FR2028816A1 - - Google Patents
Info
- Publication number
- FR2028816A1 FR2028816A1 FR7002112A FR7002112A FR2028816A1 FR 2028816 A1 FR2028816 A1 FR 2028816A1 FR 7002112 A FR7002112 A FR 7002112A FR 7002112 A FR7002112 A FR 7002112A FR 2028816 A1 FR2028816 A1 FR 2028816A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79256969A | 1969-01-21 | 1969-01-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2028816A1 true FR2028816A1 (enrdf_load_stackoverflow) | 1970-10-16 |
FR2028816B1 FR2028816B1 (enrdf_load_stackoverflow) | 1973-12-21 |
Family
ID=25157354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7002112A Expired FR2028816B1 (enrdf_load_stackoverflow) | 1969-01-21 | 1970-01-21 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5139058B1 (enrdf_load_stackoverflow) |
DE (1) | DE2002133A1 (enrdf_load_stackoverflow) |
FR (1) | FR2028816B1 (enrdf_load_stackoverflow) |
GB (2) | GB1305802A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3805062A (en) * | 1972-06-21 | 1974-04-16 | Gen Electric | Method and apparatus for sensing radiation and providing electrical readout |
JPS63123675A (ja) * | 1986-11-10 | 1988-05-27 | 株式会社 小山鉄工所 | ペンチ,ニツパ−などの工具用握柄 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU181205A1 (enrdf_load_stackoverflow) * |
-
1970
- 1970-01-19 DE DE19702002133 patent/DE2002133A1/de not_active Withdrawn
- 1970-01-21 JP JP534070A patent/JPS5139058B1/ja active Pending
- 1970-01-21 GB GB146170A patent/GB1305802A/en not_active Expired
- 1970-01-21 FR FR7002112A patent/FR2028816B1/fr not_active Expired
- 1970-01-21 GB GB4408872A patent/GB1305803A/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU181205A1 (enrdf_load_stackoverflow) * |
Non-Patent Citations (1)
Title |
---|
REVUE FRANCAISE "*REVUE TECHNIQUE THOMSON-CSF" VOLUME 1, MARS 1969 : "INFLUENCE DE L'ILLUMINATION SUR LES SYSTEMES METAL ISOLANT SEMICONDUCTEUR EFFET PHOTO-MIS PAGES 19-39) * |
Also Published As
Publication number | Publication date |
---|---|
FR2028816B1 (enrdf_load_stackoverflow) | 1973-12-21 |
JPS5139058B1 (enrdf_load_stackoverflow) | 1976-10-26 |
GB1305803A (enrdf_load_stackoverflow) | 1973-02-07 |
DE2002133A1 (de) | 1970-07-23 |
GB1305802A (enrdf_load_stackoverflow) | 1973-02-07 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |