979-03-29 Siemens Ag Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik
DE2803431A1 (de) * 1978-01-26 1979-08-02 Siemens Ag Verfahren zur herstellung von mos-transistoren
DE2814052A1 (de) * 1978-03-31 1979-10-11 Siemens Ag Verfahren zur herstellung von oxidisolationsschichten fuer floating-gate-mos- transistoren, bzw. mos-transistoren mit mindestens zwei polysilicium-elektroden

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device
GB1363190A (en) * 1972-05-31 1974-08-14 Plessey Co Ltd Semiconductor memory device
JPS5330310B2 (enrdf_load_stackoverflow) * 1972-09-13 1978-08-25

Also Published As

Publication number Publication date
NL176721C (nl) 1985-05-17
JPS5152281A (enrdf_load_stackoverflow) 1976-05-08
DE2548903C2 (de) 1984-08-30
NL7512828A (nl) 1976-05-04
NL176721B (nl) 1984-12-17
DE2548903A1 (de) 1976-05-06

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