GB1305803A - - Google Patents

Info

Publication number
GB1305803A
GB1305803A GB4408872A GB4408870A GB1305803A GB 1305803 A GB1305803 A GB 1305803A GB 4408872 A GB4408872 A GB 4408872A GB 4408870 A GB4408870 A GB 4408870A GB 1305803 A GB1305803 A GB 1305803A
Authority
GB
United Kingdom
Prior art keywords
insulating layer
semiconductor
igfet
cis
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4408872A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1305803A publication Critical patent/GB1305803A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/66Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass
    • H10B99/16Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB4408872A 1969-01-21 1970-01-21 Expired GB1305803A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79256969A 1969-01-21 1969-01-21

Publications (1)

Publication Number Publication Date
GB1305803A true GB1305803A (enrdf_load_stackoverflow) 1973-02-07

Family

ID=25157354

Family Applications (2)

Application Number Title Priority Date Filing Date
GB146170A Expired GB1305802A (enrdf_load_stackoverflow) 1969-01-21 1970-01-21
GB4408872A Expired GB1305803A (enrdf_load_stackoverflow) 1969-01-21 1970-01-21

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB146170A Expired GB1305802A (enrdf_load_stackoverflow) 1969-01-21 1970-01-21

Country Status (4)

Country Link
JP (1) JPS5139058B1 (enrdf_load_stackoverflow)
DE (1) DE2002133A1 (enrdf_load_stackoverflow)
FR (1) FR2028816B1 (enrdf_load_stackoverflow)
GB (2) GB1305802A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805062A (en) * 1972-06-21 1974-04-16 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
JPS63123675A (ja) * 1986-11-10 1988-05-27 株式会社 小山鉄工所 ペンチ,ニツパ−などの工具用握柄

Also Published As

Publication number Publication date
FR2028816B1 (enrdf_load_stackoverflow) 1973-12-21
FR2028816A1 (enrdf_load_stackoverflow) 1970-10-16
JPS5139058B1 (enrdf_load_stackoverflow) 1976-10-26
DE2002133A1 (de) 1970-07-23
GB1305802A (enrdf_load_stackoverflow) 1973-02-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee