GB1356670A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1356670A
GB1356670A GB4507971A GB4507971A GB1356670A GB 1356670 A GB1356670 A GB 1356670A GB 4507971 A GB4507971 A GB 4507971A GB 4507971 A GB4507971 A GB 4507971A GB 1356670 A GB1356670 A GB 1356670A
Authority
GB
United Kingdom
Prior art keywords
layer
gate electrode
thyristor
layers
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4507971A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1356670A publication Critical patent/GB1356670A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

1356670 Semi-conductor devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 28 Sept 1971 [8 Oct 1970] 45079/71 Heading H1K The gate electrode 9 of a thyristor is capacitively coupled through an insulating layer 8 to three of the layers 1, 2, 3 of the device so that a suitable potential pulse applied between the gate electrode 9 and the anode 5 or an additional ohmic electrode 10 on the layer 2 causes a conductive channel to form across the layer 2 shorting the reverse-biased junction 2/3 and switching the thyristor into its conductive state. The gate electrode 9 and the insulating layer 8, which may be silicon dioxide or nitride, extends into a recess 7 penetrating through the layers 1, 2 to the layer 3. The device may be made of Si or Ge, but if GaAs or GaP are employed it may emit light when switched on. Reference has been directed by the Comptroller to Specification 1,055,682.
GB4507971A 1970-10-08 1971-09-28 Semiconductor device Expired GB1356670A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8914770A JPS5125116B1 (en) 1970-10-08 1970-10-08

Publications (1)

Publication Number Publication Date
GB1356670A true GB1356670A (en) 1974-06-12

Family

ID=13962739

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4507971A Expired GB1356670A (en) 1970-10-08 1971-09-28 Semiconductor device

Country Status (6)

Country Link
JP (1) JPS5125116B1 (en)
CA (1) CA931661A (en)
DE (1) DE2149760A1 (en)
FR (1) FR2110299B1 (en)
GB (1) GB1356670A (en)
NL (1) NL7113770A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243021A (en) * 1990-04-09 1991-10-16 Philips Electronic Associated Mos- gated thyristor
DE19520785C2 (en) * 1994-06-08 2001-12-06 Fuji Electric Co Ltd Insulated gate thyristor

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904424C2 (en) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor controlled by field effect transistor
DE2915885C2 (en) * 1979-04-19 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Thyristor controlled by field effect transistor
DE2945380A1 (en) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München TRIAC WITH A MULTILAYER SEMICONDUCTOR BODY
DE2945366A1 (en) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH CONTROLLABLE EMITTER SHORT CIRCUITS
DE2945347A1 (en) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH AUXILIARY ELECTRODE AND METHOD FOR ITS OPERATION
FR2488046A1 (en) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc DMOS controlled semiconductor power device - uses DMOS FET to drive thyristor with photodiodes deposited on insulating layer with power device using most of substrate area
FR3127456A1 (en) 2021-09-30 2023-03-31 Psa Automobiles Sa CENTRAL CONSOLE WITH CONTROL UNIT WITH TWO INTERNAL LIGHTING TRIGGERS, FOR ONE VEHICLE

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113802B2 (en) * 1972-09-13 1976-05-04

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243021A (en) * 1990-04-09 1991-10-16 Philips Electronic Associated Mos- gated thyristor
DE19520785C2 (en) * 1994-06-08 2001-12-06 Fuji Electric Co Ltd Insulated gate thyristor

Also Published As

Publication number Publication date
JPS5125116B1 (en) 1976-07-28
FR2110299A1 (en) 1972-06-02
DE2149760A1 (en) 1972-04-13
AU3396471A (en) 1973-04-05
FR2110299B1 (en) 1976-09-03
CA931661A (en) 1973-08-07
NL7113770A (en) 1972-04-11

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee