FR2028816A1 - - Google Patents

Info

Publication number
FR2028816A1
FR2028816A1 FR7002112A FR7002112A FR2028816A1 FR 2028816 A1 FR2028816 A1 FR 2028816A1 FR 7002112 A FR7002112 A FR 7002112A FR 7002112 A FR7002112 A FR 7002112A FR 2028816 A1 FR2028816 A1 FR 2028816A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7002112A
Other languages
French (fr)
Other versions
FR2028816B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2028816A1 publication Critical patent/FR2028816A1/fr
Application granted granted Critical
Publication of FR2028816B1 publication Critical patent/FR2028816B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/66Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass
    • H10B99/16Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7002112A 1969-01-21 1970-01-21 Expired FR2028816B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79256969A 1969-01-21 1969-01-21

Publications (2)

Publication Number Publication Date
FR2028816A1 true FR2028816A1 (enrdf_load_stackoverflow) 1970-10-16
FR2028816B1 FR2028816B1 (enrdf_load_stackoverflow) 1973-12-21

Family

ID=25157354

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7002112A Expired FR2028816B1 (enrdf_load_stackoverflow) 1969-01-21 1970-01-21

Country Status (4)

Country Link
JP (1) JPS5139058B1 (enrdf_load_stackoverflow)
DE (1) DE2002133A1 (enrdf_load_stackoverflow)
FR (1) FR2028816B1 (enrdf_load_stackoverflow)
GB (2) GB1305802A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805062A (en) * 1972-06-21 1974-04-16 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
JPS63123675A (ja) * 1986-11-10 1988-05-27 株式会社 小山鉄工所 ペンチ,ニツパ−などの工具用握柄

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU181205A1 (enrdf_load_stackoverflow) *

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU181205A1 (enrdf_load_stackoverflow) *

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE FRANCAISE "*REVUE TECHNIQUE THOMSON-CSF" VOLUME 1, MARS 1969 : "INFLUENCE DE L'ILLUMINATION SUR LES SYSTEMES METAL ISOLANT SEMICONDUCTEUR EFFET PHOTO-MIS PAGES 19-39) *

Also Published As

Publication number Publication date
FR2028816B1 (enrdf_load_stackoverflow) 1973-12-21
JPS5139058B1 (enrdf_load_stackoverflow) 1976-10-26
GB1305803A (enrdf_load_stackoverflow) 1973-02-07
DE2002133A1 (de) 1970-07-23
GB1305802A (enrdf_load_stackoverflow) 1973-02-07

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Legal Events

Date Code Title Description
ST Notification of lapse