DE2319644A1 - Verfahren zum herstellen eines vier zonen-halbleiterelements - Google Patents

Verfahren zum herstellen eines vier zonen-halbleiterelements

Info

Publication number
DE2319644A1
DE2319644A1 DE2319644A DE2319644A DE2319644A1 DE 2319644 A1 DE2319644 A1 DE 2319644A1 DE 2319644 A DE2319644 A DE 2319644A DE 2319644 A DE2319644 A DE 2319644A DE 2319644 A1 DE2319644 A1 DE 2319644A1
Authority
DE
Germany
Prior art keywords
layer
zone
conductivity
opening
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2319644A
Other languages
German (de)
English (en)
Inventor
Iii John Wesley Rau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of DE2319644A1 publication Critical patent/DE2319644A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thyristors (AREA)
DE2319644A 1972-04-20 1973-04-18 Verfahren zum herstellen eines vier zonen-halbleiterelements Pending DE2319644A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24605972A 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
DE2319644A1 true DE2319644A1 (de) 1973-10-25

Family

ID=22929171

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2319644A Pending DE2319644A1 (de) 1972-04-20 1973-04-18 Verfahren zum herstellen eines vier zonen-halbleiterelements

Country Status (5)

Country Link
JP (1) JPS4918581A (OSRAM)
CA (1) CA975088A (OSRAM)
DE (1) DE2319644A1 (OSRAM)
FR (1) FR2181052B1 (OSRAM)
GB (1) GB1366231A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539026A1 (de) * 1974-09-04 1976-03-25 Tokyo Shibaura Electric Co Feldeffekttransistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2488046A1 (fr) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc Dispositif de puissance a commande par transistor dmos
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539026A1 (de) * 1974-09-04 1976-03-25 Tokyo Shibaura Electric Co Feldeffekttransistor

Also Published As

Publication number Publication date
FR2181052B1 (OSRAM) 1978-05-12
CA975088A (en) 1975-09-23
FR2181052A1 (OSRAM) 1973-11-30
GB1366231A (en) 1974-09-11
JPS4918581A (OSRAM) 1974-02-19

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Legal Events

Date Code Title Description
OHJ Non-payment of the annual fee