NL7113770A - - Google Patents

Info

Publication number
NL7113770A
NL7113770A NL7113770A NL7113770A NL7113770A NL 7113770 A NL7113770 A NL 7113770A NL 7113770 A NL7113770 A NL 7113770A NL 7113770 A NL7113770 A NL 7113770A NL 7113770 A NL7113770 A NL 7113770A
Authority
NL
Netherlands
Application number
NL7113770A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7113770A publication Critical patent/NL7113770A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
NL7113770A 1970-10-08 1971-10-07 NL7113770A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8914770A JPS5125116B1 (en) 1970-10-08 1970-10-08

Publications (1)

Publication Number Publication Date
NL7113770A true NL7113770A (en) 1972-04-11

Family

ID=13962739

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7113770A NL7113770A (en) 1970-10-08 1971-10-07

Country Status (6)

Country Link
JP (1) JPS5125116B1 (en)
CA (1) CA931661A (en)
DE (1) DE2149760A1 (en)
FR (1) FR2110299B1 (en)
GB (1) GB1356670A (en)
NL (1) NL7113770A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904424C2 (en) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor controlled by field effect transistor
DE2915885C2 (en) * 1979-04-19 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Thyristor controlled by field effect transistor
DE2945380A1 (en) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München TRIAC WITH A MULTILAYER SEMICONDUCTOR BODY
DE2945366A1 (en) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH CONTROLLABLE EMITTER SHORT CIRCUITS
DE2945347A1 (en) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH AUXILIARY ELECTRODE AND METHOD FOR ITS OPERATION
FR2488046A1 (en) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc DMOS controlled semiconductor power device - uses DMOS FET to drive thyristor with photodiodes deposited on insulating layer with power device using most of substrate area
GB2243021A (en) * 1990-04-09 1991-10-16 Philips Electronic Associated Mos- gated thyristor
JPH07335858A (en) * 1994-06-08 1995-12-22 Fuji Electric Co Ltd Insulated gate thyristor and its control method
FR3127456A1 (en) 2021-09-30 2023-03-31 Psa Automobiles Sa CENTRAL CONSOLE WITH CONTROL UNIT WITH TWO INTERNAL LIGHTING TRIGGERS, FOR ONE VEHICLE

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113802B2 (en) * 1972-09-13 1976-05-04

Also Published As

Publication number Publication date
AU3396471A (en) 1973-04-05
FR2110299A1 (en) 1972-06-02
DE2149760A1 (en) 1972-04-13
CA931661A (en) 1973-08-07
GB1356670A (en) 1974-06-12
FR2110299B1 (en) 1976-09-03
JPS5125116B1 (en) 1976-07-28

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Legal Events

Date Code Title Description
BV The patent application has lapsed