DE2233259C3 - Verfahren zur Züchtung von Einkristalls - Google Patents
Verfahren zur Züchtung von EinkristallsInfo
- Publication number
- DE2233259C3 DE2233259C3 DE2233259A DE2233259A DE2233259C3 DE 2233259 C3 DE2233259 C3 DE 2233259C3 DE 2233259 A DE2233259 A DE 2233259A DE 2233259 A DE2233259 A DE 2233259A DE 2233259 C3 DE2233259 C3 DE 2233259C3
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- deposited
- seed
- layer
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- 229910052799 carbon Inorganic materials 0.000 claims 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims 3
- 230000000694 effects Effects 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000011780 sodium chloride Substances 0.000 claims 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000002474 experimental method Methods 0.000 claims 2
- 229920001558 organosilicon polymer Polymers 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 238000003776 cleavage reaction Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000001143 conditioned effect Effects 0.000 claims 1
- 238000010276 construction Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 238000004090 dissolution Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 230000006911 nucleation Effects 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 230000007017 scission Effects 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- WKNIDMJWLWUOMZ-UHFFFAOYSA-N [K].[Cr] Chemical compound [K].[Cr] WKNIDMJWLWUOMZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- OIDPCXKPHYRNKH-UHFFFAOYSA-J chrome alum Chemical compound [K]OS(=O)(=O)O[Cr]1OS(=O)(=O)O1 OIDPCXKPHYRNKH-UHFFFAOYSA-J 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- YGANSGVIUGARFR-UHFFFAOYSA-N dipotassium dioxosilane oxo(oxoalumanyloxy)alumane oxygen(2-) Chemical compound [O--].[K+].[K+].O=[Si]=O.O=[Al]O[Al]=O YGANSGVIUGARFR-UHFFFAOYSA-N 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229910052627 muscovite Inorganic materials 0.000 description 1
- -1 nitrogen lead sulfide Chemical compound 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1670901A SU400139A1 (ru) | 1971-07-07 | 1971-07-07 | Фонд вноертш |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2233259A1 DE2233259A1 (de) | 1973-01-25 |
| DE2233259B2 DE2233259B2 (de) | 1981-01-22 |
| DE2233259C3 true DE2233259C3 (de) | 1981-09-10 |
Family
ID=20479528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2233259A Expired DE2233259C3 (de) | 1971-07-07 | 1972-07-06 | Verfahren zur Züchtung von Einkristalls |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3853596A (OSRAM) |
| JP (1) | JPS5320474B2 (OSRAM) |
| CH (1) | CH572764A5 (OSRAM) |
| CS (1) | CS163478B1 (OSRAM) |
| DD (1) | DD98458A1 (OSRAM) |
| DE (1) | DE2233259C3 (OSRAM) |
| FR (1) | FR2144881B1 (OSRAM) |
| GB (1) | GB1393619A (OSRAM) |
| IT (1) | IT972156B (OSRAM) |
| NL (1) | NL7209445A (OSRAM) |
| SU (1) | SU400139A1 (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3976535A (en) * | 1975-05-27 | 1976-08-24 | Bell Telephone Laboratories, Incorporated | Screening seeds for quartz growth |
| FR2354810A1 (fr) * | 1976-06-14 | 1978-01-13 | Anvar | Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline |
| US4487651A (en) * | 1983-04-06 | 1984-12-11 | Duracell Inc. | Method for making irregular shaped single crystal particles and the use thereof in anodes for electrochemical cells |
| US4722763A (en) * | 1986-12-23 | 1988-02-02 | Duracell Inc. | Method for making irregular shaped single crystal particles for use in anodes for electrochemical cells |
| JP3245866B2 (ja) * | 1996-02-29 | 2002-01-15 | 住友金属工業株式会社 | 単結晶引き上げ方法及び単結晶引き上げ装置 |
| JP3209082B2 (ja) * | 1996-03-06 | 2001-09-17 | セイコーエプソン株式会社 | 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1998334A (en) * | 1931-08-13 | 1935-04-16 | Gen Electric | Electric radiation indicator |
| US2782676A (en) * | 1952-03-01 | 1957-02-26 | American Optical Corp | Reflection reduction coatings and method for coating same |
| US2895858A (en) * | 1955-06-21 | 1959-07-21 | Hughes Aircraft Co | Method of producing semiconductor crystal bodies |
| DE1259838B (de) * | 1955-08-16 | 1968-02-01 | Siemens Ag | Verfahren zum Herstellen von Halbleiterkristallen |
| NL278562A (OSRAM) * | 1961-05-19 | |||
| US3399072A (en) * | 1963-03-04 | 1968-08-27 | North American Rockwell | Magnetic materials |
| US3372069A (en) * | 1963-10-22 | 1968-03-05 | Texas Instruments Inc | Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor |
| US3574679A (en) * | 1965-01-25 | 1971-04-13 | North American Rockwell | Process for embedding or encircling polycrystalline materials in single crystal material |
| US3518636A (en) * | 1965-01-26 | 1970-06-30 | North American Rockwell | Ferrite memory device |
| US3498836A (en) * | 1966-04-25 | 1970-03-03 | Ibm | Method for obtaining single crystal ferrite films |
| US3433684A (en) * | 1966-09-13 | 1969-03-18 | North American Rockwell | Multilayer semiconductor heteroepitaxial structure |
| NL6810036A (OSRAM) * | 1967-08-16 | 1969-02-18 | ||
| DE1789064A1 (de) * | 1968-09-30 | 1971-12-30 | Siemens Ag | Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Traegerkoerpers |
-
1971
- 1971-07-07 SU SU1670901A patent/SU400139A1/ru active
-
1972
- 1972-07-05 CH CH1010272A patent/CH572764A5/xx not_active IP Right Cessation
- 1972-07-06 NL NL7209445A patent/NL7209445A/xx unknown
- 1972-07-06 IT IT26720/72A patent/IT972156B/it active
- 1972-07-06 GB GB3156872A patent/GB1393619A/en not_active Expired
- 1972-07-06 DD DD164241A patent/DD98458A1/xx unknown
- 1972-07-06 DE DE2233259A patent/DE2233259C3/de not_active Expired
- 1972-07-07 FR FR7224729A patent/FR2144881B1/fr not_active Expired
- 1972-07-07 US US00269884A patent/US3853596A/en not_active Expired - Lifetime
- 1972-07-07 CS CS4843A patent/CS163478B1/cs unknown
- 1972-07-07 JP JP6812372A patent/JPS5320474B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5320474B2 (OSRAM) | 1978-06-27 |
| FR2144881B1 (OSRAM) | 1976-08-06 |
| CS163478B1 (OSRAM) | 1975-09-15 |
| DE2233259A1 (de) | 1973-01-25 |
| NL7209445A (OSRAM) | 1973-01-09 |
| US3853596A (en) | 1974-12-10 |
| JPS4928581A (OSRAM) | 1974-03-14 |
| CH572764A5 (OSRAM) | 1976-02-27 |
| GB1393619A (en) | 1975-05-07 |
| FR2144881A1 (OSRAM) | 1973-02-16 |
| SU400139A1 (ru) | 1974-02-25 |
| IT972156B (it) | 1974-05-20 |
| DD98458A1 (OSRAM) | 1973-06-20 |
| DE2233259B2 (de) | 1981-01-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: VON FUENER, A., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN |
|
| 8339 | Ceased/non-payment of the annual fee |