FR2090259A1 - - Google Patents

Info

Publication number
FR2090259A1
FR2090259A1 FR7118567A FR7118567A FR2090259A1 FR 2090259 A1 FR2090259 A1 FR 2090259A1 FR 7118567 A FR7118567 A FR 7118567A FR 7118567 A FR7118567 A FR 7118567A FR 2090259 A1 FR2090259 A1 FR 2090259A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7118567A
Other languages
French (fr)
Other versions
FR2090259B1 (en
Inventor
E C Ross
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2090259A1 publication Critical patent/FR2090259A1/fr
Application granted granted Critical
Publication of FR2090259B1 publication Critical patent/FR2090259B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR7118567A 1970-05-25 1971-05-24 Expired FR2090259B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4099570A 1970-05-25 1970-05-25

Publications (2)

Publication Number Publication Date
FR2090259A1 true FR2090259A1 (en) 1972-01-14
FR2090259B1 FR2090259B1 (en) 1977-08-05

Family

ID=21914138

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7118567A Expired FR2090259B1 (en) 1970-05-25 1971-05-24

Country Status (7)

Country Link
BE (1) BE767564A (en)
CA (1) CA942641A (en)
DE (1) DE2125185A1 (en)
FR (1) FR2090259B1 (en)
GB (1) GB1325811A (en)
NL (1) NL7107072A (en)
SE (1) SE374979B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078318A1 (en) * 1981-05-11 1983-05-11 Ncr Corporation Alterable threshold semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1555099A (en) * 1967-02-16 1969-01-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1555099A (en) * 1967-02-16 1969-01-24

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE,"APPLIED PHYSICS LETTERS",VOL.15,NO.12,15 DECEMBRE 1969,"EFFECTS OF SILICON *
408-409.PAGES 408-409.LA CHARGE INITIALEMENT STOCKEE DANS UNE STRUCTURE MNOS DANS LAQUELLE *
CONDENSATEUR MNOS.CETTE CHARGE DEVIENT NEGATIVE A PARTIR D'UNE TEMPERATURE DE CROISSANCE DE *
DE PORTE SIMILAIRE MAIS DES MODES DE FONCTIONNEMENT DIFFERENTS EN VARIANT LA TEMPER *
DE(PORTE SIMILAIRE MAIS DES MODES DE FONCTIONNEMENT DIFFERENTS EN VARIANT LA TEMPERATURE DECROISSANCE DE LA COUCHE DE NITRURE DE SILICIUM.) *
LA COUCHE DE NITRURE DETERMINEE.LE FAIT QUE LA CHARGE STOCKEE CHANGE DE SIGNE A DES *
NITRIDE GROWTH TEMPERATURE ON CHARGE STORAGE IN THE MNOS STRUCTURE",E.C.ROSS ET AL.,PAGES *
TEMPERATURES PLUS HAUTES DONNE LA POSSIBILITE DE FABRIQUER DES TRANSISTORS AYANT UNE STRUCTURE *
UN EFFET TUNNEL PEUT S'ETABLIR ET QUI COMPREND UNE COUCHE DE SIO2 D'UNE EPAISSEUR DE 20 A ET *
UNE COUCHE DE NITRURE DE SILICIUM EST DETERMINEE EN MESURANT LA TENSION PLATE-BANDE D'UN *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078318A1 (en) * 1981-05-11 1983-05-11 Ncr Corporation Alterable threshold semiconductor memory device
EP0078318A4 (en) * 1981-05-11 1983-06-24 Ncr Corp Alterable threshold semiconductor memory device.

Also Published As

Publication number Publication date
CA942641A (en) 1974-02-26
FR2090259B1 (en) 1977-08-05
DE2125185A1 (en) 1971-12-09
SE374979B (en) 1975-03-24
BE767564A (en) 1971-10-18
NL7107072A (en) 1971-11-29
GB1325811A (en) 1973-08-08

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Legal Events

Date Code Title Description
ST Notification of lapse