CS163478B1 - - Google Patents

Info

Publication number
CS163478B1
CS163478B1 CS4843A CS484372A CS163478B1 CS 163478 B1 CS163478 B1 CS 163478B1 CS 4843 A CS4843 A CS 4843A CS 484372 A CS484372 A CS 484372A CS 163478 B1 CS163478 B1 CS 163478B1
Authority
CS
Czechoslovakia
Application number
CS4843A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of CS163478B1 publication Critical patent/CS163478B1/cs

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
CS4843A 1971-07-07 1972-07-07 CS163478B1 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1670901A SU400139A1 (ru) 1971-07-07 1971-07-07 Фонд вноертш

Publications (1)

Publication Number Publication Date
CS163478B1 true CS163478B1 (cs) 1975-09-15

Family

ID=20479528

Family Applications (1)

Application Number Title Priority Date Filing Date
CS4843A CS163478B1 (cs) 1971-07-07 1972-07-07

Country Status (11)

Country Link
US (1) US3853596A (cs)
JP (1) JPS5320474B2 (cs)
CH (1) CH572764A5 (cs)
CS (1) CS163478B1 (cs)
DD (1) DD98458A1 (cs)
DE (1) DE2233259C3 (cs)
FR (1) FR2144881B1 (cs)
GB (1) GB1393619A (cs)
IT (1) IT972156B (cs)
NL (1) NL7209445A (cs)
SU (1) SU400139A1 (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976535A (en) * 1975-05-27 1976-08-24 Bell Telephone Laboratories, Incorporated Screening seeds for quartz growth
FR2354810A1 (fr) * 1976-06-14 1978-01-13 Anvar Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline
US4487651A (en) * 1983-04-06 1984-12-11 Duracell Inc. Method for making irregular shaped single crystal particles and the use thereof in anodes for electrochemical cells
US4722763A (en) * 1986-12-23 1988-02-02 Duracell Inc. Method for making irregular shaped single crystal particles for use in anodes for electrochemical cells
KR100293095B1 (ko) * 1996-02-29 2001-10-25 고지마 마타오 단결정향상방법과 단결정향상장치
JP3209082B2 (ja) * 1996-03-06 2001-09-17 セイコーエプソン株式会社 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1998334A (en) * 1931-08-13 1935-04-16 Gen Electric Electric radiation indicator
US2782676A (en) * 1952-03-01 1957-02-26 American Optical Corp Reflection reduction coatings and method for coating same
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1259838B (de) * 1955-08-16 1968-02-01 Siemens Ag Verfahren zum Herstellen von Halbleiterkristallen
NL278562A (cs) * 1961-05-19
US3399072A (en) * 1963-03-04 1968-08-27 North American Rockwell Magnetic materials
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3574679A (en) * 1965-01-25 1971-04-13 North American Rockwell Process for embedding or encircling polycrystalline materials in single crystal material
US3518636A (en) * 1965-01-26 1970-06-30 North American Rockwell Ferrite memory device
US3498836A (en) * 1966-04-25 1970-03-03 Ibm Method for obtaining single crystal ferrite films
US3433684A (en) * 1966-09-13 1969-03-18 North American Rockwell Multilayer semiconductor heteroepitaxial structure
NL6810036A (cs) * 1967-08-16 1969-02-18
DE1789064A1 (de) * 1968-09-30 1971-12-30 Siemens Ag Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Traegerkoerpers

Also Published As

Publication number Publication date
SU400139A1 (ru) 1974-02-25
FR2144881A1 (cs) 1973-02-16
DE2233259A1 (de) 1973-01-25
IT972156B (it) 1974-05-20
DE2233259B2 (de) 1981-01-22
FR2144881B1 (cs) 1976-08-06
JPS5320474B2 (cs) 1978-06-27
NL7209445A (cs) 1973-01-09
US3853596A (en) 1974-12-10
GB1393619A (en) 1975-05-07
DD98458A1 (cs) 1973-06-20
JPS4928581A (cs) 1974-03-14
CH572764A5 (cs) 1976-02-27
DE2233259C3 (de) 1981-09-10

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