DE2257216A1 - Halbleiterbauelement mit einer schicht aus siliciumdioxyd - Google Patents

Halbleiterbauelement mit einer schicht aus siliciumdioxyd

Info

Publication number
DE2257216A1
DE2257216A1 DE2257216A DE2257216A DE2257216A1 DE 2257216 A1 DE2257216 A1 DE 2257216A1 DE 2257216 A DE2257216 A DE 2257216A DE 2257216 A DE2257216 A DE 2257216A DE 2257216 A1 DE2257216 A1 DE 2257216A1
Authority
DE
Germany
Prior art keywords
layer
semiconductor
semiconductor component
semiconductor substrate
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2257216A
Other languages
German (de)
English (en)
Inventor
Rudolf August Herbert Heinecke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE2257216A1 publication Critical patent/DE2257216A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE2257216A 1971-12-02 1972-11-22 Halbleiterbauelement mit einer schicht aus siliciumdioxyd Pending DE2257216A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5596071A GB1357210A (en) 1971-12-02 1971-12-02 Method of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
DE2257216A1 true DE2257216A1 (de) 1973-06-14

Family

ID=10475341

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2257216A Pending DE2257216A1 (de) 1971-12-02 1972-11-22 Halbleiterbauelement mit einer schicht aus siliciumdioxyd

Country Status (3)

Country Link
DE (1) DE2257216A1 (enExample)
FR (1) FR2162039B1 (enExample)
GB (1) GB1357210A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048350A (en) * 1975-09-19 1977-09-13 International Business Machines Corporation Semiconductor device having reduced surface leakage and methods of manufacture

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3360695A (en) * 1965-08-02 1967-12-26 Sprague Electric Co Induced region semiconductor device
US3607469A (en) * 1969-03-27 1971-09-21 Nat Semiconductor Corp Method of obtaining low concentration impurity predeposition on a semiconductive wafer

Also Published As

Publication number Publication date
GB1357210A (en) 1974-06-19
FR2162039B1 (enExample) 1976-04-23
FR2162039A1 (enExample) 1973-07-13

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