GB1305802A - - Google Patents

Info

Publication number
GB1305802A
GB1305802A GB146170A GB146170A GB1305802A GB 1305802 A GB1305802 A GB 1305802A GB 146170 A GB146170 A GB 146170A GB 146170 A GB146170 A GB 146170A GB 1305802 A GB1305802 A GB 1305802A
Authority
GB
United Kingdom
Prior art keywords
capacitor
layer
capacitors
depletion region
gates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB146170A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1305802A publication Critical patent/GB1305802A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB146170A 1969-01-21 1970-01-21 Expired GB1305802A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79256969A 1969-01-21 1969-01-21

Publications (1)

Publication Number Publication Date
GB1305802A true GB1305802A (enrdf_load_stackoverflow) 1973-02-07

Family

ID=25157354

Family Applications (2)

Application Number Title Priority Date Filing Date
GB146170A Expired GB1305802A (enrdf_load_stackoverflow) 1969-01-21 1970-01-21
GB4408872A Expired GB1305803A (enrdf_load_stackoverflow) 1969-01-21 1970-01-21

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB4408872A Expired GB1305803A (enrdf_load_stackoverflow) 1969-01-21 1970-01-21

Country Status (4)

Country Link
JP (1) JPS5139058B1 (enrdf_load_stackoverflow)
DE (1) DE2002133A1 (enrdf_load_stackoverflow)
FR (1) FR2028816B1 (enrdf_load_stackoverflow)
GB (2) GB1305802A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2331093A1 (de) * 1972-06-21 1974-01-17 Gen Electric Verfahren und vorrichtung zum abtasten von strahlung und zur lieferung einer elektrischen ausgabe

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63123675A (ja) * 1986-11-10 1988-05-27 株式会社　小山鉄工所 ペンチ，ニツパ−などの工具用握柄

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2331093A1 (de) * 1972-06-21 1974-01-17 Gen Electric Verfahren und vorrichtung zum abtasten von strahlung und zur lieferung einer elektrischen ausgabe

Also Published As

Publication number Publication date
FR2028816B1 (enrdf_load_stackoverflow) 1973-12-21
FR2028816A1 (enrdf_load_stackoverflow) 1970-10-16
JPS5139058B1 (enrdf_load_stackoverflow) 1976-10-26
GB1305803A (enrdf_load_stackoverflow) 1973-02-07
DE2002133A1 (de) 1970-07-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee