GB1363190A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB1363190A
GB1363190A GB2547372A GB2547372A GB1363190A GB 1363190 A GB1363190 A GB 1363190A GB 2547372 A GB2547372 A GB 2547372A GB 2547372 A GB2547372 A GB 2547372A GB 1363190 A GB1363190 A GB 1363190A
Authority
GB
United Kingdom
Prior art keywords
memory device
overlies
semiconductor memory
source
drain diffusions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2547372A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GE Healthcare UK Ltd
Original Assignee
GE Healthcare UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GE Healthcare UK Ltd filed Critical GE Healthcare UK Ltd
Priority to GB2547372A priority Critical patent/GB1363190A/en
Priority to DE2325094A priority patent/DE2325094A1/de
Priority to FR7319463A priority patent/FR2186736B1/fr
Priority to NL7307596A priority patent/NL7307596A/xx
Priority to JP48060744A priority patent/JPS4944677A/ja
Publication of GB1363190A publication Critical patent/GB1363190A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
GB2547372A 1972-05-31 1972-05-31 Semiconductor memory device Expired GB1363190A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB2547372A GB1363190A (en) 1972-05-31 1972-05-31 Semiconductor memory device
DE2325094A DE2325094A1 (de) 1972-05-31 1973-05-17 Halbleiterspeicher
FR7319463A FR2186736B1 (enrdf_load_stackoverflow) 1972-05-31 1973-05-29
NL7307596A NL7307596A (enrdf_load_stackoverflow) 1972-05-31 1973-05-30
JP48060744A JPS4944677A (enrdf_load_stackoverflow) 1972-05-31 1973-05-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2547372A GB1363190A (en) 1972-05-31 1972-05-31 Semiconductor memory device

Publications (1)

Publication Number Publication Date
GB1363190A true GB1363190A (en) 1974-08-14

Family

ID=10228291

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2547372A Expired GB1363190A (en) 1972-05-31 1972-05-31 Semiconductor memory device

Country Status (5)

Country Link
JP (1) JPS4944677A (enrdf_load_stackoverflow)
DE (1) DE2325094A1 (enrdf_load_stackoverflow)
FR (1) FR2186736B1 (enrdf_load_stackoverflow)
GB (1) GB1363190A (enrdf_load_stackoverflow)
NL (1) NL7307596A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2548903A1 (de) * 1974-11-01 1976-05-06 Hitachi Ltd Langfristig stabiler halbleiterspeicher und verfahren zu seiner herstellung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2723738C2 (de) * 1977-05-26 1984-11-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung
JPS63254598A (ja) * 1987-04-11 1988-10-21 旭精工株式会社 ２種硬貨選別装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device
JPS5141515B2 (enrdf_load_stackoverflow) * 1971-11-29 1976-11-10
JPS525233B2 (enrdf_load_stackoverflow) * 1972-02-29 1977-02-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2548903A1 (de) * 1974-11-01 1976-05-06 Hitachi Ltd Langfristig stabiler halbleiterspeicher und verfahren zu seiner herstellung

Also Published As

Publication number Publication date
FR2186736A1 (enrdf_load_stackoverflow) 1974-01-11
NL7307596A (enrdf_load_stackoverflow) 1973-12-04
FR2186736B1 (enrdf_load_stackoverflow) 1976-11-12
DE2325094A1 (de) 1973-12-13
JPS4944677A (enrdf_load_stackoverflow) 1974-04-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19930418