GB1305803A - - Google Patents
Info
- Publication number
- GB1305803A GB1305803A GB4408872A GB4408870A GB1305803A GB 1305803 A GB1305803 A GB 1305803A GB 4408872 A GB4408872 A GB 4408872A GB 4408870 A GB4408870 A GB 4408870A GB 1305803 A GB1305803 A GB 1305803A
- Authority
- GB
- United Kingdom
- Prior art keywords
- insulating layer
- semiconductor
- igfet
- cis
- jan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79256969A | 1969-01-21 | 1969-01-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1305803A true GB1305803A (enrdf_load_stackoverflow) | 1973-02-07 |
Family
ID=25157354
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB146170A Expired GB1305802A (enrdf_load_stackoverflow) | 1969-01-21 | 1970-01-21 | |
GB4408872A Expired GB1305803A (enrdf_load_stackoverflow) | 1969-01-21 | 1970-01-21 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB146170A Expired GB1305802A (enrdf_load_stackoverflow) | 1969-01-21 | 1970-01-21 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5139058B1 (enrdf_load_stackoverflow) |
DE (1) | DE2002133A1 (enrdf_load_stackoverflow) |
FR (1) | FR2028816B1 (enrdf_load_stackoverflow) |
GB (2) | GB1305802A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3805062A (en) * | 1972-06-21 | 1974-04-16 | Gen Electric | Method and apparatus for sensing radiation and providing electrical readout |
JPS63123675A (ja) * | 1986-11-10 | 1988-05-27 | 株式会社 小山鉄工所 | ペンチ,ニツパ−などの工具用握柄 |
-
1970
- 1970-01-19 DE DE19702002133 patent/DE2002133A1/de not_active Withdrawn
- 1970-01-21 JP JP534070A patent/JPS5139058B1/ja active Pending
- 1970-01-21 GB GB146170A patent/GB1305802A/en not_active Expired
- 1970-01-21 FR FR7002112A patent/FR2028816B1/fr not_active Expired
- 1970-01-21 GB GB4408872A patent/GB1305803A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2028816B1 (enrdf_load_stackoverflow) | 1973-12-21 |
FR2028816A1 (enrdf_load_stackoverflow) | 1970-10-16 |
JPS5139058B1 (enrdf_load_stackoverflow) | 1976-10-26 |
DE2002133A1 (de) | 1970-07-23 |
GB1305802A (enrdf_load_stackoverflow) | 1973-02-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |