GB1325811A - Semiconductor body of preselected surface potential - Google Patents
Semiconductor body of preselected surface potentialInfo
- Publication number
- GB1325811A GB1325811A GB1524671A GB1524671A GB1325811A GB 1325811 A GB1325811 A GB 1325811A GB 1524671 A GB1524671 A GB 1524671A GB 1524671 A GB1524671 A GB 1524671A GB 1325811 A GB1325811 A GB 1325811A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- silicon
- silicon dioxide
- surface potential
- prevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Non-Volatile Memory (AREA)
Abstract
1325811 Semi-conductor devices RCA CORPORATION 17 May 1971 [25 May 1970] 15246/71 Heading H1K To establish a given surface potential and to prevent surface inversion layers in a silicon semiconductor device due to the presence of a silicon dioxide insulating layer on the surface of the device, a second insulating layer of silicon nitride is applied over the silicon dioxide layer. The silicon dioxide layer must be thin enough to allow electrons to tunnel through it to the interface between the two insulating layers and thus has a thickness of less than 50 Š. The surface potential is determined primarily by the temperature at which the silicon nitride layer is deposited. The invention is described as applied to a silicon body containing two IGFETS wherein a silicon nitride layer 70 covers a silicon dioxide layer 68 to prevent a surface channel forming in the region 74 and linking the two transistors. Electrodes are of gold, aluminium or silicon and the thickness of layer 70 is such as to prevent voltage, present in leads overlying the layer affecting unduly the surface charge on the silicon body.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4099570A | 1970-05-25 | 1970-05-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1325811A true GB1325811A (en) | 1973-08-08 |
Family
ID=21914138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1524671A Expired GB1325811A (en) | 1970-05-25 | 1971-05-17 | Semiconductor body of preselected surface potential |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE767564A (en) |
| CA (1) | CA942641A (en) |
| DE (1) | DE2125185A1 (en) |
| FR (1) | FR2090259B1 (en) |
| GB (1) | GB1325811A (en) |
| NL (1) | NL7107072A (en) |
| SE (1) | SE374979B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0078318A4 (en) * | 1981-05-11 | 1983-06-24 | Ncr Corp | Alterable threshold semiconductor memory device. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1227851A (en) * | 1967-02-16 | 1971-04-07 |
-
1971
- 1971-04-08 CA CA110,057A patent/CA942641A/en not_active Expired
- 1971-05-17 GB GB1524671A patent/GB1325811A/en not_active Expired
- 1971-05-18 SE SE644271A patent/SE374979B/xx unknown
- 1971-05-21 DE DE19712125185 patent/DE2125185A1/en active Pending
- 1971-05-24 FR FR7118567A patent/FR2090259B1/fr not_active Expired
- 1971-05-24 BE BE767564A patent/BE767564A/en unknown
- 1971-05-24 NL NL7107072A patent/NL7107072A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2090259B1 (en) | 1977-08-05 |
| SE374979B (en) | 1975-03-24 |
| FR2090259A1 (en) | 1972-01-14 |
| CA942641A (en) | 1974-02-26 |
| BE767564A (en) | 1971-10-18 |
| NL7107072A (en) | 1971-11-29 |
| DE2125185A1 (en) | 1971-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |