GB1396683A - Production of elongate tubular bodies of semiconductor material - Google Patents

Production of elongate tubular bodies of semiconductor material

Info

Publication number
GB1396683A
GB1396683A GB3090273A GB3090273A GB1396683A GB 1396683 A GB1396683 A GB 1396683A GB 3090273 A GB3090273 A GB 3090273A GB 3090273 A GB3090273 A GB 3090273A GB 1396683 A GB1396683 A GB 1396683A
Authority
GB
United Kingdom
Prior art keywords
semi
carrier
conductor
gas
carrier body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3090273A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1396683A publication Critical patent/GB1396683A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB3090273A 1972-10-31 1973-06-28 Production of elongate tubular bodies of semiconductor material Expired GB1396683A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722253410 DE2253410C3 (de) 1972-10-31 1972-10-31 Verfahren zur Herstellung von Rohren für Diffusionsprozesse in der Halbleitertechnik

Publications (1)

Publication Number Publication Date
GB1396683A true GB1396683A (en) 1975-06-04

Family

ID=5860539

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3090273A Expired GB1396683A (en) 1972-10-31 1973-06-28 Production of elongate tubular bodies of semiconductor material

Country Status (8)

Country Link
JP (1) JPS5135830B2 (enrdf_load_stackoverflow)
BE (1) BE796998A (enrdf_load_stackoverflow)
DE (1) DE2253410C3 (enrdf_load_stackoverflow)
FR (1) FR2204457A1 (enrdf_load_stackoverflow)
GB (1) GB1396683A (enrdf_load_stackoverflow)
IT (1) IT998997B (enrdf_load_stackoverflow)
NL (1) NL7314959A (enrdf_load_stackoverflow)
SU (1) SU593646A3 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478880A (en) * 1982-06-25 1984-10-23 Compagnie Generale D'electricite Method of fabricating polycrystalline silicon strips

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
FR2516708A1 (fr) * 1981-11-13 1983-05-20 Comp Generale Electricite Procede de fabrication de silicium polycristallin pour photopiles solaires
US4804633A (en) * 1988-02-18 1989-02-14 Northern Telecom Limited Silicon-on-insulator substrates annealed in polysilicon tube

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478880A (en) * 1982-06-25 1984-10-23 Compagnie Generale D'electricite Method of fabricating polycrystalline silicon strips

Also Published As

Publication number Publication date
FR2204457A1 (enrdf_load_stackoverflow) 1974-05-24
NL7314959A (enrdf_load_stackoverflow) 1974-05-02
DE2253410C3 (de) 1979-05-03
BE796998A (fr) 1973-07-16
DE2253410A1 (de) 1974-05-02
JPS4979172A (enrdf_load_stackoverflow) 1974-07-31
JPS5135830B2 (enrdf_load_stackoverflow) 1976-10-05
DE2253410B2 (de) 1978-08-31
SU593646A3 (ru) 1978-02-15
IT998997B (it) 1976-02-20

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee