DE2311701C3 - Höchstfrequenz-Gridistor - Google Patents
Höchstfrequenz-GridistorInfo
- Publication number
- DE2311701C3 DE2311701C3 DE2311701A DE2311701A DE2311701C3 DE 2311701 C3 DE2311701 C3 DE 2311701C3 DE 2311701 A DE2311701 A DE 2311701A DE 2311701 A DE2311701 A DE 2311701A DE 2311701 C3 DE2311701 C3 DE 2311701C3
- Authority
- DE
- Germany
- Prior art keywords
- grid
- frame
- layers
- embedded
- arrangement according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 15
- 230000002829 reductive effect Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- KRALOLGXHLZTCW-UHFFFAOYSA-L calcium;2-acetyloxybenzoate Chemical compound [Ca+2].CC(=O)OC1=CC=CC=C1C([O-])=O.CC(=O)OC1=CC=CC=C1C([O-])=O KRALOLGXHLZTCW-UHFFFAOYSA-L 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 101150087188 Mast1 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
Landscapes
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7208446A FR2174774B1 (enrdf_load_stackoverflow) | 1972-03-10 | 1972-03-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2311701A1 DE2311701A1 (de) | 1973-09-20 |
| DE2311701B2 DE2311701B2 (de) | 1974-10-17 |
| DE2311701C3 true DE2311701C3 (de) | 1975-06-12 |
Family
ID=9094998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2311701A Expired DE2311701C3 (de) | 1972-03-10 | 1973-03-09 | Höchstfrequenz-Gridistor |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2311701C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2174774B1 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4060821A (en) * | 1976-06-21 | 1977-11-29 | General Electric Co. | Field controlled thyristor with buried grid |
| JPS5846874B2 (ja) * | 1977-04-27 | 1983-10-19 | 三菱電機株式会社 | 接合型電界効果トランジスタ |
| JPS6046551B2 (ja) * | 1978-08-07 | 1985-10-16 | 株式会社日立製作所 | 半導体スイツチング素子およびその製法 |
-
1972
- 1972-03-10 FR FR7208446A patent/FR2174774B1/fr not_active Expired
-
1973
- 1973-03-09 DE DE2311701A patent/DE2311701C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2311701A1 (de) | 1973-09-20 |
| FR2174774B1 (enrdf_load_stackoverflow) | 1977-01-14 |
| FR2174774A1 (enrdf_load_stackoverflow) | 1973-10-19 |
| DE2311701B2 (de) | 1974-10-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: ZINNGREBE, H., DR.RER.NAT., PAT.-ANW., 6100 DARMSTADT |
|
| 8339 | Ceased/non-payment of the annual fee |