IT972156B - Metodo di accrescimento di un mono cristallo su di un germe monocri stallino - Google Patents

Metodo di accrescimento di un mono cristallo su di un germe monocri stallino

Info

Publication number
IT972156B
IT972156B IT26720/72A IT2672072A IT972156B IT 972156 B IT972156 B IT 972156B IT 26720/72 A IT26720/72 A IT 26720/72A IT 2672072 A IT2672072 A IT 2672072A IT 972156 B IT972156 B IT 972156B
Authority
IT
Italy
Prior art keywords
monocri
stalline
germ
growing
mono crystal
Prior art date
Application number
IT26720/72A
Other languages
English (en)
Inventor
O Melnikov
N Triodina
A Lobachev
V Vlasov
G Bistler
Original Assignee
I Kristallograf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by I Kristallograf filed Critical I Kristallograf
Application granted granted Critical
Publication of IT972156B publication Critical patent/IT972156B/it

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • Y10S117/902Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
IT26720/72A 1971-07-07 1972-07-06 Metodo di accrescimento di un mono cristallo su di un germe monocri stallino IT972156B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1670901A SU400139A1 (ru) 1971-07-07 1971-07-07 Фонд вноертш

Publications (1)

Publication Number Publication Date
IT972156B true IT972156B (it) 1974-05-20

Family

ID=20479528

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26720/72A IT972156B (it) 1971-07-07 1972-07-06 Metodo di accrescimento di un mono cristallo su di un germe monocri stallino

Country Status (11)

Country Link
US (1) US3853596A (it)
JP (1) JPS5320474B2 (it)
CH (1) CH572764A5 (it)
CS (1) CS163478B1 (it)
DD (1) DD98458A1 (it)
DE (1) DE2233259C3 (it)
FR (1) FR2144881B1 (it)
GB (1) GB1393619A (it)
IT (1) IT972156B (it)
NL (1) NL7209445A (it)
SU (1) SU400139A1 (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976535A (en) * 1975-05-27 1976-08-24 Bell Telephone Laboratories, Incorporated Screening seeds for quartz growth
FR2354810A1 (fr) * 1976-06-14 1978-01-13 Anvar Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline
US4487651A (en) * 1983-04-06 1984-12-11 Duracell Inc. Method for making irregular shaped single crystal particles and the use thereof in anodes for electrochemical cells
US4722763A (en) * 1986-12-23 1988-02-02 Duracell Inc. Method for making irregular shaped single crystal particles for use in anodes for electrochemical cells
WO1997032059A1 (fr) * 1996-02-29 1997-09-04 Sumitomo Sitix Corporation Procede et appareil pour retirer un monocristal
JP3209082B2 (ja) * 1996-03-06 2001-09-17 セイコーエプソン株式会社 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1998334A (en) * 1931-08-13 1935-04-16 Gen Electric Electric radiation indicator
US2782676A (en) * 1952-03-01 1957-02-26 American Optical Corp Reflection reduction coatings and method for coating same
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1259838B (de) * 1955-08-16 1968-02-01 Siemens Ag Verfahren zum Herstellen von Halbleiterkristallen
NL278562A (it) * 1961-05-19
US3399072A (en) * 1963-03-04 1968-08-27 North American Rockwell Magnetic materials
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3574679A (en) * 1965-01-25 1971-04-13 North American Rockwell Process for embedding or encircling polycrystalline materials in single crystal material
US3518636A (en) * 1965-01-26 1970-06-30 North American Rockwell Ferrite memory device
US3498836A (en) * 1966-04-25 1970-03-03 Ibm Method for obtaining single crystal ferrite films
US3433684A (en) * 1966-09-13 1969-03-18 North American Rockwell Multilayer semiconductor heteroepitaxial structure
NL6810036A (it) * 1967-08-16 1969-02-18
DE1789064A1 (de) * 1968-09-30 1971-12-30 Siemens Ag Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Traegerkoerpers

Also Published As

Publication number Publication date
FR2144881B1 (it) 1976-08-06
DE2233259B2 (de) 1981-01-22
JPS5320474B2 (it) 1978-06-27
FR2144881A1 (it) 1973-02-16
CS163478B1 (it) 1975-09-15
DE2233259A1 (de) 1973-01-25
DE2233259C3 (de) 1981-09-10
SU400139A1 (ru) 1974-02-25
CH572764A5 (it) 1976-02-27
US3853596A (en) 1974-12-10
JPS4928581A (it) 1974-03-14
DD98458A1 (it) 1973-06-20
NL7209445A (it) 1973-01-09
GB1393619A (en) 1975-05-07

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