DE2253410C3 - Verfahren zur Herstellung von Rohren für Diffusionsprozesse in der Halbleitertechnik - Google Patents
Verfahren zur Herstellung von Rohren für Diffusionsprozesse in der HalbleitertechnikInfo
- Publication number
- DE2253410C3 DE2253410C3 DE19722253410 DE2253410A DE2253410C3 DE 2253410 C3 DE2253410 C3 DE 2253410C3 DE 19722253410 DE19722253410 DE 19722253410 DE 2253410 A DE2253410 A DE 2253410A DE 2253410 C3 DE2253410 C3 DE 2253410C3
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- graphite
- hollow body
- deposition
- tubes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000009792 diffusion process Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910002804 graphite Inorganic materials 0.000 claims description 16
- 239000010439 graphite Substances 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000010453 quartz Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000000926 separation method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722253410 DE2253410C3 (de) | 1972-10-31 | 1972-10-31 | Verfahren zur Herstellung von Rohren für Diffusionsprozesse in der Halbleitertechnik |
| BE128974A BE796998A (fr) | 1972-10-31 | 1973-03-19 | Procede et dispositif de fabrication de corps creux en matiere semi-conductrice utilises a des fins de diffusion |
| GB3090273A GB1396683A (en) | 1972-10-31 | 1973-06-28 | Production of elongate tubular bodies of semiconductor material |
| JP11671573A JPS5135830B2 (enrdf_load_stackoverflow) | 1972-10-31 | 1973-10-17 | |
| FR7337548A FR2204457A1 (enrdf_load_stackoverflow) | 1972-10-31 | 1973-10-22 | |
| IT3062073A IT998997B (it) | 1972-10-31 | 1973-10-26 | Procedimento per fabbricare oggetti cavi costituiti di materiale semi conduttore per scopi di diffusione |
| SU731873560D SU593646A3 (ru) | 1972-10-31 | 1973-10-30 | Способ изготовлени труб из кремни или карбида кремни и устройство дл его осуществлени |
| NL7314959A NL7314959A (enrdf_load_stackoverflow) | 1972-10-31 | 1973-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722253410 DE2253410C3 (de) | 1972-10-31 | 1972-10-31 | Verfahren zur Herstellung von Rohren für Diffusionsprozesse in der Halbleitertechnik |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2253410A1 DE2253410A1 (de) | 1974-05-02 |
| DE2253410B2 DE2253410B2 (de) | 1978-08-31 |
| DE2253410C3 true DE2253410C3 (de) | 1979-05-03 |
Family
ID=5860539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722253410 Expired DE2253410C3 (de) | 1972-10-31 | 1972-10-31 | Verfahren zur Herstellung von Rohren für Diffusionsprozesse in der Halbleitertechnik |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5135830B2 (enrdf_load_stackoverflow) |
| BE (1) | BE796998A (enrdf_load_stackoverflow) |
| DE (1) | DE2253410C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2204457A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1396683A (enrdf_load_stackoverflow) |
| IT (1) | IT998997B (enrdf_load_stackoverflow) |
| NL (1) | NL7314959A (enrdf_load_stackoverflow) |
| SU (1) | SU593646A3 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
| FR2516708A1 (fr) * | 1981-11-13 | 1983-05-20 | Comp Generale Electricite | Procede de fabrication de silicium polycristallin pour photopiles solaires |
| FR2529189B1 (fr) * | 1982-06-25 | 1985-08-09 | Comp Generale Electricite | Procede de fabrication d'une bande de silicium polycristallin pour photophiles |
| US4804633A (en) * | 1988-02-18 | 1989-02-14 | Northern Telecom Limited | Silicon-on-insulator substrates annealed in polysilicon tube |
-
1972
- 1972-10-31 DE DE19722253410 patent/DE2253410C3/de not_active Expired
-
1973
- 1973-03-19 BE BE128974A patent/BE796998A/xx unknown
- 1973-06-28 GB GB3090273A patent/GB1396683A/en not_active Expired
- 1973-10-17 JP JP11671573A patent/JPS5135830B2/ja not_active Expired
- 1973-10-22 FR FR7337548A patent/FR2204457A1/fr not_active Withdrawn
- 1973-10-26 IT IT3062073A patent/IT998997B/it active
- 1973-10-30 SU SU731873560D patent/SU593646A3/ru active
- 1973-10-31 NL NL7314959A patent/NL7314959A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2204457A1 (enrdf_load_stackoverflow) | 1974-05-24 |
| NL7314959A (enrdf_load_stackoverflow) | 1974-05-02 |
| BE796998A (fr) | 1973-07-16 |
| DE2253410A1 (de) | 1974-05-02 |
| JPS4979172A (enrdf_load_stackoverflow) | 1974-07-31 |
| JPS5135830B2 (enrdf_load_stackoverflow) | 1976-10-05 |
| DE2253410B2 (de) | 1978-08-31 |
| SU593646A3 (ru) | 1978-02-15 |
| IT998997B (it) | 1976-02-20 |
| GB1396683A (en) | 1975-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |