FR2204457A1 - - Google Patents

Info

Publication number
FR2204457A1
FR2204457A1 FR7337548A FR7337548A FR2204457A1 FR 2204457 A1 FR2204457 A1 FR 2204457A1 FR 7337548 A FR7337548 A FR 7337548A FR 7337548 A FR7337548 A FR 7337548A FR 2204457 A1 FR2204457 A1 FR 2204457A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7337548A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2204457A1 publication Critical patent/FR2204457A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
FR7337548A 1972-10-31 1973-10-22 Withdrawn FR2204457A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722253410 DE2253410C3 (de) 1972-10-31 1972-10-31 Verfahren zur Herstellung von Rohren für Diffusionsprozesse in der Halbleitertechnik

Publications (1)

Publication Number Publication Date
FR2204457A1 true FR2204457A1 (fr) 1974-05-24

Family

ID=5860539

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7337548A Withdrawn FR2204457A1 (fr) 1972-10-31 1973-10-22

Country Status (8)

Country Link
JP (1) JPS5135830B2 (fr)
BE (1) BE796998A (fr)
DE (1) DE2253410C3 (fr)
FR (1) FR2204457A1 (fr)
GB (1) GB1396683A (fr)
IT (1) IT998997B (fr)
NL (1) NL7314959A (fr)
SU (1) SU593646A3 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2293793A1 (fr) * 1974-12-06 1976-07-02 Norton Co Accessoires d'enfournement en carbure de silicium pour fours de diffusion
FR2516708A1 (fr) * 1981-11-13 1983-05-20 Comp Generale Electricite Procede de fabrication de silicium polycristallin pour photopiles solaires
FR2529189A1 (fr) * 1982-06-25 1983-12-30 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles
EP0328817A2 (fr) * 1988-02-18 1989-08-23 Nortel Networks Corporation Procédé et appareil pour la fabrication de substrats du type SOI

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2534388C2 (ru) * 2013-01-09 2014-11-27 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Способ очистки карбид-кремниевой трубы

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2293793A1 (fr) * 1974-12-06 1976-07-02 Norton Co Accessoires d'enfournement en carbure de silicium pour fours de diffusion
FR2516708A1 (fr) * 1981-11-13 1983-05-20 Comp Generale Electricite Procede de fabrication de silicium polycristallin pour photopiles solaires
EP0079567A2 (fr) * 1981-11-13 1983-05-25 COMPAGNIE GENERALE D'ELECTRICITE Société anonyme dite: Procédé de fabrication de feuilles de silicium polycristallin pour photopiles solaires
EP0079567A3 (en) * 1981-11-13 1986-01-22 Compagnie Generale D'electricite Societe Anonyme Dite: Process for making polycrystalline silicon films for solar cells
FR2529189A1 (fr) * 1982-06-25 1983-12-30 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles
US4478880A (en) * 1982-06-25 1984-10-23 Compagnie Generale D'electricite Method of fabricating polycrystalline silicon strips
EP0328817A2 (fr) * 1988-02-18 1989-08-23 Nortel Networks Corporation Procédé et appareil pour la fabrication de substrats du type SOI
EP0328817A3 (fr) * 1988-02-18 1991-03-13 Nortel Networks Corporation Procédé et appareil pour la fabrication de substrats du type SOI

Also Published As

Publication number Publication date
DE2253410B2 (de) 1978-08-31
NL7314959A (fr) 1974-05-02
BE796998A (fr) 1973-07-16
SU593646A3 (ru) 1978-02-15
DE2253410C3 (de) 1979-05-03
IT998997B (it) 1976-02-20
GB1396683A (en) 1975-06-04
JPS4979172A (fr) 1974-07-31
JPS5135830B2 (fr) 1976-10-05
DE2253410A1 (de) 1974-05-02

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Legal Events

Date Code Title Description
ST Notification of lapse